Individual Growth of Carbon Nanotube by Controlling Reactive Plasma in Super-Strong Magnetic Field

超强磁场中控制反应等离子体的碳纳米管个体生长

基本信息

  • 批准号:
    14580511
  • 负责人:
  • 金额:
    $ 2.3万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 财政年份:
    2002
  • 资助国家:
    日本
  • 起止时间:
    2002 至 2003
  • 项目状态:
    已结题

项目摘要

The multi-walled carbon nanotubes (MWNTs) are formed by plasma-enhanced chemical vapor deposition directly on the rf electrode under the condition of the strong magnetic field.It is noted that the nanotube structure at B_z=0.03 T is very thick from the analysis by the transmission electron microscopy (TEM), it is confirmed that a few MWNTs combine with each other and become the thick nanotube-like graphitic material. In this case, since the ions are accelerated by the negative sheath voltage (V_<sh>) in front of the rf electrode and impinge on the rf electrode with high energy, the generated MWNTs are considered to be deformed by the bombardment of the high energy ions.When the strong magnetic field (B_z=2 T) is applied perpendicularly to the sheath electric field, the magnetic field prevents the high energy ions from directly impinging on the rf electrode due to the magnetization of ions, even if the large sheath electric field exists. Furthermore, the current of the ions as a carbon source toward the rf electrode remains to be enough large to form the nanotube. Thus, the MWNTs formed at B_z=2 T are found to be well-aligned by the sheath electric field and not to be deformed due to the reduction of the ion bombardment energy toward the rf electrode.This result can be explained by the reduction of the ion bombardment energy, which is caused by the magnetization of the ions for B_z=2 T. It is found that the controls of the sheath voltage and the ion bombardment energy by the magnetic field introduction have crucial effects on the nanotube growth.
采用等离子体增强化学气相沉积法,在强磁场作用下,直接在射频电极上制备了多壁碳纳米管(MWNTs),通过透射电子显微镜(TEM)分析发现,在B z=0.03 T时,多壁碳纳米管的结构很厚,证实了少量MWNTs相互之间发生了联合收割机结合,形成了较厚的纳米管状石墨材料。在这种情况下,由于离子在rf电极前被负鞘层电压(V_)加速<sh>并以高能量撞击rf电极,因此产生的MWNT被认为是由于高能离子的轰击而变形。当垂直于鞘层电场施加强磁场(B_z=2 T)时,磁场由于离子的磁化而阻止高能离子直接撞击rf电极,即使存在大的鞘层电场。此外,作为碳源的离子朝向rf电极的电流保持足够大以形成纳米管。因此,发现在B_z=2 T下形成的MWNTs被鞘电场良好地取向,并且不会由于朝向rf电极的离子轰击能量的减少而变形。这一结果可以通过离子轰击能量的减少来解释,这是由B_z=2 T时离子的磁化引起的。结果表明,磁场对鞘层电压和离子轰击能量的控制对纳米管的生长有重要影响。

项目成果

期刊论文数量(41)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
G.-H.Jeong: "Time Evolution of Nucleation and Vertical Growth of Carbon Nanotubes during Plasma-Enhanced Chemical Vapor Deposition"Japanese Journal of Applied Physics. 42. L1340-L1342 (2003)
G.-H.Jeong:“等离子体增强化学气相沉积过程中碳纳米管成核和垂直生长的时间演化”日本应用物理学杂志。
  • DOI:
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    0
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  • 通讯作者:
N.Satake: "Growth Mechanism and Structural Control of Carbon Nanotubes Produced by Using Radio-Frequency Glow-Discharge Reactive Plasma"Proceedings of The 20^<th> Symposium on Plasma Processing. 225-226 (2003)
N.Satake:“使用射频辉光放电反应等离子体生产的碳纳米管的生长机制和结构控制”第20届等离子体加工研讨会论文集。
  • DOI:
  • 发表时间:
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    0
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N.Satake: "Production of Carbon Nanotubes by Controlling Radio-Frequency Glow Discharge with Reactive Gases"Physica B. 323. 290-292 (2002)
N.Satake:“通过用活性气体控制射频辉光放电来生产碳纳米管”Physica B. 323. 290-292 (2002)
  • DOI:
  • 发表时间:
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  • 影响因子:
    0
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  • 通讯作者:
高周波放電プラズマCVDによるカーボンナノチューブ形成への強磁場印加の効果
强磁场施加对高频放电等离子体CVD形成碳纳米管的影响
Effects of Strong Magnetic Field on the Carbon Nanotube Formation in the RF Discharge Plasma CVD
强磁场对射频放电等离子体CVD中碳纳米管形成的影响
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HIRATA Takamichi其他文献

HIRATA Takamichi的其他文献

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{{ truncateString('HIRATA Takamichi', 18)}}的其他基金

Nerve cell tissue activation by a low invasion type micro spot atmospheric pressure plasma source
低侵入型微点常压等离子体源激活神经细胞组织
  • 批准号:
    21340173
  • 财政年份:
    2009
  • 资助金额:
    $ 2.3万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
The creation of life-body compatibleness type carbon nanotube device by multi-plasma source and living-body signal measurement
利用多等离子体源和活体信号测量创建生命体相容型碳纳米管器件
  • 批准号:
    19340178
  • 财政年份:
    2007
  • 资助金额:
    $ 2.3万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Basic research on development of hybrid electronic device by supporting of nanoscopic plasma process
支持纳米级等离子体工艺开发混合电子器件的基础研究
  • 批准号:
    16340176
  • 财政年份:
    2004
  • 资助金额:
    $ 2.3万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)

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用高灵敏X射线和伽马射线偏振法阐明中子星超强磁场
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