Improvement of Organosilicon Ion Beam Technology and Application to SiC Heteroepitaxy

有机硅离子束技术改进及其在SiC异质外延中的应用

• 批准号: 13558055
• 负责人: GOTO Seiichi
• 金额: $ 6.02万
• 依托单位: OSAKA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13558055/
• 关键词: SiC Heteroepitaxy; Organosilicon Beam; Diamond Epitaxy; Carbon Ion Beam; FRC Plasma; SiC; メチルシリセニウムイオン; ヘテロエピタキシャル成長; 高速中性粒子

The main object of the project is to make improvements of the organosilicon ion beam technology and to use its beam for SiC heteroepitaxy research, including some spin-off effects of the ion beam technology to other field. The object has been divided into three things, and the research results follow those(1) Reduction of fast neutrals included in the decerelated ion beam.Introduction of a quadrapole imaging system and a graphite beam aperture has attained the reduction of fast neutrals containment from 2% to 0.5% and also the increase of beam current density by a factor2. (Papers in preparation)(2) Reduction of deposition temperature and the beam energy dependence of crystallizationIn 100eV SiC heterpepitaxial growth, the temperature of the target Si wafer has been lowered to 500℃. In the deposition experiment with beam energy between 10 and 100eV, it is found that the transition of the crystallized characteristics changes from 4H-SiC to 3C-SiC(001). (Papers in preparation)(3) Spin-off experiment of the ion beam technology We have tried C^+ beam deposition on the Si wafer without any diamond nucleolus at the liquid nitrogen temperature, but this has not been succeeded yet. An application of the technique to a high temperature plasma experiment. Using other ion sources, the beam injection experiment has been done to FRC plasma, successfully

本项目的主要目的是对有机硅离子束技术进行改进，并将其束流用于SiC异质外延的研究，包括离子束技术在其他领域的一些衍生效应。研究对象分为三个方面，研究结果如下：(1)脱相干离子束中包含的快中性的还原。引入四轴成像系统和石墨光束孔径后，快中性容器从2%降低到0.5%，光束电流密度也增加了1倍。(2)降低沉积温度和晶化对束流能量的依赖在100eV SiC异轴生长中，目标硅片温度降低到500℃。在束流能量为10 ~ 100eV的沉积实验中，发现结晶特性由4H-SiC转变为3C-SiC（001）。(3)离子束技术的自旋实验我们曾尝试在液氮温度下将C^+离子束沉积在不含金刚石核核的硅片上，但尚未成功。该技术在高温等离子体实验中的应用。利用其他离子源，成功地对FRC等离子体进行了束流注入实验

项目成果

木内 正人 et al.: "イオンビームに含まれる中性粒子のための計測器の試作"真空. 44・3. 380-380 (2001)

Masato Kiuchi 等人：“离子束中所含中性粒子测量仪器的原型”真空 44・3。

S. Goto et al.: "Neutral-Beam assisted experiment of an FRC plasma."Proc. EPS Conference on Plasma Physics. Vol.26B. CD ROM P4085 (2002)

S. Goto 等人：“FRC 等离子体的中性束辅助实验”。

F.Kodera et al.: "Confinement characteristics of low density FRC plasma."Journal of Plasma and Fusion Research SERISE. Vol.5(in print). (2003)

F.Kodera 等人：“低密度 FRC 等离子体的限制特征。”等离子体与融合研究杂志系列。

S.Goto et al.: "Neutral-Beam assisted experiment of an FRC plasma"Proc. EPS Conference on Plasma Physics. Vol.26B(CD-ROM). 4085 (2002)

S.Goto 等人：“FRC 等离子体的中性束辅助实验”Proc。

F.Kodera et al.: "Confinement characteristics of low density FRC plasma"Journal Plasma and Fusion Research SERIES. Vol.5(in print). (2003)

F.Kodera 等人：“低密度 FRC 等离子体的限制特性”期刊等离子体与聚变研究系列。