The concentration profile of impurities in the Czochralski liquid metal under the rotational magnetic field.

旋转磁场下直拉液态金属中杂质的浓度分布。

• 批准号: 15560187
• 负责人: IWAMOTO Mitsuo
• 金额: $ 1.86万
• 依托单位: Oita University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15560187/
• 关键词: Magnetic field; Liquid metal; Czochralski method; Concentration; 回転磁場; 振動流

The single crystal of silicon is mainly manufactured by the Czochralski growing method from the molten silicon whose convection has been considered to be responsible for the quality of the single crystals. This study is our trial to employ a rotating magnetic field for liquid metal of Czochralski type configuration.In the experiment, Gallium melt (melting point, 303K) was used for the experimental fluid. A glass crucible is employed with its inner diameter 46 mm, in which gallium is filled at 45 mm high. The bottom plane of cooling rod is attached to the surface of gallium melt and the side and bottom walls of crucible were heated. The horizontal and the rotational magnetic field apply to the ocillating melt flow in the Czochralski configulation. As the results,1)The oscillation periods in the temperature differed under the horizontal and rotational magnetic field for the same magnetic intensity.2)The oscillation period under the rotational magnetic field decreased remarkably than the horizontal magnetic field.3)The oscillation period under the rotational magnetic field decreased with the magnetic flux density but increased for the horizontal magnetic field.The numerical computation carried out for the concentration profile of impurities in the Czochralski liquid metal under the rotational magnetic field. The average concentration at the crystal-melt interface decreasing with increasing the magnetic flux density and the rotional rates of magnetic field.

硅的单晶主要通过直拉法从熔融硅中生长，熔融硅的对流被认为是单晶质量的原因。本研究是我们对直拉式液态金属施加旋转磁场的尝试，实验中以镓熔体（熔点303 K）为实验流体。使用内径为46 mm的玻璃坩埚，其中镓填充在45 mm高。将冷却棒的底面贴在镓熔体表面，对坩埚的侧壁和底壁进行加热。在直拉法中，水平磁场和旋转磁场作用于振荡的熔体流动。作为结果，1）相同磁场强度下，水平磁场和旋转磁场下温度的振荡周期不同; 2）旋转磁场下温度的振荡周期比水平磁场下的振荡周期明显减小;旋转磁场下的振荡周期随磁通密度的增大而减小，而水平磁场下的振荡周期随磁通密度的增大而增大。旋转磁场下直拉液态金属中杂质的浓度分布。晶液界面平均浓度随磁场强度和磁场旋转速率的增大而减小。

项目成果

The effect of distribution coefficient for the oncentration profile in the Czochralski oscillating bulk flow under the magnetic field.

分布系数对磁场下直拉振荡整体流中浓度分布的影响。

• 发表时间: 2005
• 期刊: The 18th Symposium on Chemical Engineering, Korea
• 作者: Hirotaka Usuki;Seiji Nomura;Mituo Iwamoto;Masato Akamatsu;Hiroyuki Ozoe
• 通讯作者: Hiroyuki Ozoe

Shoji Wada, Mitsuo Iwamoto, Masato Akamatsu, Hiroyuki Ozoe: "The experimental study of Czochralski oscillating melt flow under the rotational magnetic field"The 16th Symposium on Chemical Engineering. 380-381 (2003)

Shoji Wada、Mitsuo Iwamoto、Masato Akamatsu、Hiroyuki Ozoe：“旋转磁场下直拉振荡熔体流动的实验研究”第十六届化学工程研讨会。

Numerical computation of the concentration profile in the Czochralski oscillating bulk flow under the rotational and horizontal magnetic field.

旋转和水平磁场下直拉振荡整体流中浓度分布的数值计算。

• 发表时间: 2004
• 期刊: The 17th Symposium on Chemical Engineering
• 作者: Hirotaka Usuki;Yuko Yoshida;Mitsuo Iwamoto;Masato Akamatsu;Hiroyuki Ozoe
• 通讯作者: Hiroyuki Ozoe

The study of Czochralski oscillating melt flow under a rotational magnetic field

旋转磁场下直拉振荡熔体流动的研究

• 发表时间: 2003
• 期刊: 4th international Workshop on Modeling in Crystal Growth
• 作者: Mitsuo Iwamoto;Masato Akamatsu;Shiyouji Wada;Yuji Anan;Toshio Tagawa;Hiroyuki Ozoe
• 通讯作者: Hiroyuki Ozoe

Yuko Yoshida, Mitsuo Iwamoto, Masato Akamatsu, Hiroyuki Ozoe: "The experimental study of Czochralski oscillating melt flow under the horizontal magnetic field"The 16th Symposium on Chemical Engineering. 378-379 (2003)

吉田裕子、岩本光雄、赤松正人、小佐博之：“水平磁场下直拉振荡熔体流动的实验研究”第十六届化学工程学术研讨会。