Micro flow systems for semiconductor monolayr growth process
Micro flow systems for semiconductor monolayr growth process
批准号:
07650002
负责人:
KURABAYASHI Toru
金额:
$1.34万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1995
资助国家:
日本
项目状态:
已结题
起止时间:
1995 至 1996
中文摘要
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英文摘要
Bakable micro flow system with microvalve was fabricated using silicon micromachining. This microvalve uses the pneumatic actuators having corrugated diaphragms to get a large displacement of the valve plunger for large flow rate. The corrugated diaphragm has a large deflection compared to a flat diaphragm. The deflection of the diaphragm was measured by the displacement of the microscope which was focused on the diaphragm surface. The expermental results of the deflection agree approximately with the simulated results.Au-Si eutectic bonding is important for the microvalve fabrication process. We investigated Au-Si eutectic bonding and measured the bonding strength at different Au thickness.The microvalve is anodically bonded to the Kovar alloy block after the Au-Si eutectic bonding. At the beginning the microvalve was designed by using the electrostatic force and the pneumatic force. However, the electro static force control was difficult, we used the pneumatic actuators. The bakable silicon microvalve has been developed by using silicon micromachining technology, the gas flow rate could be controlled from 0.1 sccm to 35 sccm, at 25-120゚C,and the valve had a small leakage of about 0.08 sccm. The microvalve is expected to be applied for advanced semiconductor device fabrication processes.
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J. Nishizawa:“TMG/AsH_3 比例对 GaAs 分子层生长的影响”J. Vacuum Science
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通讯作者:
西澤 潤一: "GaAsの単分子層成長" 応用物理学会「半導体結晶シンポジウム」予稿隼. 9-12 (1995)
Junichi Nishizawa:“GaAs 的单层生长”日本应用物理学会“半导体晶体研讨会”论文集,Hayabusa 9-12(1995)。
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D.Y.Sim: "Pneumatic Microvalve Based on Si Micromachining" T.IEE Japan. 116-E. 56-61 (1996)
D.Y.Sim:“基于硅微加工的气动微型阀”T.IEE 日本。
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C.Cabuz: "Microphysical Investigations on Mechanical Structures Realized in P^+ Silice" J.Microelectromechanical Systems. 4. 109-118 (1995)
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C.Cabuz: "A New Theory on Stress Evolution in P^+ Silicon" 8th Int. Solid State Sensors and Actuators. 67-68 (1995)
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