Optical device application of nano-structured electrochromic indium nitride films

纳米结构电致变色氮化铟薄膜的光学器件应用

• 批准号: 13555166
• 负责人: INOUE Yasushi
• 金额: $ 8.13万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13555166/
• 关键词: indium nitride; electrochromic; surface nanostructure; light-controlling material; display device; reactive ion plating; surface adsorption; chemical bonding states; 化学結合状態

(1) The InN films were prepared by using an rf reactive ion plating method. After evacuation of a deposit ion chamber under 10-4 Pa, high-purity N2 gas was introduced upto 0.1 1 Pa. A 100 W rf power was applied into the N2 gas through an rf antenna to generate a nitrogen glow discharge. Then indium metal were evaporated from an alumina crucible. The angle of a substrate holder against the indium vapor flux was set at 85 degree.(2) By means of varying the in-plane rotation condition of the substrate holder, the nanostructure of the films can be controlled into columnar, zig-zag and helical nanorods. The crystallinity and chemical composition of the films are almost constant upto 0.3 Pa.(3) The EC properties were observed by using a double-beam optical spectrophotometer. Comparing the EC properties for the three types of nano-structured InN, we found that the order of the EC enhancement as zig-zag, helical and columnar. The zig-zag film showed 2.5 times larger color change quantity than that of the normally-deposited InN film. The speed of color change was independent of the nano-structure, around 2 times faster than the normally-deposited film.

(1)采用射频反应离子镀方法制备了InN薄膜。在10~(-4)Pa以下的沉积离子室内抽真空后，高纯度的N_2气体被引入，最高可达0.1~1Pa。通过射频天线向氮气中施加100W的射频功率，产生氮气辉光放电。然后，从氧化铝坩埚中蒸发金属铟。通过改变衬底托架的面内旋转条件，可以将薄膜的纳米结构控制为柱状、锯齿状和螺旋状纳米棒。薄膜的结晶度和化学成分几乎不变，最高可达0.3Pa.(3)用双光束分光光度计观察了薄膜的电致发光性能。比较了三种纳米结构InN的电导率，发现电导率的增强顺序为：锯齿形、螺旋形和柱状。Z字形薄膜的变色量是正常沉积的InN薄膜的2.5倍。变色的速度与纳米结构无关，比正常沉积的薄膜快2倍左右。

项目成果

Atsushi Yamaguchi, Takuya Fujihara, Yasushi Inoue, Osamu Takai: "Synthesis of InN Nanocolumnar Structure by Oblique Ion Plating"IUMRS-ICAM. A4-8. 40-40 (2003)

Atsushi Yamaguchi、Takuy​​a Fujihara、Yasushi Inoue、Osamu Takai：“通过斜离子镀合成 InN 纳米柱结构”IUMRS-ICAM。

A.Yamaguchi, T.Fujihara, Y.Inoue, O.Takai: "ENHANCEMENT OF ELECTROCHROMIC PROPERTY OF INDIUM NITRIDE FILMS BY INTRODUCING BIOMIMETIC MICROSTRUCTURE"Abst. Third Int. Symp. Biomimetic Materials Processing. 1. 39-39 (2003)

A.Yamaguchi、T.Fujihara、Y.Inoue、O.Takai：“通过引入仿生微结构增强氮化铟薄膜的电致变色性能”摘要。

Athushi Yamaguchi, Takuya Fujihara, Yasushi Inoue, Osamu Takai: "Synthesis of InN Nanocolumnar Structure by Oblique Ion Plating"IUMRS-ICAM. A4-8. 40-40 (2003)

Athushi Yamaguchi、Takuy​​a Fujihara、Yasushi Inoue、Osamu Takai：“通过斜离子镀合成 InN 纳米柱结构”IUMRS-ICAM。

A.Yamaguchi, T.Fujihara, K.Hasegawa, Y.Inoue, O.Takai: "ELECTROCHROMIC PROPERTIES OF BIOMIMETIC NANOSTRUCTURED InN FILMS"Abst.4th Int.Symp.Biomimetic Materials Processing. 1. 30-30 (2004)

A.Yamaguchi、T.Fujihara、K.Hasekawa、Y.Inoue、O.Takai：“仿生纳米结构 InN 薄膜的电致变色特性”Abst.4th Int.Symp.仿生材料加工。

Y.Inoue, A.Yamaguchi, K.hasegawa, O.Takai: "Improvement of Electrovhromic Properties of Indium Nitride Films with Biomimetic Microstructure"International Workshop on Plasma Nano-Technology and Its Future Vision. 1. 11-11 (2004)

Y.Inoue、A.Yamaguchi、K.hasekawa、O.Takai：“仿生微结构改善氮化铟薄膜的电致变色性能”等离子体纳米技术及其未来愿景国际研讨会。