DEVELOPMENT OF MICRO ULTRAVIOLET RADIATION SENSOR

设计了一种基于GaxAl&lt；1-X&Gt；N晶体薄膜的微型紫外辐射传感器。制作了该传感器，并对其性能进行了评价。评价特点和结果如下。采用MOCVD法在蓝宝石衬底上生长了GaxAl&lt；1-X&Gt；N晶体薄膜。测试了薄膜的成分、结晶度和光谱特性。实验结果决定了薄膜的生长条件。测量了GaxAl&lt；1-X&Gt；N薄膜的光谱透过率和光谱响应率。根据分析结果，确定了用于该传感器的GaxxAl&lt；1-X&Gt；N薄膜的组成和膜厚。设计并制作了多层膜结构的微型紫外辐射传感器。传感器的光谱响应度由标准探测器根据光谱响应度进行标定。确认该传感器为UV-A、UV-B和UV-C传感器。

The micro ultraviolet radiation sensor using Ga_XAl_<1-X>N crystal thin films was designed. The sensor was fabricated and the performance was evaluated. Evaluating characteristics and the results are as follows. Ga_XAl_<1-X>N crystal thin films were grown by MOCVD on sapphire substrates. The composition, the crystallinity and the spectral characteristic of the films were measured. The growth condition of the film was decided by the results. The properties of spectral transmittance and of spectral responsivity were measured on the Ga_XAl_<1-X>N films. From the results, the compositions and the film thickness of the Ga_XxAl_<1-X>N films used in the sensor were decided. Micro ultraviolet radiation sensor with the multi-layer film structure was designed and was fabricated. The spectral responsivity of the sensor was caribrated by the standard detector on the spectral responsivity. It was confirmed that the sensor operated as UV-A, UV-B and UV-C sensor.