Development of GaAs Molecular Layar Epitaxy with Doping in Low Temperature Process

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Self-limiting growth of GaAs with doping by molecular layer epitaxy (MLE) has been studied using the intermittent, supply of TEG, AsH_3, and a dopant precursor, Te(CH_3)_2 (diethyl-tellurium : DETe) or Se(CH_3)_2 (diethyl-selenium : DESe) for n-type growth on GaAs (001). The self-limiting monolayer growth is applicable at the temperature of 265℃, however, the growth rate per cycle of doping decreased with increasing DETe pressure and saturated at about 0.4 monolayer with a saturation of the carrier concentration at 1.1-1.4 x 10^<19>cm^<-3>. The carrier concentration was strongly influenced by the surface-terminating species, and the growth rate reduction in the TEG-AsH_3 system is due to the electrical characteristics of the growing surface.This new method has been applied successfully for the fabrication of ideal static induction transistor as ballistic-tunneling device, which has the channel length about 8 nm, shorter than the mean free path of the electron.