Research and development of semiconductor digital all-optical devices and integrated circuits

这项研究的目的是开发半导体数字全光器件，在光子网络中不借助电子电路对传输的光信号进行数字处理，并开发将它们单片集成在单个半导体衬底上的处理技术，从而使单芯片集成电路成为可能。1.建立了基于金属-有机气相外延的有源/无源集成技术：利用选择性区域金属-有机气相外延技术，研究了有源和无源器件的批量加工和集成技术，阐明了其工作机理，并对选择性区域生长进行了模拟，开发了计算机辅助设计软件。2.半导体数字全光器件的分析与设计：进行了…的工作分析和器件设计3.半导体数字全光器件的制作：基于上述设计，研制出了工作在1.55μm波段的InGaAsP/InP数字全光器件。集成了EA光学非线性介质和定向耦合器的光学逻辑门，集成了非线性定向耦合器和双稳态激光二极管的全光触发器，MMI双稳态激光高速全光触发器，半导体光放大器(SOA)和MZI集成的数字全光门开关，以及阵列波导光栅集成的集成增益均衡器电路。4.制作的器件的特性：详细地描述了制作的器件中的静态和动态全光操作，并展示了触发器的超高速全光开关、WDM增益均衡功能和比特格式转换。较少

The purpose of this research was to develop semiconductor digital all-optical devices which carry out the digital processing of transmitted optical signals in photonic networks without the aid of electronic circuits, as well as to develop processing technologies for integrating them on a single semiconductor substrate monolithically, thus making one chip integrated circuits possible. More specifically, the following items were investigated.1.Establishment of active/passive integration technology by metal-organic vapor phase epitaxy : Batch processing and integration techniques of active and passive devices have been studied by means of selective area metal-organic vapor phase epitaxy (MOVPE) ; its mechanism has been clarified, and simulation of the selective area growth has been made possible to result in the development of a computer-aided design software tool.2.Analysis and design of semiconductor digital all-optical devices : Analysis of operation and device design have been conduct … More ed on an optical logic gate based on integration of quantum-well electro-absorption(EA) optical nonlinear medium and a directional coupler, on an all-optical flip-flop by the integration of a non-linear directional coupler and a bistable laser diode, and on a high-speed all-optical flip-flop utilizing two mode switching in an active multimode interference(MMI) couper or a Mach-Zehnder interferometer(MZI).3.Fabrication of semiconductor digital all-optical devices : Based on the design above, InGaAsP/InP digital all-optical devices operating at 1.55μm wavelength band have been fabricated, namely, the optical logic gate incorporating EA optical nonlinear medium and a directional coupler, the all-optical flip-flop integrating a nonlinear directional coupler and a bistable laser diode, the MMI bistable laser high-speed all-optical flip-flop, a digital all-optical gate switch by semiconductor optical amplifier(SOA) and MZI integration, and an integrated gain equalizer circuit with arrayed waveguide gratings.4.Characterization of the fabricated devices : Static and dynamic all-optical operations in the fabricated devices have been characterized in detail, and then ultrafast all-optical switching, WDM gain-equalizing function, and bit-format conversion by the flip-flop have been demonstrated. Less