Research on a functional inverter discharge plasma and a deposition of low frictional thin films for metal mechanical parts

功能性逆变放电等离子体及金属机械零件低摩擦薄膜沉积研究

基本信息

  • 批准号:
    11558053
  • 负责人:
  • 金额:
    $ 5.95万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B).
  • 财政年份:
    1999
  • 资助国家:
    日本
  • 起止时间:
    1999 至 2000
  • 项目状态:
    已结题

项目摘要

An inverter-direct-driving technique has been introduced to a dc glow discharge system in a middle background pressure resion (10^1〜10^3 Pa) obtained with rotary pumps. Because the plasma produced with the developed system has the similar properties as those of dc plasmas basically, we can utilize simple discharge electrodes such as parallel plates that would be extended for large area processing in a low cost. In addition, the plasma driven by the bipolar pulses from the inverter circuit has a charge-up cancellation function that is advantageous to isolated surface treatments.We have obtained the following results from this research.1.We produced an Ar plasma at a pressure of 100 Pa between a pair of parallel-plate electrodes. The peak plasma density and temperature were 1〜6×10^<10> cm^<-1> and 2〜6 eV, which indicates that this discharge can be applicable to practical surface treatment and film deposition.2.Using an asynchronous high-voltage alternating pulsing mode, we have improved the adhesion property of a sputtering thin film under the above middle pressure region.Next, a diamond-like carbon (DLC) film deposition experiment has been performed. The DLC films have deposited on SUS304 and Si (100) substrates under a pressure of 100〜600Pa (methane) at a deposition rate of 1.5μm/h. The basic characteristics of the DLC films have been estimated with film thickness measurement, micro Vickers hardness test, AFM, FTIR, and Raman Scattering Spectroscopy. As a practical result of a sliding test, we have also observed the decrease of the kinetic friction coefficient between metal parts coated with the DLC films.
将逆变器直接驱动技术引入到旋转泵获得的中背景压力(10^1〜10^3 Pa)的直流辉光放电系统中。由于用所开发的系统产生的等离子体基本上具有与直流等离子体相似的特性,因此我们可以利用简单的放电电极(例如平行板),将其扩展到以低成本进行大面积处理。此外,由逆变器电路产生的双极脉冲驱动的等离子体具有充电抵消功能,有利于隔离表面处理。通过这项研究,我们得到了以下结果:1.我们在一对平行板电极之间产生了压力为100 Pa的Ar等离子体。峰值等离子体密度和温度分别为1〜6×10^<10> cm^<-1>和2〜6 eV,这表明该放电可适用于实际的表面处理和薄膜沉积。2.采用异步高压交变脉冲模式,提高了上述中压区域下溅射薄膜的附着性能。接下来,进行了类金刚石碳(DLC)薄膜沉积实验。 已执行。在100〜600Pa(甲烷)压力下,以1.5μm/h的沉积速率在SUS304和Si(100)基板上沉积DLC薄膜。通过膜厚测量、显微维氏硬度测试、AFM、FTIR 和拉曼散射光谱评估了 DLC 膜的基本特性。作为滑动测试的实际结果,我们还观察到涂有 DLC 薄膜的金属部件之间的动摩擦系数有所降低。

项目成果

期刊论文数量(86)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
T.Matsumoto: "Deposition of cubic-SiC thin films on Si (111) using the molecular ion beam technique"Mat.Res.Soc.Symp.Proc.. Vol.585. 165-169 (2000)
T.Matsumoto:“使用分子离子束技术在 Si (111) 上沉积立方碳化硅薄膜”Mat.Res.Soc.Symp.Proc.. Vol.585。
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T.Matsumoto: "Growth of 3C-SiC thin films on Si (100) by molecular ion beam deposition"Abstracts of the International Symposium on Surface and Interface. 70-70 (2000)
T.Matsumoto:“通过分子离子束沉积在 Si (100) 上生长 3C-SiC 薄膜”表面与界面国际研讨会摘要。
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    0
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"Ion assisted deposition of copper using inverter plasma"Surface and Coatings Technology. Vol.136. 273-275
“使用逆变等离子体的离子辅助沉积铜”表面和涂层技术。
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木内正人: "イオンビームに含まれる中性粒子の計測器の試作"J.Vac.Soc.Jpn.(真空). Vol.44(掲載予定). (2001)
Masato Kiuchi:“离子束中包含的中性粒子测量仪器的原型”J.Vac.Soc.Jpn.(真空)(2001 年)。
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    0
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S.Takechi: "Characteristics of an inverter power discharge for plasma production"Proceedings of the 25th International Conference on Phenomena in Ionized Gases. (掲載予定). (2001)
S.Takechi:“用于等离子体生产的逆变器功率放电的特征”第 25 届国际电离气体现象会议论文集(即将出版)。
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    0
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GOTO Seiichi其他文献

GOTO Seiichi的其他文献

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{{ truncateString('GOTO Seiichi', 18)}}的其他基金

Current drive and its spatial diffusion of high-beta plasma by the application of RF rotating magnetic field
射频旋转磁场对高β等离子体的电流驱动及其空间扩散
  • 批准号:
    14380212
  • 财政年份:
    2002
  • 资助金额:
    $ 5.95万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Improvement of Organosilicon Ion Beam Technology and Application to SiC Heteroepitaxy
有机硅离子束技术改进及其在SiC异质外延中的应用
  • 批准号:
    13558055
  • 财政年份:
    2001
  • 资助金额:
    $ 5.95万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Investigation of behavior of scrape-off plasma flow in ultra-high beta configuration
超高β配置中刮除等离子体流行为的研究
  • 批准号:
    11480108
  • 财政年份:
    1999
  • 资助金额:
    $ 5.95万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development on FRC Plasma Sustainment Method for Helium-3 Fusion
He-3聚变FRC等离子体维持方法的发展
  • 批准号:
    08558053
  • 财政年份:
    1996
  • 资助金额:
    $ 5.95万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
High Energy Particle Effect on High - Beta FRC Plasma in Mirror Field
镜场中高能粒子对高β FRC等离子体的影响
  • 批准号:
    03402050
  • 财政年份:
    1991
  • 资助金额:
    $ 5.95万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (A)

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Application of optical vortex spectroscopy to process plasma and development to new material creation
涡旋光谱在等离子体处理中的应用及新材料创造的发展
  • 批准号:
    18KK0079
  • 财政年份:
    2018
  • 资助金额:
    $ 5.95万
  • 项目类别:
    Fund for the Promotion of Joint International Research (Fostering Joint International Research (B))
Sputtering deposition using powder as a target and elucidation of its process plasma reaction mechanism
以粉末为靶材的溅射沉积及其过程等离子体反应机理的阐明
  • 批准号:
    15K21595
  • 财政年份:
    2015
  • 资助金额:
    $ 5.95万
  • 项目类别:
    Grant-in-Aid for Young Scientists (B)
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