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Development of highly-functional monolithic optical integrated circuits for photonic networking

Development of highly-functional monolithic optical integrated circuits for photonic networking
用于光子网络的高功能单片光集成电路的开发
批准号:
11355016
负责人:
NAKANO Yoshiaki
金额:
$12.22万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
1999
资助国家:
日本
项目状态:
已结题
起止时间:
1999 至 2001

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中文摘要
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英文摘要
1.Selective area growth mechanism in metal organic vapor phase epitaxy integration : Concerning the selective area MOVPE growth which forms the basis of monolithically integrated photonic circuits fabrication, we experimentally obtained selective growth thickness profiles of InP and GaAs, and extracted important parameters such as sticking probability and diffusion constants by comparing the experimental profiles with two dimensional simulation profiles. These parameters enable computer-aided design of photomasks in photonic integrated circuits (PICs) through the simulation of selective area growth.2.Mach-Zehnder optical switch circuit incorporating bulk InGaAsP/InP high-mesa waveguides : We investigated Mach-Zehnder interferometer optical switch circuits with high-mesa waveguide structure utilizing Franz-Keldysh effect in bulk InGaASP on InP substrates. We established methane-hydrogen cyclic reactive ion beam etching technique, and made fabrication of the high-mesa waveguides possible … More . Devices were then fabricated by using the etching technique and an electron beam lithography. Consequently, switching voltage as low as 3V was achieved over a wavelength range of 1.53-1.56 μm independent of polarization. The product of the phase modulation region length and the switching voltage is 1.5V mm, which is four times better than previous reports.3.Design and fabrication of integrated all-optical witch circuits se he selective re growth and multimode interference (MMI) devices : The selective area MOVPE above has been utilized to integrate semiconductor optical amplifiers, MMI couplers, and input/output waveguides on InP substrates, and thereby all-optical switch circuits were fabricated. Extinction ratio was improved in an optical switching experiment by control light.4.All-optical wavelength conversion circuit based on photo-induced refractive index change in electro-absorption (EA) optical modulators : By utilizing polarization dependence of photo-induced refractive index change in EA modulators, we demonstrated all-optical wavelength conversion with a very simple configuration consisting of an EA modulator and a polarizer.5.Study on wavelength assigned photonic switching system : We proposed "wavelength assigned photonic switching system (WAPS)" as a method of optical switching in photonic networks utilizing photonic integrated circuits, and studied its transmission characteristics as well as its applicability to IP networks. Less
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Olivier Feron: "MOCVD of InGaAsP, InGaAs and InGaP over InP and GaAs substrates : distribution of composition and growth rate in a horizontal reactor"Abstracts of Third International Symposium on Control of Semiconductor Interfaces. P3-9. (1999)
Olivier Feron:“InP 和 GaAs 衬底上的 InGaAsP、InGaAs 和 InGaP 的 MOCVD:卧式反应器中成分和生长速率的分布”第三届半导体界面控制国际研讨会摘要。
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通讯作者:
Olivier Feron: "Kinetic study of P and As desorption from binary and ternary,III/V semiconductor surface by in-situ ellipsometry"Journal of Crystal Growth vol.221, Issue 1-4 (Proceedings of the Tenth International Conference on Metalorganic Vapor Phase Ep
Olivier Feron:“通过原位椭圆光度法从二元和三元、III/V 半导体表面解吸 P 和 As 的动力学研究”Journal of Crystal Growth vol.221,第 1-4 期(第十届金属有机气相国际会议论文集)
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H.J.Oh: "3-dimensional CFD simulation of InGaAsP MOCVD in a horizontal reactor"Extended Abstracts of the 20th Electronic Materials Symposium. F4. 133-134 (2001)
H.J.Oh:“卧式反应器中 InGaAsP MOCVD 的 3 维 CFD 模拟”第 20 届电子材料研讨会扩展摘要。
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