SYNTHESIS OF CUBIC GaN SINGLE CRSYTALS BY THE K FLUX METHOD

K通量法合成立方GaN单晶

• 批准号: 13450355
• 负责人: YAMANE Hisanori
• 金额: $ 8.77万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13450355/
• 关键词: Gallium nitride; zinc-blende-type structure; Flux method; K melt; Cathodoluminescence; Crystal growth; Solution growth; Crystal morphology; 金属ナトリウム融液; 立方晶閃亜鉛鉱型; 反応容器; 立方晶窒化ガリウム; 金属カリウム融液法

Gallium nitride, having the hexagonal wurtzite-type structure (h-GaN), has attracted an interest as a material for blue-light emitting diodes and short-wavelength laser diodes. GaN has a polymorph of the cubic zinc-blende-type structure (c-GaN), hut the detail properties on the c-GaN have not been clarified due to the lack at bulk c-GaN single crystals.In the present study, granular and platelet GaN crystals were prepared at 700℃ for 24 h and 7 MPa of N_2 by using a K flux. The platelet crystals of h-GaN with a size of about 1 mm were obtained at the vapor-liquid interface. The granular crystals with a size of 50 μm were characterized as a mixture of c-GaN and h-GaN. Rietveld analysis revealed that granular crystals contain 40% of c-GaN. The granular crystals of 30 μm containing 95% of c-GaN were obtained at 600℃,24 h and 7 MPa of N_2. The size of the granular crystals of 70% c-GaN, prepared at 700℃, 24 h and 4 MPa of N_2 was about 60 μm. The formation of c-GaN increased with decreasin … More g temperature and N_2 pressure.The granular crystals having the maximum size of 200 μm was obtained at 700℃, 96 h and 4 MPa of N_2. A colorless transparent c-GaN crystal with a size of 80 μm was picked up in the sample synthesized at 650℃,96 h and 4 MPa of N_2. Square facets of (100) phase and steps of equilateral triangle shape of (111) phase, reflecting the threefold-axis symmetry of cubic structure, were observed. A peak from near band-edge emission of c-GaN at 3.209eV observed in the cathodoluminescence spectrum of the c-GaN crystal was consistent with the results reported for c-GaN thin films. The half-value width of the peek was 76 meV.Granular and platelet GaN crystals were also synthesized by using a K-Na flux. However, the ratio of c-GaN is the granular or plates prepared with the K-Na flux was smaller than that prepared with the K flux. No crystal was obtained from K-Ga melt in a W crucible at 650 -680℃ and 4 -7 MPa of N_2. Granular crystals with a size of 40 μm were obtained from partial melt of K-Ga intermetallic compounds at 610 -630℃. Less

具有六方纤锌矿结构(h-GaN)的氮化镓作为蓝光发光二极管和短波长激光二极管的材料引起了人们的兴趣。GaN具有立方闪锌矿结构(c-GaN)的多晶型结构，但由于缺乏块体c-GaN单晶，c-GaN的具体性质尚不清楚。在本研究中，采用K助熔剂在700℃和7 Mpa的氮气中生长了颗粒状和片状GaN晶体。在气液界面上得到了尺寸约为1 mm的h-GaN片状晶体。颗粒晶体的大小为50μm，为c-GaN和h-GaN的混合物。Rietveld分析表明，颗粒晶体中含有40%的c-GaN。在600μ、24 h和7 Mpa的N_2气氛下，获得了含有95%c-GaN的30℃m颗粒晶体。在700℃、24 h和4 Mpa的N_2气氛中，70%的c-GaN颗粒晶体的尺寸约为60μm，c-GaN的形成随…的降低而增加在较高的g温度和较高的氮气压力下，当氮气压力为4μ、96 h和70 0℃时，可获得最大尺寸为2 0 0μm的颗粒状晶体；在6 5 0℃、96 h和4 Mpa的氮气气氛下合成的样品中观察到尺寸为80μm的无色透明c-GaN晶体，观察到(10 0)相的方面和(111)相的正三角形台阶，反映了立方结构的三轴对称性。在c-GaN晶体的阴极发光光谱中观察到c-GaN在3.209 eV处的近带边发射峰，这与报道的c-GaN薄膜的结果一致。PEEK的半峰宽度为76 meV，用K-Na助熔剂合成了颗粒状和片状GaN晶体。然而，用K-Na助熔剂制备的c-GaN比用K-Na助熔剂制备的颗粒状或片状c-GaN的比例要小。K-Ga金属间化合物在610-630℃的部分熔化过程中，K-Ga金属间化合物在610-630μ的部分熔化过程中，未得到晶体。较少

项目成果

M.Aoki: "Dissolution and Recrystallization of GaN in Molten Na"Japanese Journal of Applied Physics. 42. 7272-7275 (2003)

M.Aoki：“GaN 在熔融 Na 中的溶解和再结晶”日本应用物理学杂志。

山根久典: "GaN単結晶の育成"金属. 73. 1060-1064 (2003)

Hisanori Yamane：“GaN 单晶的生长”金属 73. 1060-1064 (2003)。

M.Aoki, H.Yamane, M.Shimada, S.Sarayama, H.Iwata, F.J.Disalvo: "Dissolution and Recrystallization of GaN in Molten Na"Jpn.J.Appl.Phys.. 42. 7272-7275 (2003)

M.Aoki、H.Yamane、M.Shimada、S.Sarayama、H.Iwata、F.J.Disalvo：“GaN 在熔融 Na 中的溶解和再结晶”Jpn.J.Appl.Phys.. 42. 7272-7275 (2003)

山根久典: "フラックス法によるGaN単結晶の育成"応用物理. 71. 548-551 (2002)

Hisanori Yamane：“通过熔剂法生长 GaN 单晶”应用物理 71. 548-551 (2002)。

T.Sekiguchi, H.Yamane, M.Aoki, T.Araki, M.Shimada: "Cathodoluminescence Study of h-and c-GaN Single Crystals Grown by a Na or K Flux"Science and Technology of Advanced Materials. 3. 91-94 (2002)

T.Sekiguchi、H.Yamane、M.Aoki、T.Araki、M.Shimada：“Na 或 K 助熔剂生长的 h-和 c-GaN 单晶的阴极发光研究”先进材料科学与技术。