Low temperature growth of GaN single crystals using a Na metal flux

使用Na金属助熔剂低温生长GaN单晶

• 批准号: 09555274
• 负责人: YAMANE Hisanori
• 金额: $ 8.77万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09555274/
• 关键词: gallium nitride; single crystals; flux growth; crystal growth; crystal structure; X-ray diffraction; cathodoluminescence; sodium melt; 極性; 表面形態; X線異常分散; ナトリウムフラックス; 窒化ガリウム単結晶; ナトリウムアジ化物

Wurtzite-type hexagonal GaN single crystals were obtained at 650 - 840℃ for 72 - 300 h in a sealed stainless-steel tube container, using Ga, NaNィイD23ィエD2 and Na as starting materials. GaN formation finished within 24 h at 840℃. In the samples heated at lower temperatures for 24 h, Ga-Na intermetallic compound, GaィイD239ィエD2NaィイD222ィエD2, covered with a GaN layer, precipitated at the bottom of the stainless-steel tube. Longer reaction time was needed to accomplish the nitridation of Ga at these conditions.The GaN single crystals were deposited in the region of 2 cm from the bottom of the stainless-steel tube container. The GaN single crystals grown in the upper half part of the region were platelet with amber color or colorless. The maximum size of the crystals is about 2 mm. They grew perpendicular to the tube wall. In the lower part, the crystals were dark yellow and pyramidal or prismatic, having a size of 0.4 - 0.7 mm. The pressure of NィイD22ィエD2 in the sealed stainless-steel tube container decreased during the formation of GaN. The morphology change suggested that the NィイD22ィエD2 pressure approached an equilibrium partial pressure of NィイD22ィエD2 for GaN formation.Electron microprobe analysis did not detect any impurity elements in the crystals. The near band-edge emission of GaN was observed at 363 mm by cathodoluminescence spectroscopy. The colorless transparent platelet single crystals prepared at 650℃ for 300 h exhibited the sharpest peak with strongest intensity. This revealed that the crystals with a good quality grew at lower temperature and at a slow growth rate.

使用GA，NANII D23I D2和Na作为起始材料，在密封的不锈钢管容器中以650-840℃获得72-300 h，在72-300 h处获得72-300 h，在72-300 h处获得Wurtzite型六角形GAN单晶。 GAN组在840 h时在24小时内完成。在较低温度加热24小时的样品中，GA-NA金属间化合物GAN D239I D2NA D2NA D222I D2，覆盖有GAN层，保存在不锈钢管的底部。在这些条件下，需要更长的反应时间来完成GA的硝化。GAN单晶被沉积在距不锈钢管容器底部2 cm的区域中。该地区上半部分生长的GAN单晶是血小板，琥珀色或无色。晶体的最大尺寸约为2 mm。它们垂直于管壁生长。在下部，晶体为深黄色，金字塔或棱柱形，大小为0.4-0.7 mm。在GAN形成过程中，密封的不锈钢管容器中NYI D22的压力降低。形态的变化表明，NYI D22按接近NYI D22的同等压力，用于GAN形成。电子微探针分析未检测到晶体中的任何杂质元素。通过阴极光谱，在363毫米处观察到GAN的接近带缘发射。无色透明的血小板单晶体在650℃制备300小时以强度强的峰值暴露了最鲜明的峰。这表明在较低温度和缓慢生长速度下具有良好质量生长的晶体。

项目成果

Hisanori Yamane: "Na Flux Growth and Characterization of GaN Single Crystals" Proc.Int.Symp.Nitdes II. (in press). (1998)

Hisanori Yamane：“GaN 单晶的 Na 通量生长和表征”Proc.Int.Symp.Nitdes II。

H. Yamane, M. Shimada and F. J. DiSalo: "Na flux growth and characterization of GaN single crystals"Mater. Sci. Forum. 325-326. 21-24 (2000)

H. Yamane、M. Shimada 和 F. J. DiSalo：“Na 通量生长和 GaN 单晶的表征”材料。

Hisanori Yamane: "Preparation of GaN Single Crystals. Using a Na Flax" Chemistry of Materials. 9,[2]. 413-416 (1997)

Hisanori Yamane：“GaN 单晶的制备。使用 Na Flax”材料化学。

Hisanori Yamane: "Morphology and Characterization of GaN Single Crystals Grown in a Na Flux"J. Crystal Growth. 186. 8-12 (1998)

Hisanori Yamane：“在 Na 助熔剂中生长的 GaN 单晶的形态和表征”J。

Hisanori Yamane: "Polarity of GaN Single Crystals Prepared with a Na Flux" Jpn.J.Appl.Phys.37. 3436-3440 (1998)

Hisanori Yamane：“用Na助熔剂制备的GaN单晶的极性”Jpn.J.Appl.Phys.37。