Low temperature growth of GaN single crystals using a Na metal flux

使用Na金属助熔剂低温生长GaN单晶

• 批准号: 09555274
• 负责人: YAMANE Hisanori
• 金额: $ 8.77万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09555274/
• 关键词: gallium nitride; single crystals; flux growth; crystal growth; crystal structure; X-ray diffraction; cathodoluminescence; sodium melt; 極性; 表面形態; X線異常分散; ナトリウムフラックス; 窒化ガリウム単結晶; ナトリウムアジ化物

Wurtzite-type hexagonal GaN single crystals were obtained at 650 - 840℃ for 72 - 300 h in a sealed stainless-steel tube container, using Ga, NaNィイD23ィエD2 and Na as starting materials. GaN formation finished within 24 h at 840℃. In the samples heated at lower temperatures for 24 h, Ga-Na intermetallic compound, GaィイD239ィエD2NaィイD222ィエD2, covered with a GaN layer, precipitated at the bottom of the stainless-steel tube. Longer reaction time was needed to accomplish the nitridation of Ga at these conditions.The GaN single crystals were deposited in the region of 2 cm from the bottom of the stainless-steel tube container. The GaN single crystals grown in the upper half part of the region were platelet with amber color or colorless. The maximum size of the crystals is about 2 mm. They grew perpendicular to the tube wall. In the lower part, the crystals were dark yellow and pyramidal or prismatic, having a size of 0.4 - 0.7 mm. The pressure of NィイD22ィエD2 in the sealed stainless-steel tube container decreased during the formation of GaN. The morphology change suggested that the NィイD22ィエD2 pressure approached an equilibrium partial pressure of NィイD22ィエD2 for GaN formation.Electron microprobe analysis did not detect any impurity elements in the crystals. The near band-edge emission of GaN was observed at 363 mm by cathodoluminescence spectroscopy. The colorless transparent platelet single crystals prepared at 650℃ for 300 h exhibited the sharpest peak with strongest intensity. This revealed that the crystals with a good quality grew at lower temperature and at a slow growth rate.

以Ga、NaN、D23、D2和Na为原料，在650 ~ 840℃，72 ~ 300 h，在密封不锈钢管容器中获得了纤锌矿型六方GaN单晶。在840℃下，GaN在24 h内完成了生长。在较低温度下加热24 h的样品中，Ga-Na金属间化合物，Ga_（239）Ga_（239）D_2Na_（222）Ga_（239）D_2Na_（222）D_2，被GaN层覆盖，在不锈钢管的底部沉淀。在此条件下完成Ga的氮化需要较长的反应时间。GaN单晶沉积在离不锈钢管容器底部2cm的区域内。在该区域的上半部分生长的GaN单晶为琥珀色或无色的片状。晶体的最大尺寸约为2 mm，它们垂直于管壁生长。在下部，晶体为深黄色和金字塔形或棱柱形，具有0.4 - 0.7 mm的尺寸。在形成GaN的过程中，密封的不锈钢管容器中的N_xD 22_xD 2的压力降低。形貌的变化表明，N_xD_（22）N_通过阴极发光光谱在363 mm处观察到GaN的近带边发射。在650℃保温300 h制备的无色透明片状单晶峰最尖，强度最强。这表明，具有良好质量的晶体生长在较低的温度和缓慢的生长速度。

项目成果

Hisanori Yamane: "Na Flux Growth and Characterization of GaN Single Crystals" Proc.Int.Symp.Nitdes II. (in press). (1998)

Hisanori Yamane：“GaN 单晶的 Na 通量生长和表征”Proc.Int.Symp.Nitdes II。

H. Yamane, M. Shimada and F. J. DiSalo: "Na flux growth and characterization of GaN single crystals"Mater. Sci. Forum. 325-326. 21-24 (2000)

H. Yamane、M. Shimada 和 F. J. DiSalo：“Na 通量生长和 GaN 单晶的表征”材料。

Hisanori Yamane: "Morphology and Characterization of GaN Single Crystals Grown in a Na Flux"J. Crystal Growth. 186. 8-12 (1998)

Hisanori Yamane：“在 Na 助熔剂中生长的 GaN 单晶的形态和表征”J。

Hisanori Yamane: "Preparation of GaN Single Crystals. Using a Na Flax" Chemistry of Materials. 9,[2]. 413-416 (1997)

Hisanori Yamane：“GaN 单晶的制备。使用 Na Flax”材料化学。

Hisanori Yamane: "Polarity of GaN Single Crystals Prepared with a Na Flux" Jpn.J.Appl.Phys.37. 3436-3440 (1998)

Hisanori Yamane：“用Na助熔剂制备的GaN单晶的极性”Jpn.J.Appl.Phys.37。