Optical device application of nano-structured electrochromic indium nitride films

(1)采用射频反应离子镀方法制备了InN薄膜。在10~(-4)Pa以下的沉积离子室内抽真空后，高纯度的N_2气体被引入，最高可达0.1~1Pa。通过射频天线向氮气中施加100W的射频功率，产生氮气辉光放电。然后，从氧化铝坩埚中蒸发金属铟。通过改变衬底托架的面内旋转条件，可以将薄膜的纳米结构控制为柱状、锯齿状和螺旋状纳米棒。薄膜的结晶度和化学成分几乎不变，最高可达0.3Pa.(3)用双光束分光光度计观察了薄膜的电致发光性能。比较了三种纳米结构InN的电导率，发现电导率的增强顺序为：锯齿形、螺旋形和柱状。Z字形薄膜的变色量是正常沉积的InN薄膜的2.5倍。变色的速度与纳米结构无关，比正常沉积的薄膜快2倍左右。

(1) The InN films were prepared by using an rf reactive ion plating method. After evacuation of a deposit ion chamber under 10-4 Pa, high-purity N2 gas was introduced upto 0.1 1 Pa. A 100 W rf power was applied into the N2 gas through an rf antenna to generate a nitrogen glow discharge. Then indium metal were evaporated from an alumina crucible. The angle of a substrate holder against the indium vapor flux was set at 85 degree.(2) By means of varying the in-plane rotation condition of the substrate holder, the nanostructure of the films can be controlled into columnar, zig-zag and helical nanorods. The crystallinity and chemical composition of the films are almost constant upto 0.3 Pa.(3) The EC properties were observed by using a double-beam optical spectrophotometer. Comparing the EC properties for the three types of nano-structured InN, we found that the order of the EC enhancement as zig-zag, helical and columnar. The zig-zag film showed 2.5 times larger color change quantity than that of the normally-deposited InN film. The speed of color change was independent of the nano-structure, around 2 times faster than the normally-deposited film.