DEVELOPMENT OF NOVEL THIN FILM VARISTORS BY CHEMICAL SOLUTION DEPOSITION

化学溶液沉积法开发新型薄膜压敏电阻

• 批准号: 13450270
• 负责人: HIRANO Shin-ichi
• 金额: $ 0.83万
• 依托单位: NAGOYA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13450270/
• 关键词: Varistor; SrTiO_3; Chemical Solution Deposition; LaNiO_3; Stacked Structure; バリスタ特性; 積層構造膜; 金属-有機化合物前駆体

This work focused on the low temperature processing of novel thin film varistors by chemical solution deposition method. Fabrication of SrTiO_3/Nb:SrTiO_3/SrTiO_3 layered films with insulator/semiconductor/insulator structure could successfully synthesized by considering the starting materials, chemical additives, and heating procedures. The typical non-linear V-I character was successfully observed for the prepared thin film varistors. ESCA analysis revealed that the interlayer diffusion of the metal elements such as La, Ni, Nb was negligiblly small even after heat treatment at 700℃. Non-linear coefficient and varistor voltage for the thin film with 500 nm thickness were confirmed to be 4.5 and 38kV/cm^<-1>, respectively. The orientation of perovskite LaNiO_3 electrode films on the substrate found to be controlled by the concentration of precursor solutions. These results can be applied for processing and development of the novel varistor integrated with IC system.

本工作主要研究了化学溶液沉积法制备新型薄膜压敏电阻器的低温工艺。通过考虑原料、化学添加剂和加热工艺，可以成功地制备具有绝缘体/半导体/绝缘体结构的SrTiO_3/Nb：SrTiO_3/SrTiO_3多层膜。所制备的薄膜压敏电阻器具有典型的非线性伏安特性。ESCA分析表明，即使在700℃热处理后，La、Ni、Nb等金属元素的层间扩散也很小。厚度为500 nm的薄膜的非线性系数和压敏电压分别为4.5和38 kV/cm-2<-1>。发现钙钛矿型LaNiO_3电极薄膜在衬底上的取向受前驱体溶液浓度的控制。研究结果可为新型压敏电阻集成电路的研制提供参考。

项目成果

K. Ueno, W. Sakamoto, T. Yogo, S. Hirano: "Synthesis of Conductive LaNiO_3 Thin Films by Chemical Solution Deposition"Japanese Journal of Applied Physics. 40・10. 6049-6054 (2001)

K. Ueno、W. Sakamoto、T. Yogo、S. Hirano：“化学溶液沉积法合成导电 LaNiO_3 薄膜”日本应用物理学杂志 40・10 6049-6054 (2001)。

K. Ueno, W. Sakamoto, T. Yogo, S. Hirano: "Synthesis of Conductive LaNiO_3 Thin Films through Chemical Solution Deposition of Metal-Organics"Ceramic Transactions. 112. 305-310 (2001)

K. Ueno、W. Sakamoto、T. Yogo、S. Hirano：“通过金属有机物化学溶液沉积合成导电 LaNiO_3 薄膜”《陶瓷交易》。

K.Ueno, W.Sakamoto, T.Yogo, S.Hirano: "Processing of Movel Strontium Titanate-Based Thin-Film Varistors by Chemical Solution Deposition"J. Am. Ceram. Soc.. 86[1]. 99-104 (2003)

K.Ueno、W.Sakamoto、T.Yogo、S.Hirano：“化学溶液沉积法加工Movel钛酸锶基薄膜压敏电阻”J。

K.Ueno, W.Sakamoto, T.Yogo, S.Hirano: "Synthesis of Conductive LaNiO3 Thin Films by Chemical Solution Deposition"Japanese Journal of Applied Physics. 40(10). 6049-6054 (2001)

K.Ueno、W.Sakamoto、T.Yogo、S.Hirano：“化学溶液沉积法合成导电 LaNiO3 薄膜”日本应用物理学杂志。

W.Sakamoto, M.Mizuno, Y.Horie, T.Yogo, S.Hirano: "Chemical Solution Processing and Characterization of Highly Oriented (Ba, Ln) Nb206 [Ln : La, Gd, Dy] Thin Films"Jpn, J. Appl. Phys.. 41[1]. 6647-6652 (2002)

W.Sakamoto、M.Mizuno、Y.Horie、T.Yogo、S.Hirano：“高度取向 (Ba, Ln) Nb206 [Ln : La, Gd, Dy] 薄膜的化学溶液处理和表征”Jpn, J