Research and development of semiconductor digital all-optical devices and integrated circuits
半导体数字全光器件及集成电路的研发
基本信息
- 批准号:14205055
- 负责人:
- 金额:$ 26.54万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (A)
- 财政年份:2002
- 资助国家:日本
- 起止时间:2002 至 2004
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The purpose of this research was to develop semiconductor digital all-optical devices which carry out the digital processing of transmitted optical signals in photonic networks without the aid of electronic circuits, as well as to develop processing technologies for integrating them on a single semiconductor substrate monolithically, thus making one chip integrated circuits possible. More specifically, the following items were investigated.1.Establishment of active/passive integration technology by metal-organic vapor phase epitaxy : Batch processing and integration techniques of active and passive devices have been studied by means of selective area metal-organic vapor phase epitaxy (MOVPE) ; its mechanism has been clarified, and simulation of the selective area growth has been made possible to result in the development of a computer-aided design software tool.2.Analysis and design of semiconductor digital all-optical devices : Analysis of operation and device design have been conduct … More ed on an optical logic gate based on integration of quantum-well electro-absorption(EA) optical nonlinear medium and a directional coupler, on an all-optical flip-flop by the integration of a non-linear directional coupler and a bistable laser diode, and on a high-speed all-optical flip-flop utilizing two mode switching in an active multimode interference(MMI) couper or a Mach-Zehnder interferometer(MZI).3.Fabrication of semiconductor digital all-optical devices : Based on the design above, InGaAsP/InP digital all-optical devices operating at 1.55μm wavelength band have been fabricated, namely, the optical logic gate incorporating EA optical nonlinear medium and a directional coupler, the all-optical flip-flop integrating a nonlinear directional coupler and a bistable laser diode, the MMI bistable laser high-speed all-optical flip-flop, a digital all-optical gate switch by semiconductor optical amplifier(SOA) and MZI integration, and an integrated gain equalizer circuit with arrayed waveguide gratings.4.Characterization of the fabricated devices : Static and dynamic all-optical operations in the fabricated devices have been characterized in detail, and then ultrafast all-optical switching, WDM gain-equalizing function, and bit-format conversion by the flip-flop have been demonstrated. Less
本研究的目的是开发半导体数字全光器件,该器件可以在没有电子电路的帮助下对光子网络中传输的光信号进行数字处理,以及开发将它们单片集成在单个半导体衬底上的处理技术,从而使单芯片集成电路成为可能。1.金属有机物气相外延(MOVPE)有源/无源集成技术的建立:采用选择区域金属有机物气相外延(MOVPE)技术,研究了有源和无源器件的批量加工和集成技术;其机制已经澄清,并且选择性区域生长的模拟已经成为可能,从而导致计算机的发展-半导体数字全光器件的分析与设计:进行了器件的工作分析和器件设计 ...更多信息 艾德在基于量子阱电吸收(EA)光学非线性介质和定向耦合器集成的光学逻辑门上,在非线性定向耦合器和半导体激光二极管集成的全光触发器上,以及在有源多模干涉(MMI)耦合器或马赫-曾德尔干涉仪(MZI)中利用双模切换的高速全光触发器.3.半导体数字全光器件制作:在此基础上,研制了工作在1.55μm波段的InGaAsP/InP数字全光器件,即采用EA光学非线性介质和定向耦合器的光逻辑门,该全光触发器集成了非线性定向耦合器和半导体激光二极管,MMI半导体激光器高速全光触发器,半导体光放大器(SOA)和MZI集成的数字全光门开关,4.器件的表征:对器件的静态和动态全光工作特性进行了详细的表征,并对器件的超快全光开关、WDM增益均衡功能以及触发器的位格式转换功能进行了演示。少
