Optical device application of nano-structured electrochromic indium nitride films

(1)采用射频反应离子镀法制备InN薄膜。在10-4 Pa下的沉积离子室中抽气后，将高纯度的N2气体引入到0.1 1 Pa。通过射频天线对氮气气体施加100w射频功率，产生氮气辉光放电。然后从氧化铝坩埚中蒸发金属铟。衬底支架与铟蒸气通量的夹角设为85度。(2)通过改变衬底支架的平面内旋转条件，可以将薄膜的纳米结构控制为柱状、锯齿状和螺旋状纳米棒。在0.3 Pa以下，薄膜的结晶度和化学成分几乎是恒定的。(3)采用双光束分光光度计对其电化学性能进行了观察。比较了三种纳米结构的电致发光性能，发现电致发光的增强顺序依次为锯齿形、螺旋形和柱状。锯齿形膜的颜色变化量是正常沉积的2.5倍。颜色变化的速度与纳米结构无关，比正常沉积的薄膜快2倍左右。

(1) The InN films were prepared by using an rf reactive ion plating method. After evacuation of a deposit ion chamber under 10-4 Pa, high-purity N2 gas was introduced upto 0.1 1 Pa. A 100 W rf power was applied into the N2 gas through an rf antenna to generate a nitrogen glow discharge. Then indium metal were evaporated from an alumina crucible. The angle of a substrate holder against the indium vapor flux was set at 85 degree.(2) By means of varying the in-plane rotation condition of the substrate holder, the nanostructure of the films can be controlled into columnar, zig-zag and helical nanorods. The crystallinity and chemical composition of the films are almost constant upto 0.3 Pa.(3) The EC properties were observed by using a double-beam optical spectrophotometer. Comparing the EC properties for the three types of nano-structured InN, we found that the order of the EC enhancement as zig-zag, helical and columnar. The zig-zag film showed 2.5 times larger color change quantity than that of the normally-deposited InN film. The speed of color change was independent of the nano-structure, around 2 times faster than the normally-deposited film.