Study on suppression of fluctuation in semiconductor electrical characteristics by single ion inplantaticn

单离子植入抑制半导体电特性波动的研究

• 批准号: 12555092
• 负责人: ODOMARI Iwao
• 金额: $ 8.64万
• 依托单位: Waseda University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12555092/
• 关键词: Single ion inplantation; Semicondjctor; Nano devices; Carfacn nano tube; Focused ion bean; Liquid metal ion source; Impurity control; Catalysis control; 不純物位置制御; 触媒位置制御; 集束イオンビーム; 不純物ゆらぎ; 同時ドーピング; ELTRAN; ドーパント原子配列; 極微半導体; ナノテクノロジー; ドーパント

In order to develop potentialities of single ion implantation through die precise control of solid-state physical and chemical properties in nano-scale semiconductors by one-by-one implantation of dopant atoms, we demonstrated the control of the electrical characteristics in ultrafine semiconductor devices and the selective growth of carbon nanotubes/fibers at catalytic ion-implanted site as follows.Control of electrical properties in ultrafine semiconductor devicesThe influence of dopant atom position on V_<th> in silicon wire MOSFETs was experimentally investigated for the first time by means of SIX. P single-ions were implanted into n-type channel region at intervals of 100nm. V_<th> was evaluated and compared with that of conventional FETs in which the dopant atoms were randomly introduced. Our results indicate that V_<th> fluctuation of FETs with ordered dopant distribution was smaller than that of FETs with random channel doping. It was also found that the average value of V_<th> … More of FETs with the ordered dopants was much lower than that of FETs with the random distribution of dopants, even though the dopant number was exactly same for both FETs. This indicates that it is important to control the dopant position for the precise control of V_<th>.Position control of carbon nanotubes/fibersThe precise control of individual CNFs position on substrate is essential for opening up novel device applications. We attempted to control the growth position of CNFs by means of focused Ni ion implantation and the subsequent plasma chemical vapor deposition (CVD). Ni ions were implanted at 30kV into n-type Si(100) substrate through the thermally grown oxide film. After a removal of thermal oxide, an antenna edge 2450MHz microwave plasma assistant CVD was carried out at 600℃ for 10 min with pure hydrogen and methane over 99.9999% for the CNF growth. The selective growth of CNFs on Ni-implanted sites was observed. It was confirmed for the first time that the implanted Ni ions act as a catalyst for the synthesis of CNFs. Less

为了通过逐个注入掺杂原子来精确控制纳米半导体的固态物理化学性质，开发单离子注入的潜力，我们对超细半导体器件的电学特性进行了控制，并在催化离子注入点处选择性生长了碳纳米管/纤维。超细半导体器件的电学性能的控制首次用六种方法实验研究了掺杂原子位置对硅线MOSFET中VTh的影响。将P单离子以100 nm的间隔注入n型沟道区。V<th>，并与随机引入掺杂原子的常规FET进行了比较。结果表明，有序掺杂的场效应管的V<th>波动小于无规则沟道掺杂的场效应管。研究还发现，V<th>…的平均值尽管两种FET的掺杂剂数目完全相同，但更多的有序掺杂的FET比掺杂随机分布的FET要低得多。这表明控制掺杂位置对于精确控制碳纳米管/纤维的位置是非常重要的。精确控制碳纳米管/纤维在衬底上的单个碳纳米管的位置对于开拓新的器件应用是至关重要的。我们尝试通过聚焦镍离子注入和随后的等离子体化学气相沉积(CVD)来控制碳纳米管的生长位置。通过热生长的氧化膜，在30KV下将Ni离子注入n型Si(100)衬底。去除热氧化物后，在天线边缘2450 MHz微波等离子体辅助化学气相沉积条件下，氢气和甲烷的质量分数均大于99.9999%，在600℃的条件下生长CNF。观察到碳纳米纤维在镍离子注入部位的选择性生长。首次证实了注入的镍离子对碳纳米纤维的合成起到了催化作用。较少

项目成果

Koh M, Goto T, Sugita A, Tanii T, Iida, T, Shinada T, Matsukawa T, Ohdomari I: "Novel process for high-density buried nanopyramid array fabrication by means of dopant ion implantation and wet etching"JJAP. 40巻4B号. 2837-2839 (2001)

Koh M、Goto T、Sugita A、Tanii T、Iida、T、Shinada T、Matsukawa T、Ohdomari I：“通过掺杂离子注入和湿法蚀刻制造高密度掩埋纳米金字塔阵列的新工艺”JJAP 40 卷。第 4B 号。2837-2839 (2001)

Watanabe T, Tatsumura K, Kajimoto A, Inaba Y, Ogura K, Ohdomari I: "Initial Oxidation Process of Si(001) Simulated by Using a Parallel PC System"SEMICONDUCTORTECHNOLOGY 1. 242-246 (2001)

Watanabe T、Tatsumura K、Kajimoto A、Inaba Y、Ogura K、Ohdomari I：“使用并行 PC 系统模拟 Si(001) 的初始氧化过程”SEMICONDUCTORTECHNOLOGY 1. 242-246 (2001)

T.Shinada: "Improvement of Focused Ion-Beam Optics in Single-Ion Implantation for Higher Aiming Precision of One-by-One Doping of Impurity Atoms into Nano-Scale Semiconductor Devices"Jpn.J.Appl.Phys.Part 2. 41・3A. L287-L290 (2002)

T. Shinada：“改进单离子注入中的聚焦离子束光学器件，以提高纳米级半导体器件中杂质原子逐一掺杂的瞄准精度”Jpn.J.Appl.Phys.Part 2. 41・3A。L287-L290（2002）

大泊巌: "第2版応用物理ハンドブック"丸善株式会社. 151 (2002)

大泊岩生：《应用物理手册第 2 版》丸善株式会社 151 (2002)

T. Tanii, T. Goto, T. lida, M. Koh-Masahara and L Ohdomari: "Sinp|le fabrication of silicon nanopyramids for high performance field emitter array"Ext. Abst. SSDM. 578-579 (2001)

T. Tanii、T. Goto、T. lita、M. Koh-Masahara 和 L Ohdomari：“用于高性能场发射体阵列的硅纳米金字塔的简单制造”Ext。