项目成果
期刊论文数量(218)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
(Invited Paper) Modeling of all-optical flip-flop bistable laser diodes using the finite-difference beam-propagation method
(特邀论文)利用有限差分光束传播法对全光触发器双稳态激光二极管进行建模
- DOI:
- 发表时间:2005
- 期刊:
- 影响因子:0
- 作者:Foo Cheong Yit;Hiromasa Shimizu;Mitsuru Takenaka;Foo Cheong Yit;Mitsuru Takenaka
- 通讯作者:Mitsuru Takenaka
InP系アレイ導波路合分波器の試作とMOVPE選択成長による能動素子集積化の検討
InP 阵列波导复用器/解复用器的原型制造以及通过 MOVPE 选择性生长进行有源元件集成的研究
- DOI:
- 发表时间:2005
- 期刊:
- 影响因子:0
- 作者:Mitsuru Takenaka;Maura Raburn;Yoshiaki Nakano;櫻井謙司
- 通讯作者:櫻井謙司
GaInAsP/InP directional coupler loaded with grating for optically-controlled switching
装有光栅的 GaInAsP/InP 定向耦合器,用于光控开关
- DOI:
- 发表时间:2002
- 期刊:
- 影响因子:0
- 作者:Seok-Hwan Jeong;Tetsuya Mizumoto;Mitsuru Takenaka;Yoshiaki Nakano;Katsumi Nakatsuhara
- 通讯作者:Katsumi Nakatsuhara
(解説)高密度光集積回路へ向けた金属光配線技術
(解说)高密度光集成电路的金属光互连技术
- DOI:
- 发表时间:2002
- 期刊:
- 影响因子:0
- 作者:Seok-Hwan Jeong;Tetsuya Mizumoto;Mitsuru Takenaka;Yoshiaki Nakano;Katsumi Nakatsuhara;片桐祥雅
- 通讯作者:片桐祥雅
Semiconductor lasers and applications
半导体激光器及其应用
- DOI:
- 发表时间:2002
- 期刊:
- 影响因子:0
- 作者:Yoshiaki Nakano;他 編著
- 通讯作者:他 編著
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NAKANO Yoshiaki其他文献
Development of A Simplified Shaking Table Test Method Using Ultra-Small Scale HPFRCC Models Part VI Hysteresis Loop Control of Ultra-Small Scale HPFRCC Models
使用超小型 HPFRCC 模型开发简化振动台测试方法第六部分超小型 HPFRCC 模型的磁滞回线控制
- DOI:
- 发表时间:
2005 - 期刊:
- 影响因子:0
- 作者:
TOKUI Noriko;SAKAI Yuki;SANADA Yasushi;TAKAHASHI Noriyuki;NAKANO Yoshiaki - 通讯作者:
NAKANO Yoshiaki
NAKANO Yoshiaki的其他文献
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{{ truncateString('NAKANO Yoshiaki', 18)}}的其他基金
Comprehensive Research for Quantification of Tsunami Load and Improvement of Tsunami Resistanse of Building Structures
海啸荷载量化及提高建筑结构抗海啸能力的综合研究
- 批准号:
24246093 - 财政年份:2012
- 资助金额:
$ 26.54万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
A Practical Study on Post-earthquake Damage Evaluation of RC Buildings with URM wall considering Out-of-plane Failure and Beam Deformation
考虑面外破坏和梁变形的URM墙RC建筑震后损伤评估实用研究
- 批准号:
21360262 - 财政年份:2009
- 资助金额:
$ 26.54万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Digital Photonics -Paradigm Shift in Optoelectronics
数字光子学 - 光电子学范式转变
- 批准号:
20226008 - 财政年份:2008
- 资助金额:
$ 26.54万 - 项目类别:
Grant-in-Aid for Scientific Research (S)
An Experimental Study on Residual Seismic Capacity Evaluation and Earthquake Disaster Recovery for RC Buildings with Unreinforced Masonry Infill
无筋砌体填充RC建筑剩余抗震能力评价及地震灾后恢复试验研究
- 批准号:
18360258 - 财政年份:2006
- 资助金额:
$ 26.54万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Development of all-optical packet processing monolithic integrated circuits consisting of digital photonic devices
由数字光子器件组成的全光包处理单片集成电路的开发
- 批准号:
17206035 - 财政年份:2005
- 资助金额:
$ 26.54万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
A Study of Educational Environment Infrastructure applied of Local Positioning System using Active type RFID
有源型RFID本地定位系统在教育环境基础设施中的应用研究
- 批准号:
17500665 - 财政年份:2005
- 资助金额:
$ 26.54万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Estimation and Evaluation of Torsional Earthquake Response of Asymmetric Buildings
非对称建筑物扭转地震响应的估算与评价
