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Research on a functional inverter discharge plasma and a deposition of low frictional thin films for metal mechanical parts

Research on a functional inverter discharge plasma and a deposition of low frictional thin films for metal mechanical parts
功能性逆变放电等离子体及金属机械零件低摩擦薄膜沉积研究
批准号:
11558053
负责人:
GOTO Seiichi
金额:
$5.95万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B).
财政年份:
1999
资助国家:
日本
项目状态:
已结题
起止时间:
1999 至 2000

项目摘要

项目成果

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中文摘要
翻译
将逆变器直接驱动技术引入回转泵获得的中等本底压力范围(10^1~10^3帕)的直流辉光放电系统。由于所研制的系统产生的等离子体具有与直流等离子体基本相似的性质,因此我们可以利用平行板等简单的放电电极,以低成本扩展到大面积加工。另外,从逆变电路输出的双极脉冲驱动的等离子体具有充电抵消功能,有利于隔离表面处理。我们的研究结果如下:1.在平行板电极之间产生了压力为100PaAr等离子体。峰值等离子体密度和温度分别为1~6×10~(-1)lt;10~(-1)cm~(-1)和2~6 eV,表明该放电可用于实际的表面处理和薄膜沉积。2.采用非同步高压交流脉冲模式,在上述中压区改善了溅射薄膜的附着力。在SU S 3 0 4和Si(10 0)衬底上,以1 5μm/h的沉积速率在10 0~6 0 0Pa(甲烷)的压力下沉积了类金刚石薄膜,并用薄膜厚度测量、显微维氏硬度测试、原子力显微镜、傅里叶变换红外光谱和拉曼散射光谱对薄膜的基本特性进行了表征。作为滑动试验的实际结果,我们还观察到涂覆类金刚石薄膜的金属部件之间的动摩擦系数降低。
英文摘要
An inverter-direct-driving technique has been introduced to a dc glow discharge system in a middle background pressure resion (10^1〜10^3 Pa) obtained with rotary pumps. Because the plasma produced with the developed system has the similar properties as those of dc plasmas basically, we can utilize simple discharge electrodes such as parallel plates that would be extended for large area processing in a low cost. In addition, the plasma driven by the bipolar pulses from the inverter circuit has a charge-up cancellation function that is advantageous to isolated surface treatments.We have obtained the following results from this research.1.We produced an Ar plasma at a pressure of 100 Pa between a pair of parallel-plate electrodes. The peak plasma density and temperature were 1〜6×10^<10> cm^<-1> and 2〜6 eV, which indicates that this discharge can be applicable to practical surface treatment and film deposition.2.Using an asynchronous high-voltage alternating pulsing mode, we have improved the adhesion property of a sputtering thin film under the above middle pressure region.Next, a diamond-like carbon (DLC) film deposition experiment has been performed. The DLC films have deposited on SUS304 and Si (100) substrates under a pressure of 100〜600Pa (methane) at a deposition rate of 1.5μm/h. The basic characteristics of the DLC films have been estimated with film thickness measurement, micro Vickers hardness test, AFM, FTIR, and Raman Scattering Spectroscopy. As a practical result of a sliding test, we have also observed the decrease of the kinetic friction coefficient between metal parts coated with the DLC films.
期刊论文(86)
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科研奖励(0)
会议论文
T.Matsumoto: "Deposition of cubic-SiC thin films on Si (111) using the molecular ion beam technique"Mat.Res.Soc.Symp.Proc.. Vol.585. 165-169 (2000)
T.Matsumoto:“使用分子离子束技术在 Si (111) 上沉积立方碳化硅薄膜”Mat.Res.Soc.Symp.Proc.. Vol.585。
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T.Matsumoto: "Growth of 3C-SiC thin films on Si (100) by molecular ion beam deposition"Abstracts of the International Symposium on Surface and Interface. 70-70 (2000)
T.Matsumoto:“通过分子离子束沉积在 Si (100) 上生长 3C-SiC 薄膜”表面与界面国际研讨会摘要。
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"Ion assisted deposition of copper using inverter plasma"Surface and Coatings Technology. Vol.136. 273-275
“使用逆变等离子体的离子辅助沉积铜”表面和涂层技术。
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木内正人: "イオンビームに含まれる中性粒子の計測器の試作"J.Vac.Soc.Jpn.(真空). Vol.44(掲載予定). (2001)
Masato Kiuchi:“离子束中包含的中性粒子测量仪器的原型”J.Vac.Soc.Jpn.(真空)(2001 年)。
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共 35 条
    Current drive and its spatial diffusion of high-beta plasma by the application of RF rotating magnetic field
    • 批准号:
      14380212
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $5.89万
    • 财政年份:
      2002
    • 负责人:
      GOTO Seiichi
    • 依托单位:
    Improvement of Organosilicon Ion Beam Technology and Application to SiC Heteroepitaxy
    • 批准号:
      13558055
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $6.02万
    • 财政年份:
      2001
    • 负责人:
      GOTO Seiichi
    • 依托单位:
    Investigation of behavior of scrape-off plasma flow in ultra-high beta configuration
    • 批准号:
      11480108
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $7.81万
    • 财政年份:
      1999
    • 负责人:
      GOTO Seiichi
    • 依托单位:
    Development on FRC Plasma Sustainment Method for Helium-3 Fusion
    • 批准号:
      08558053
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $6.53万
    • 财政年份:
      1996
    • 负责人:
      GOTO Seiichi
    • 依托单位:
    海外基金