Development of a non-destructive measurement system of nanoscale properties of materials using carbon nanotubes
Development of a non-destructive measurement system of nanoscale properties of materials using carbon nanotubes
批准号:
15310095
负责人:
YOSHIMURA Masamichi
金额:
$8.83万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2003
资助国家:
日本
项目状态:
已结题
起止时间:
2003 至 2004
中文摘要
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英文摘要
This study aims to develop a non-destructive measurement system of nanoscale properties of materials using carbon nanotubes (CNT) as probes. CNT probes are necessary to reduce the size of the distance between probes, because of their novel structural properties in terms of small diameter and high-aspect ratio. In this study, carbon nanotube probes have been successfully fabricated using microwave enhanced plasma CVD technique, where optimum growth condition using lightning conductor is applied to grow carbon nanostructures selectively onto the apex of conventional tungsten probes. The performance of the :prepared CNT probe has been confirmed by the observation of lattice image of graphite surface. As for the non-destructive measurement, we have proposed a new approaching system. Using this system, the resistivity of a Si(111) wafer is measured by the four-point probe method with the probe spacing changed from 18 μm to 500 μm. The measured voltage vs. probe spacing curve is highly reproducible and is qualitatively in good agreement with the expected behavior, taking into account the correction factor for a non-semi-infinite medium. Lastly, we have developed a new measurement system based on null method to eliminate contact resistance, where biased-preamplifier is newly designed and evaluated in this study.
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Hydrogen interaction with Si(1 1 1) 3 x 3 -B surfaces
氢与 Si(1 1 1) 3 x 3 -B 表面的相互作用
DOI:
10.1016/j.apsusc.2004.06.052
发表时间:
2004
期刊:
Physiotherapy
影响因子:
3.3
作者:
[M. Yoshimura, Kazutaka Watanabe, K. Ueda]
通讯作者:
K. Ueda
DOI:
10.1016/j.tsf.2004.06.071
发表时间:
2004-10
期刊:
Thin Solid Films
影响因子:
2.1
作者:
[K. Ueda;M. Yoshimura]
通讯作者:
K. Ueda;M. Yoshimura
M.Yoshimura: "Step-debunching in Sn/Si(001) surfaces"Thin Solid Films. (In press). (2004)
M.Yoshimura:“Sn/Si(001) 表面的逐步脱聚”固体薄膜。
DOI:
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作者:
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通讯作者:
K.Ueda: "Fabrication of nanofigures by focused electron beam-induced deposition"Thin Solid Films. (In press). (2004)
K.Ueda:“通过聚焦电子束诱导沉积制造纳米图形”固体薄膜。
DOI:
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发表时间:
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影响因子:
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作者:
[]
通讯作者:
M.Yoshimura: "Hydrogen interaction with Si(111)-/3x/3-B surfaces"Applied Surface Science. (In press). (2004)
M.Yoshimura:“氢与 Si(111)-/3x/3-B 表面的相互作用”应用表面科学。
DOI:
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发表时间:
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影响因子:
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共 18 条
Manipulation of fullerene molecules in graphene films
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批准号:24656039
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$2.58万
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财政年份:2012
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负责人:YOSHIMURA Masamichi
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依托单位:
Improvement of Sliding Properties of Artificial Hip Joint Metals by Coating of Carbon Nanomaterials
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批准号:23651098
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$2.5万
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财政年份:2011
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负责人:YOSHIMURA Masamichi
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依托单位:
Digital Control of Terrace Width of One-dimensional Semiconductor Surfaces by Modification of Lattice Strain
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批准号:12450024
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$5.38万
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财政年份:2000
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负责人:YOSHIMURA Masamichi
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依托单位:
Atomic-scale Etching and Deposition using adsorbed Halogen gases on Semiconductor surfaces.
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批准号:06452121
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.74万
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财政年份:1994
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负责人:YOSHIMURA Masamichi
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依托单位:
Phase transition of thin films of organic conductors studied by scanning tunneling spectroscopy
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批准号:04650007
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.34万
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财政年份:1992
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负责人:YOSHIMURA Masamichi
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依托单位:
海外基金