Residual Stress Measurement on Thin Films Using Low Energy Synchrotron Radiation

使用低能同步辐射测量薄膜的残余应力

• 批准号: 15560083
• 负责人: OHYA Shin-ichi
• 金额: $ 2.37万
• 依托单位: Musashi Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15560083/
• 关键词: Thin films; Residual stress; Synchrotron radiation; X-ray stress measurement; Surface energy; Crystallite size; Cu薄膜; 真性応力; 表面エネルギー; 界面応力; Cu

Residual stress was measured on sputter-deposited copper (Cu) thin films with a thickness of 0.2 to 3 μm by the x-ray diffraction method using synchrotron radiation. The influence of the surface energy of the substrate on the residual stress of the Cu thin films was studied. Polytetrafluoroethylene (PTFE) was used for the middle layer because it has much smaller surface energy than that of Si. The tendencies of the residual stress against the thin film thickness were very different according to the surface energy of the layer below. The crystallite size of the Cu sputtered on PTFE was smaller than the Cu sputtered on Si. The intrinsic stress calculated using a model proposed by L.B.Freund and Eric Chason [J.Appl.Phys.89,48(2001)] almost agreed with the measured residual stress. It was found that the residual stress of the Cu layer can be estimated by the crystallite size of Cu, which depends on the surface energy of the material of the layer below the Cu film, and the thickness of Cu film.

用同步辐射X射线衍射法测量了厚度为0.2 ~ 3 μm的铜（Cu）薄膜的残余应力。研究了衬底表面能对铜薄膜残余应力的影响。聚四氟乙烯（PTFE）用于中间层，因为它具有比Si小得多的表面能。残余应力对薄膜厚度的趋势是非常不同的，根据下面的层的表面能。溅射在PTFE上的Cu的晶粒尺寸小于溅射在Si上的Cu的晶粒尺寸。用L. B. Freund和EricChason [J.Appl.Phys.89，48（2001）]提出的模型计算的内应力与实测的残余应力基本一致。结果发现，铜层的残余应力可以估计由铜的微晶尺寸，这取决于表面能的层的材料下面的铜膜，和铜膜的厚度。

项目成果

Cu薄膜の残留応力に及ぼすPTFE中間層および膜厚の影響

PTFE中间层及膜厚对Cu薄膜残余应力的影响

• 发表时间: 2003
• 期刊: 第47回日本学術会議材料研究連合講演会論文集
• 作者: 熊谷正芳(武蔵工大院);秋田貢一(武蔵工大);大谷眞一(武蔵工大);ほか
• 通讯作者: ほか

秋田貢一, 大谷眞一, 萩原芳彦ほか: "シンクロトロン放射光によるMEMS内アルミニウム配線の応力評価"日本機械学会2003年度年次大会講演論文集. Vol.1. 243-244 (2003)

Koichi Akita、Shinichi Otani、Yoshihiko Hagiwara 等人：“使用同步加速器辐射对 MEMS 中的铝布线进行应力评估”日本机械工程师学会 2003 年年会论文集 1. 243-244（2003 年）。