Laser Doping Process for wide-bandgap compound semiconductors

宽带隙化合物半导体激光掺杂工艺

• 批准号: 12450145
• 负责人: AOKI Toru
• 金额: $ 8.13万
• 依托单位: Shizuoka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12450145/
• 关键词: Heavily Doping; Non-equilibrium reaction; Excimer laser; Wide bandgap semicondutors; II-VI compound semiconductors; Low temperature processing; CdTe; ZnO; 不純物ドーピング; 非熱平衡

Laser doping processing technique has been investigated for wide-bandgap compound semiconductors. Specially, the method has been researched for II-VI compound semiconductors such as CdTe, ZnO, ZnTe which are difficult for heavily doping because these have self-compensation effects, and it is difficult to apply conventional method for silicon such as thermal diffusion and ion implantation since the II-VI crystals are not so hard. The laser doping process is low temperature processing technique. The process have has only simple two steps, i) a dopant source was deposited on sample surface, and ii) an excimer laser pulse (20nS) was irradiated on its surface under the high-pressure ambient. In this technique, it was found that the laser beam intensity was strongly effect for doping conditions. The uniform doping in large area have became possible by laser beam homoginizer system, which installed by this Gran-in-Aid, and it was clearly understand laser intensity dependences. Then, we could obtain heavily doped and this technique could be applied to made opto-electorical device. In CdTe samples, integrated gamma-ray imaging device could be fabricated by laser pattern-doping and laser abrasion processing, and high hole concentration of 10^<19> cm^<-3> was obtained in p-type ZnO.

研究了宽带隙化合物半导体的激光掺杂工艺。特别地，该方法已被研究用于II-VI族化合物半导体，如CdTe、ZnO、ZnTe，这些化合物半导体由于具有自补偿效应而难以重掺杂，并且由于II-VI族晶体不是那么硬，因此难以应用常规的方法用于硅，如热扩散和离子注入。激光掺杂工艺是低温处理技术。该方法只有简单的两个步骤，i）在样品表面上沉积掺杂剂源，ii）在高压环境下在其表面上照射准分子激光脉冲（20 nS）。在该技术中，发现激光束强度受掺杂条件的强烈影响。通过安装激光束均匀化系统，可以实现大面积的均匀掺杂，并且可以清楚地了解激光强度的依赖性。然后，我们可以得到重掺杂，这种技术可以应用于制作光电器件。在CdTe样品中，通过激光图案化掺杂和激光研磨加工可以制备出集成的γ射线成像器件，并且在p型ZnO中获得了10^ cm-3的高空穴浓度<19><-3>。

项目成果

A.Miyake et al.: "Growth of Epitaxial ZnO Thin Film by Oxidation of Epitaxial ZnS Film on Si(111) Subatrate"Jpn. J. Appl. Phys. 39. L1186-L1187 (2000)

A.Miyake等：“通过在Si(111)基板上氧化外延ZnS薄膜来生长外延ZnO薄膜”Jpn。

M. Niraula et. al.: "A new fabrication technique of CdTe strip detectors for gamma-ray imagin and spectroscopy"Phys. Stat. Sol. (b). 229. 1103-1107 (2001)

M.Niraula 等。

D.Noda,T.Aoki,Y.Nakanishi,Y.Hatanaka: "Epitaxial growth of CdSeTe films by remote plasma enhanced metal organic chemical vapor deposition"Vacuum. 59. 701-707 (2000)

D.Noda，T.Aoki，Y.Nakanishi，Y.Hatanaka：“通过远程等离子体增强金属有机化学气相沉积外延生长 CdSeTe 薄膜”真空。

A.Miyake,H.Kominami,T.Aoki,H.Tatsuoka,H.Kuwabara,Y.Nkanishi,Y.Hatanaka: "Growth of ZnO epitaxial thin films showing exciton emission on Si substrate"Proc.of 5th Joint International Conference on Advanced Science and Technology. 226-229 (2000)

A.Miyake,H.Kominami,T.Aoki,H.Tatsuoka,H.Kuwabara,Y.Nkanishi,Y.Hatanaka:“Growth of ZnO epitogenic Thinfilms Show Exciton Emission on Si Substrate”第五届联合国际会议论文集

T.Aoki,A.Nakamura,D.C.Look,Y.Hatanaka: "Fabrication of a ZnO LED by Excimer Laser Doping Technique"Proc.of The 10th International Workshop on Inorganic and Organic Electroluminescence. 141-144 (2000)

T.Aoki、A.Nakamura、D.C.Look、Y.Hatanaka：“准分子激光掺杂技术制造 ZnO LED”第十届国际无机和有机电致发光研讨会论文集。