Research on a functional inverter discharge plasma and a deposition of low frictional thin films for metal mechanical parts
Research on a functional inverter discharge plasma and a deposition of low frictional thin films for metal mechanical parts
批准号:
11558053
负责人:
GOTO Seiichi
金额:
$5.95万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B).
财政年份:
1999
资助国家:
日本
项目状态:
已结题
起止时间:
1999 至 2000
中文摘要
本文介绍了一种用旋转泵获得中等本底气压(10^1 ~ 10^3 Pa)的直流辉光放电系统的逆变器直接驱动技术。由于所开发的系统产生的等离子体具有与直流等离子体基本上相似的性质,我们可以利用简单的放电电极,如平行板,这将被扩展为大面积处理,在一个低成本。另外,由逆变电路产生的双极性脉冲驱动的等离子体具有电荷抵消功能,有利于隔离表面处理。本研究获得了以下结果:1.在一对平行板电极之间产生了气压为100 Pa的Ar等离子体。等离子体峰值密度为1 ×10 ~(-6)<10>cm ~ 2<-1>,峰值温度为2 × 10 ~(-6)eV,可用于实际的表面处理和薄膜沉积。2.采用异步高压交变脉冲方式,在中等以上气压范围内改善了溅射薄膜的附着性能。在100 ~ 600 Pa(甲烷)压力下,以1.5μm/h的沉积速率在SUS 304和Si(100)衬底上沉积了DLC膜。通过膜厚测量、显微维氏硬度测试、原子力显微镜、傅立叶变换红外光谱和拉曼散射光谱等手段对DLC膜的基本特性进行了评价。作为滑动试验的实际结果,我们还观察到涂覆有DLC膜的金属部件之间的动摩擦系数的降低。
英文摘要
An inverter-direct-driving technique has been introduced to a dc glow discharge system in a middle background pressure resion (10^1〜10^3 Pa) obtained with rotary pumps. Because the plasma produced with the developed system has the similar properties as those of dc plasmas basically, we can utilize simple discharge electrodes such as parallel plates that would be extended for large area processing in a low cost. In addition, the plasma driven by the bipolar pulses from the inverter circuit has a charge-up cancellation function that is advantageous to isolated surface treatments.We have obtained the following results from this research.1.We produced an Ar plasma at a pressure of 100 Pa between a pair of parallel-plate electrodes. The peak plasma density and temperature were 1〜6×10^<10> cm^<-1> and 2〜6 eV, which indicates that this discharge can be applicable to practical surface treatment and film deposition.2.Using an asynchronous high-voltage alternating pulsing mode, we have improved the adhesion property of a sputtering thin film under the above middle pressure region.Next, a diamond-like carbon (DLC) film deposition experiment has been performed. The DLC films have deposited on SUS304 and Si (100) substrates under a pressure of 100〜600Pa (methane) at a deposition rate of 1.5μm/h. The basic characteristics of the DLC films have been estimated with film thickness measurement, micro Vickers hardness test, AFM, FTIR, and Raman Scattering Spectroscopy. As a practical result of a sliding test, we have also observed the decrease of the kinetic friction coefficient between metal parts coated with the DLC films.
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T.Matsumoto: "Deposition of cubic-SiC thin films on Si (111) using the molecular ion beam technique"Mat.Res.Soc.Symp.Proc.. Vol.585. 165-169 (2000)
T.Matsumoto:“使用分子离子束技术在 Si (111) 上沉积立方碳化硅薄膜”Mat.Res.Soc.Symp.Proc.. Vol.585。
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T.Matsumoto: "Growth of 3C-SiC thin films on Si (100) by molecular ion beam deposition"Abstracts of the International Symposium on Surface and Interface. 70-70 (2000)
T.Matsumoto:“通过分子离子束沉积在 Si (100) 上生长 3C-SiC 薄膜”表面与界面国际研讨会摘要。
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"Ion assisted deposition of copper using inverter plasma"Surface and Coatings Technology. Vol.136. 273-275
“使用逆变等离子体的离子辅助沉积铜”表面和涂层技术。
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木内正人: "イオンビームに含まれる中性粒子の計測器の試作"J.Vac.Soc.Jpn.(真空). Vol.44(掲載予定). (2001)
Masato Kiuchi:“离子束中包含的中性粒子测量仪器的原型”J.Vac.Soc.Jpn.(真空)(2001 年)。
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S.Takechi: "Characteristics of an inverter power discharge for plasma production"Proceedings of the 25th International Conference on Phenomena in Ionized Gases. (掲載予定). (2001)
S.Takechi:“用于等离子体生产的逆变器功率放电的特征”第 25 届国际电离气体现象会议论文集(即将出版)。
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共 35 条
Current drive and its spatial diffusion of high-beta plasma by the application of RF rotating magnetic field
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批准号:14380212
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$5.89万
-
财政年份:2002
-
负责人:GOTO Seiichi
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依托单位:
Improvement of Organosilicon Ion Beam Technology and Application to SiC Heteroepitaxy
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批准号:13558055
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$6.02万
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财政年份:2001
-
负责人:GOTO Seiichi
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依托单位:
Investigation of behavior of scrape-off plasma flow in ultra-high beta configuration
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批准号:11480108
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$7.81万
-
财政年份:1999
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负责人:GOTO Seiichi
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依托单位:
Development on FRC Plasma Sustainment Method for Helium-3 Fusion
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批准号:08558053
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$6.53万
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财政年份:1996
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负责人:GOTO Seiichi
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依托单位:
High Energy Particle Effect on High - Beta FRC Plasma in Mirror Field
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批准号:03402050
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项目类别:Grant-in-Aid for General Scientific Research (A)
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资助金额:$8.45万
-
财政年份:1991
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负责人:GOTO Seiichi
-
依托单位:
海外基金