Development of highly-functional monolithic optical integrated circuits for photonic networking

用于光子网络的高功能单片光集成电路的开发

• 批准号: 11355016
• 负责人: NAKANO Yoshiaki
• 金额: $ 12.22万
• 依托单位: University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11355016/
• 关键词: semiconductor optical Integrated circuit; selective area growth; OVPE; Mach-Zehnder interferometer; MMI coupler; optical wavelength conversion; photonic switching; 光スイッチング; MMlカプラ; AWG; MOCVD; 多モード干渉カプラ; MMI

1.Selective area growth mechanism in metal organic vapor phase epitaxy integration : Concerning the selective area MOVPE growth which forms the basis of monolithically integrated photonic circuits fabrication, we experimentally obtained selective growth thickness profiles of InP and GaAs, and extracted important parameters such as sticking probability and diffusion constants by comparing the experimental profiles with two dimensional simulation profiles. These parameters enable computer-aided design of photomasks in photonic integrated circuits (PICs) through the simulation of selective area growth.2.Mach-Zehnder optical switch circuit incorporating bulk InGaAsP/InP high-mesa waveguides : We investigated Mach-Zehnder interferometer optical switch circuits with high-mesa waveguide structure utilizing Franz-Keldysh effect in bulk InGaASP on InP substrates. We established methane-hydrogen cyclic reactive ion beam etching technique, and made fabrication of the high-mesa waveguides possible … More . Devices were then fabricated by using the etching technique and an electron beam lithography. Consequently, switching voltage as low as 3V was achieved over a wavelength range of 1.53-1.56 μm independent of polarization. The product of the phase modulation region length and the switching voltage is 1.5V mm, which is four times better than previous reports.3.Design and fabrication of integrated all-optical witch circuits se he selective re growth and multimode interference (MMI) devices : The selective area MOVPE above has been utilized to integrate semiconductor optical amplifiers, MMI couplers, and input/output waveguides on InP substrates, and thereby all-optical switch circuits were fabricated. Extinction ratio was improved in an optical switching experiment by control light.4.All-optical wavelength conversion circuit based on photo-induced refractive index change in electro-absorption (EA) optical modulators : By utilizing polarization dependence of photo-induced refractive index change in EA modulators, we demonstrated all-optical wavelength conversion with a very simple configuration consisting of an EA modulator and a polarizer.5.Study on wavelength assigned photonic switching system : We proposed "wavelength assigned photonic switching system (WAPS)" as a method of optical switching in photonic networks utilizing photonic integrated circuits, and studied its transmission characteristics as well as its applicability to IP networks. Less

1.金属有机物气相外延集成中的选择性区域生长机理：针对构成单片集成光子电路制造基础的选择性区域MOVPE生长，我们实验获得了InP和GaAs的选择性生长厚度分布，并通过将实验分布与二维模拟分布进行比较，提取了粘附概率和扩散常数等重要参数。这些参数使计算机辅助设计的光掩模在光子集成电路（PIC）通过模拟选择性区域生长。2.马赫-曾德尔光开关电路纳入体InGaAsP/InP高台面波导：我们研究了马赫-曾德尔干涉仪光开关电路与高台面波导结构利用Franz-Keldysh效应在体InGaASP在InP衬底上。建立了甲烷-氢循环反应离子束刻蚀技术，使高台面光波导的制备成为可能 ...更多信息 .然后通过使用蚀刻技术和电子束光刻来制造器件。因此，在1.53-1.56 μm波长范围内，开关电压低至3V，与偏振无关。相位调制区长度与开关电压的乘积为1.5V mm，比以前的报道提高了4倍。3.采用选择性再生长和多模干涉（MMI）器件的集成全光开关电路的设计与制作：上述选择性区域MOVPE已被用于在InP衬底上集成半导体光放大器、MMI耦合器和输入/输出波导，从而制造全光开关电路。在光开关实验中，通过控制光提高了消光比。4.基于电吸收光调制器光致折射率变化的全光波长转换电路：通过利用EA调制器中光致折射率变化的偏振依赖性，我们展示了所有-利用EA调制器和偏振器组成的简单结构实现了光波长转换. 5.波长分配光子交换的研究系统：提出了一种利用光集成电路实现光交换的方法--波长分配光交换系统（WAPS），并研究了其传输特性及其在IP网络中的应用。少

项目成果

Drew N.Maywar: "All-optical set and reset of semiconductor-optical-amplifier-based flip-flop"Technical Digest (Postdeadline Papers), 10^<th> Topical Meeting on Optical Amplifiers and their Applications (OAA'99). PDP-3. 11-14 (1999)

Drew N.Maywar：“基于半导体光放大器的触发器的全光设置和重置”技术文摘（截止日期后论文），第 10 届光放大器及其应用专题会议 (OAA99)。

Yoshiaki Nakano: "(Invited Paper) Recent advances in semiconductor photonic devices and integrated circuits"Technical Digest, 26th General Assembly of the International Union of Radio Science (URSI). D6.6. 253 (1999)

中野义明：“（特邀论文）半导体光子器件和集成电路的最新进展”技术文摘，国际无线电科学联盟（URSI）第26届大会。

Byongjin Ma: "Gain characteristics of codirectionally coupled semiconductor optical amplifier for polarity-non-inverted digital wavelength conversion"Electronics Letters. vol.35,no.18. 1560-1561 (1999)

Byongjin Ma：“用于极性非反转数字波长转换的同向耦合半导体光放大器的增益特性”电子快报。

Byongjin Ma: "Directionally-coupled semiconductor optical amplifier for all-optical digital wavelength conversion"Technical Digest, the Pacific Rim Conference on Lasers and Electro-Optics (CLEO PacRim '99). FI5. 1161-1162 (1999)

Byongjin Ma：“用于全光数字波长转换的定向耦合半导体光放大器”技术文摘，环太平洋激光和电光会议 (CLEO PacRim 99)。

Olivier Feron: "Kinetic study of P and As desorption from binary and ternary,III/V semiconductor surface by in-situ ellipsometry"Journal of Crystal Growth vol.221, Issue 1-4 (Proceedings of the Tenth International Conference on Metalorganic Vapor Phase Ep

Olivier Feron：“通过原位椭圆光度法从二元和三元、III/V 半导体表面解吸 P 和 As 的动力学研究”Journal of Crystal Growth vol.221，第 1-4 期（第十届金属有机气相国际会议论文集）