Development of a non-destructive measurement system of nanoscale properties of materials using carbon nanotubes

利用碳纳米管开发材料纳米级特性的无损测量系统

基本信息

  • 批准号:
    15310095
  • 负责人:
  • 金额:
    $ 8.83万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    2003
  • 资助国家:
    日本
  • 起止时间:
    2003 至 2004
  • 项目状态:
    已结题

项目摘要

This study aims to develop a non-destructive measurement system of nanoscale properties of materials using carbon nanotubes (CNT) as probes. CNT probes are necessary to reduce the size of the distance between probes, because of their novel structural properties in terms of small diameter and high-aspect ratio. In this study, carbon nanotube probes have been successfully fabricated using microwave enhanced plasma CVD technique, where optimum growth condition using lightning conductor is applied to grow carbon nanostructures selectively onto the apex of conventional tungsten probes. The performance of the :prepared CNT probe has been confirmed by the observation of lattice image of graphite surface. As for the non-destructive measurement, we have proposed a new approaching system. Using this system, the resistivity of a Si(111) wafer is measured by the four-point probe method with the probe spacing changed from 18 μm to 500 μm. The measured voltage vs. probe spacing curve is highly reproducible and is qualitatively in good agreement with the expected behavior, taking into account the correction factor for a non-semi-infinite medium. Lastly, we have developed a new measurement system based on null method to eliminate contact resistance, where biased-preamplifier is newly designed and evaluated in this study.
本研究旨在开发一种以碳纳米管(CNT)为探针的材料纳米级性能无损测量系统。碳纳米管探针具有小直径和高纵横比的新结构特性,是减小探针间距的必要条件。在本研究中,利用微波增强等离子体CVD技术成功制备了碳纳米管探针,该技术利用雷击导体的最佳生长条件选择性地在传统钨探针的顶端生长碳纳米结构。通过对石墨表面晶格图像的观察,证实了所制备的碳纳米管探针的性能。在无损检测方面,我们提出了一种新的逼近系统。利用该系统,在探针间距从18 μm到500 μm的范围内,采用四点探针法测量了Si(111)晶圆的电阻率。考虑到非半无限介质的校正因子,测量电压与探针间距曲线具有高度可重复性,并且在定性上与预期行为很好地一致。最后,我们开发了一种新的基于零值法消除接触电阻的测量系统,并对其中的偏置前置放大器进行了设计和评估。

项目成果

期刊论文数量(64)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Hydrogen interaction with Si(1 1 1) 3 x 3 -B surfaces
氢与 Si(1 1 1) 3 x 3 -B 表面的相互作用
  • DOI:
    10.1016/j.apsusc.2004.06.052
  • 发表时间:
    2004
  • 期刊:
  • 影响因子:
    3.3
  • 作者:
    M. Yoshimura;Kazutaka Watanabe;K. Ueda
  • 通讯作者:
    K. Ueda
Formation of micromeshes by nickel silicide
  • DOI:
    10.1016/j.tsf.2004.06.071
  • 发表时间:
    2004-10
  • 期刊:
  • 影响因子:
    2.1
  • 作者:
    K. Ueda;M. Yoshimura
  • 通讯作者:
    K. Ueda;M. Yoshimura
M.Yoshimura: "Step-debunching in Sn/Si(001) surfaces"Thin Solid Films. (In press). (2004)
M.Yoshimura:“Sn/Si(001) 表面的逐步脱聚”固体薄膜。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
K.Ueda: "Fabrication of nanofigures by focused electron beam-induced deposition"Thin Solid Films. (In press). (2004)
K.Ueda:“通过聚焦电子束诱导沉积制造纳米图形”固体薄膜。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
M.Yoshimura: "Hydrogen interaction with Si(111)-/3x/3-B surfaces"Applied Surface Science. (In press). (2004)
M.Yoshimura:“氢与 Si(111)-/3x/3-B 表面的相互作用”应用表面科学。
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  • 影响因子:
    0
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YOSHIMURA Masamichi其他文献

YOSHIMURA Masamichi的其他文献

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{{ truncateString('YOSHIMURA Masamichi', 18)}}的其他基金

Manipulation of fullerene molecules in graphene films
石墨烯薄膜中富勒烯分子的操控
  • 批准号:
    24656039
  • 财政年份:
    2012
  • 资助金额:
    $ 8.83万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
Improvement of Sliding Properties of Artificial Hip Joint Metals by Coating of Carbon Nanomaterials
碳纳米材料涂层改善人工髋关节金属滑动性能
  • 批准号:
    23651098
  • 财政年份:
    2011
  • 资助金额:
    $ 8.83万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
Digital Control of Terrace Width of One-dimensional Semiconductor Surfaces by Modification of Lattice Strain
通过修改晶格应变数字控制一维半导体表面的平台宽度
  • 批准号:
    12450024
  • 财政年份:
    2000
  • 资助金额:
    $ 8.83万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Atomic-scale Etching and Deposition using adsorbed Halogen gases on Semiconductor surfaces.
使用半导体表面吸附的卤素气体进行原子级蚀刻和沉积。
  • 批准号:
    06452121
  • 财政年份:
    1994
  • 资助金额:
    $ 8.83万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Phase transition of thin films of organic conductors studied by scanning tunneling spectroscopy
扫描隧道光谱研究有机导体薄膜的相变
  • 批准号:
    04650007
  • 财政年份:
    1992
  • 资助金额:
    $ 8.83万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)

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Development of Milli-Kelvin Micro-Four-Point Probe Method andResearch of Monolayer Superconductors
毫开尔文微四点探针法的发展及单层超导体的研究
  • 批准号:
    22246006
  • 财政年份:
    2010
  • 资助金额:
    $ 8.83万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Study of magnetic transport phenomena of surface nanostructures by twin micro four point probe method
双微米四点探针法研究表面纳米结构的磁输运现象
  • 批准号:
    18360018
  • 财政年份:
    2006
  • 资助金额:
    $ 8.83万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
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