Optical device application of nano-structured electrochromic indium nitride films

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(1) The InN films were prepared by using an rf reactive ion plating method. After evacuation of a deposit ion chamber under 10-4 Pa, high-purity N2 gas was introduced upto 0.1 1 Pa. A 100 W rf power was applied into the N2 gas through an rf antenna to generate a nitrogen glow discharge. Then indium metal were evaporated from an alumina crucible. The angle of a substrate holder against the indium vapor flux was set at 85 degree.(2) By means of varying the in-plane rotation condition of the substrate holder, the nanostructure of the films can be controlled into columnar, zig-zag and helical nanorods. The crystallinity and chemical composition of the films are almost constant upto 0.3 Pa.(3) The EC properties were observed by using a double-beam optical spectrophotometer. Comparing the EC properties for the three types of nano-structured InN, we found that the order of the EC enhancement as zig-zag, helical and columnar. The zig-zag film showed 2.5 times larger color change quantity than that of the normally-deposited InN film. The speed of color change was independent of the nano-structure, around 2 times faster than the normally-deposited film.