Development of GaAs Molecular Layar Epitaxy with Doping in Low Temperature Process

低温掺杂GaAs分子层外延技术的研究进展

• 批准号: 13450016
• 负责人: KURABAYASHI Toru
• 金额: $ 9.28万
• 依托单位: Semiconductor Research Foundation Semiconductor Research Institute
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13450016/
• 关键词: GaAs; Molecular Layar Growth; Atomic Layer Growth; Self limiting Growth; Impurity Doping; Surface Chemical Reaction; 自己停止機構; 反応機構

Self-limiting growth of GaAs with doping by molecular layer epitaxy (MLE) has been studied using the intermittent, supply of TEG, AsH_3, and a dopant precursor, Te(CH_3)_2 (diethyl-tellurium : DETe) or Se(CH_3)_2 (diethyl-selenium : DESe) for n-type growth on GaAs (001). The self-limiting monolayer growth is applicable at the temperature of 265℃, however, the growth rate per cycle of doping decreased with increasing DETe pressure and saturated at about 0.4 monolayer with a saturation of the carrier concentration at 1.1-1.4 x 10^<19>cm^<-3>. The carrier concentration was strongly influenced by the surface-terminating species, and the growth rate reduction in the TEG-AsH_3 system is due to the electrical characteristics of the growing surface.This new method has been applied successfully for the fabrication of ideal static induction transistor as ballistic-tunneling device, which has the channel length about 8 nm, shorter than the mean free path of the electron.

利用分子层外延技术（MLE）研究了掺杂GaAs的自限性生长，采用间歇式供应三甘醇AsH 3和掺杂剂前体Te（CH 3）2（二乙基碲：DETe）或Se（CH 3）2（二乙基硒：DESe）在GaAs（001）上进行n型生长。自限性单层生长在265℃下是适用的，然而，每个掺杂周期的生长速率随着DETe压力的增加而降低，并且在大约0.4个单层处饱和，载流子浓度的饱和在1.1-1.4 × 10 - <19>4 cm-3<-3>。在TEG-AsH_3体系中，载流子浓度受表面终止物种的强烈影响，生长速率的降低是由于生长表面的电学特性，这种新方法已成功地用于制备理想的静电感应晶体管弹道隧穿器件，其沟道长度约为8 nm，小于电子的平均自由程。

项目成果

T.Kurabayashi, J.Nishizawa: "Atomic Layer Epitaxy, Encyclopedia of Materials Science and Technology"Elsevier Science Ltd.. 371-383 (2001)

T.Kurabayashi、J.Nishizawa：“原子层外延，材料科学与技术百科全书”Elsevier Science Ltd.. 371-383 (2001)

T.Kurabayashi, K.Kono, H.Kikuchi, J.Nishizawa, M.Esashi: "Self-Limiting Growth of GaAs Molecular Layer Epitaxy Using Triethyl-gallium(TEG) and AsH_3"Journal of Crystal Growth. 229. 152-157 (2001)

T.Kurabayashi、K.Kono、H.Kikuchi、J.Nishizawa、M.Esashi：“使用三乙基镓 (TEG) 和 AsH_3 进行 GaAs 分子层外延的自限生长”晶体生长杂志。

T.Kurabayashi, H.Kikuchi, T.Hamano, J.Nishizawa: "Doping Method for GaAs Molecular Layer Epitaxy by Adsorption Control of Impurity Precursor"J.Crystal Growth. 229. 147-151 (2001)

T.Kurabayashi、H.Kikuchi、T.Hamano、J.Nishizawa：“通过杂质前体的吸附控制实现 GaAs 分子层外延的掺杂方法”J.晶体生长。

J.Nishizawa, T.Kurabayashi, P.Plotka, H.Kikuchi, T.Hamano: "Self-Limiting Growth of GaAs with doping by Molecular Layer Epitaxy Using Triethyl-gallium and AsH_3"J.Crystal Growth. 244. 236-242 (2002)

J.Nishizawa、T.Kurabayashi、P.Plotka、H.Kikuchi、T.Hamano：“使用三乙基镓和 AsH_3 通过分子层外延掺杂实现 GaAs 的自限生长”J.晶体生长。

J.Nishizawa, T.Kurabayashi: "Development of GaAs Epitaxy -from bulk growth to ultra-thin film growth for nano-structure devices"8^<th> Russian Conference "Gallium Arsenide and III-V Group Related Compounds" GaAs-2002, 1-4 October 2002. 9-11 (2002)

J.Nishizawa、T.Kurabayashi：“砷化镓外延的发展 - 从体生长到纳米结构器件的超薄膜生长”第 8 届俄罗斯会议“砷化镓和 III-V 族相关化合物” GaAs-2002