High-tenperature SIM observation under ion irradiation in order to modify surfaces in namscale
离子辐照下的高温 SIM 观察,以纳米尺度修饰表面
基本信息
- 批准号:11450019
- 负责人:
- 金额:$ 9.22万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B)
- 财政年份:1999
- 资助国家:日本
- 起止时间:1999 至 2001
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
1. A high-tenperature low-energy ion-gun/scanning-tunneling-microscope (STM) conbined system has been developed in order to clarify the microscopic aspects of annealing processes of ion-irradiated Si surfaces. This system enables us to perform atom-resolved high tenperature STM observation and ion beam irradiation simultaneously in ultrahigh vacuum conditions. Taking great advantage of this system, we have successfully obtained sequential STM images of high-temperature Si (111) surfaces irradiated with Ar' single ions. The STM results have shown that the surface defects induced by single ion irradiation show various changes in size and shape, which is considered to result from diffusion of vacancies and interstitial atoms in the substrates, diffusion of atoms on the surface, and from an anisotropic character of the surface atonic arrangement. And we succeed in real-time STM observation under 0^+ ion irradiation. Next target is dopant ion irradiation process.2. We have to simulate collision cascade inbulk and following annealing, because STM tipobserves surface information only. First principle calculation, molecular dynamics, Monte-Carlo simulation is applied to investigate the phenomenon we observed.
1.研制了一套高温低能离子枪/扫描隧道显微镜(STM)联合系统,用于研究离子辐照硅表面退火过程的微观结构。该系统使我们能够在超高真空条件下同时进行原子分辨高温扫描隧道显微镜观测和离子束辐照。利用该系统,我们成功地获得了Ar‘单离子辐照高温Si(111)表面的连续STM图像。STM结果表明,单离子辐照引起的表面缺陷在大小和形状上都有不同程度的变化,这被认为是由于空位和间隙原子在衬底中的扩散,原子在表面的扩散,以及表面非调性排列的各向异性所致。并成功地实现了0^+离子辐照下的STM实时观测。下一个目标是掺杂离子辐照工艺。由于STM只提供表面信息,所以我们必须在整体和随后的退火层中模拟碰撞级联。首先采用原理计算、分子动力学、蒙特卡罗模拟等方法对我们观察到的现象进行了研究。
项目成果
期刊论文数量(202)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Tanii T, Goto T, Iida, T, Koh-Masahara M, Ohdomari I: "Fabrication of adenosine triphosphate-molecule recognition chip by means of bioluminous enzyme luciferase"JJAP. Lett.. 40巻10B号. L1135-L1137 (2001)
Tanii T、Goto T、Iida、T、Koh-Masahara M、Ohdomari I:“利用生物发光酶荧光素酶制备腺苷三磷酸分子识别芯片”JJAP。第 40 卷,第 10B 期。 )
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
M.Koh: "Simple nanostructuring of Si surfaces by means of focused beam patterning and wet etching"Applied Surface Science. 162-163. 599-603 (2000)
M.Koh:“通过聚焦光束图案化和湿法蚀刻对硅表面进行简单的纳米结构”应用表面科学。
- DOI:
- 发表时间:
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- 影响因子:0
- 作者:
- 通讯作者:
T.Tanii: "Nucleation and growth of Cu clusters on highly oriented pyrolytic graphite observed with an in situ electrochemical scanning tunneling microscope"Applied Surface Science. 162-163. 662-665 (2000)
T.Tanii:“用原位电化学扫描隧道显微镜观察到高度定向热解石墨上铜簇的成核和生长”应用表面科学。
- DOI:
- 发表时间:
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- 影响因子:0
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- 通讯作者:
M. Koh,: "Quantitative characterization of ion-induced Si0_2/Si interface traps by means of MeV He sinle-ion irradiation"Journal of Applied Physics. 85. 7814-7818 (1999)
M. Koh,:“通过 MeV He 单离子辐照对离子诱导的 SiO_2/Si 界面陷阱进行定量表征”应用物理学杂志。
- DOI:
- 发表时间:
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- 影响因子:0
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- 通讯作者:
T.Watanabe: "The Physics and Chemistry of SiO_2 and the Si-SiO_2 Interface"H.Z.Massoud, I.J.R.Baumvol, M.Hirose and E.H.Poindexter. 12 (2000)
T.Watanabe:“SiO_2 和 Si-SiO_2 界面的物理和化学”H.Z.Massoud、I.J.R.Baumvol、M.Hirose 和 E.H.Poindexter。
- DOI:
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- 影响因子:0
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ODOMARI Iwao其他文献
ODOMARI Iwao的其他文献
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{{ truncateString('ODOMARI Iwao', 18)}}的其他基金
Novel semiconductors with controlled both single-atom number and position
单原子数量和位置受控的新型半导体
- 批准号:
17201026 - 财政年份:2005
- 资助金额:
$ 9.22万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Study on suppression of fluctuation in semiconductor electrical characteristics by single ion inplantaticn
单离子植入抑制半导体电特性波动的研究
- 批准号:
12555092 - 财政年份:2000
- 资助金额:
$ 9.22万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
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