Research and development of semiconductor digital all-optical devices and integrated circuits

本研究的目的是开发半导体数字全光器件，该器件可以在没有电子电路的帮助下对光子网络中传输的光信号进行数字处理，以及开发将它们单片集成在单个半导体衬底上的处理技术，从而使单芯片集成电路成为可能。1.金属有机物气相外延（MOVPE）有源/无源集成技术的建立：采用选择区域金属有机物气相外延（MOVPE）技术，研究了有源和无源器件的批量加工和集成技术;其机制已经澄清，并且选择性区域生长的模拟已经成为可能，从而导致计算机的发展-半导体数字全光器件的分析与设计：进行了器件的工作分析和器件设计 关于我们 艾德在基于量子阱电吸收（EA）光学非线性介质和定向耦合器集成的光学逻辑门上，在非线性定向耦合器和半导体激光二极管集成的全光触发器上，以及在有源多模干涉（MMI）耦合器或马赫-曾德尔干涉仪（MZI）中利用双模切换的高速全光触发器.3.半导体数字全光器件制作：在此基础上，研制了工作在1.55μm波段的InGaAsP/InP数字全光器件，即采用EA光学非线性介质和定向耦合器的光逻辑门，该全光触发器集成了非线性定向耦合器和半导体激光二极管，MMI半导体激光器高速全光触发器，半导体光放大器（SOA）和MZI集成的数字全光门开关，4.器件的表征：对器件的静态和动态全光工作特性进行了详细的表征，并对器件的超快全光开关、WDM增益均衡功能以及触发器的位格式转换功能进行了演示。少

The purpose of this research was to develop semiconductor digital all-optical devices which carry out the digital processing of transmitted optical signals in photonic networks without the aid of electronic circuits, as well as to develop processing technologies for integrating them on a single semiconductor substrate monolithically, thus making one chip integrated circuits possible. More specifically, the following items were investigated.1.Establishment of active/passive integration technology by metal-organic vapor phase epitaxy : Batch processing and integration techniques of active and passive devices have been studied by means of selective area metal-organic vapor phase epitaxy (MOVPE) ; its mechanism has been clarified, and simulation of the selective area growth has been made possible to result in the development of a computer-aided design software tool.2.Analysis and design of semiconductor digital all-optical devices : Analysis of operation and device design have been conduct … More ed on an optical logic gate based on integration of quantum-well electro-absorption(EA) optical nonlinear medium and a directional coupler, on an all-optical flip-flop by the integration of a non-linear directional coupler and a bistable laser diode, and on a high-speed all-optical flip-flop utilizing two mode switching in an active multimode interference(MMI) couper or a Mach-Zehnder interferometer(MZI).3.Fabrication of semiconductor digital all-optical devices : Based on the design above, InGaAsP/InP digital all-optical devices operating at 1.55μm wavelength band have been fabricated, namely, the optical logic gate incorporating EA optical nonlinear medium and a directional coupler, the all-optical flip-flop integrating a nonlinear directional coupler and a bistable laser diode, the MMI bistable laser high-speed all-optical flip-flop, a digital all-optical gate switch by semiconductor optical amplifier(SOA) and MZI integration, and an integrated gain equalizer circuit with arrayed waveguide gratings.4.Characterization of the fabricated devices : Static and dynamic all-optical operations in the fabricated devices have been characterized in detail, and then ultrafast all-optical switching, WDM gain-equalizing function, and bit-format conversion by the flip-flop have been demonstrated. Less