- 批准号:
15360292 - 财政年份:2003
- 资助金额:
$ 26.54万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Novel wavelength division multiplexed optical functional devices based on semiconductor lasers
基于半导体激光器的新型波分复用光功能器件
- 批准号:
12450139 - 财政年份:2000
- 资助金额:
$ 26.54万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Development of highly-functional monolithic optical integrated circuits for photonic networking
用于光子网络的高功能单片光集成电路的开发
- 批准号:
11355016 - 财政年份:1999
- 资助金额:
$ 26.54万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Selective-area metal-organic vapor phase epitaxy for monolithically-integrated semiconductor photonic circuits
用于单片集成半导体光子电路的选择性区域金属有机气相外延
- 批准号:
09450007 - 财政年份:1997
- 资助金额:
$ 26.54万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
相似国自然基金
Si基N极性Ga(Al)N薄膜MOVPE生长的极性控制及表面动力学过程研究
- 批准号:62004049
- 批准年份:2020
- 资助金额:24.0 万元
- 项目类别:青年科学基金项目
InN基窄带隙半导体材料的加压MOVPE生长与物性研究
- 批准号:61106003
- 批准年份:2011
- 资助金额:30.0 万元
- 项目类别:青年科学基金项目
MOVPE长波长InAs/GaAs量子点及其激光器件的研究
- 批准号:60476009
- 批准年份:2004
- 资助金额:23.0 万元
- 项目类别:面上项目
锑化镓及其固溶体的MOVPE热力学分析与生长
- 批准号:69376008
- 批准年份:1993
- 资助金额:6.5 万元
- 项目类别:面上项目
相似海外基金
Study on deep ultraviolet LEDs with the wavelength of 220nm by Jet gas stream MOVPE
喷射气流MOVPE研究波长220nm深紫外LED
- 批准号:
22H01973 - 财政年份:2022
- 资助金额:
$ 26.54万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Low dislocation AlN growth by super high temperature MOVPE in jet engine model
喷气发动机模型中超高温 MOVPE 低位错 AlN 生长
- 批准号:
20K21006 - 财政年份:2020
- 资助金额:
$ 26.54万 - 项目类别:
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MOVPE growth of Sb-containing alloys for strategic short-wave and mid-wave infrared applications
用于短波和中波红外战略应用的含锑合金的 MOVPE 生长
- 批准号:
2429309 - 财政年份:2020
- 资助金额:
$ 26.54万 - 项目类别:
Studentship
In-situ characterization of MOVPE growth dynamics and of diffusion mechanisms in nitrides and their influence on optoelectronic properties of InGaN/AlGaN/GaN quantum structures
MOVPE 生长动力学和氮化物扩散机制的原位表征及其对 InGaN/AlGaN/GaN 量子结构光电性能的影响
- 批准号:
426532685 - 财政年份:2019
- 资助金额:
$ 26.54万 - 项目类别:
Research Grants
An realistic improvement of reactor design to enhance ammonia decomposition rate for high quality high In content InGaN MOVPE growth
对反应器设计进行实际改进,以提高氨分解速率,实现高质量高 In 含量 InGaN MOVPE 生长
- 批准号:
16K06260 - 财政年份:2016
- 资助金额:
$ 26.54万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Diodes based on MBE and MOVPE oxide thin films
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- 批准号:
266999219 - 财政年份:2014
- 资助金额:
$ 26.54万 - 项目类别:
Research Grants
MRI: Acquisition of Metal Organic Vapor Phase Epitaxy (MOVPE) Reactor for Nanostructured Materials Development
MRI:采购用于纳米结构材料开发的金属有机气相外延 (MOVPE) 反应器
- 批准号:
1337592 - 财政年份:2013
- 资助金额:
$ 26.54万 - 项目类别:
Standard Grant
加工Si基板上への非極性面GaNの選択MOVPE成長に関する研究
加工硅衬底上选择性MOVPE生长非极性面GaN的研究
- 批准号:
10J08362 - 财政年份:2010
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$ 26.54万 - 项目类别:
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Growth of high-quality thick InGaN by raised-pressure MOVPE
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22246004 - 财政年份:2010
- 资助金额:
$ 26.54万 - 项目类别:
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- 批准号:
10F00059 - 财政年份:2010
- 资助金额:
$ 26.54万 - 项目类别:
Grant-in-Aid for JSPS Fellows