Fundamental Research for Fabrication and Application of high hardness Materials with Nano Size Grain Boundary at high temperature

高温纳米晶界高硬度材料制备及应用基础研究

• 批准号: 15560588
• 负责人: MATSUSHITA JUNICHI
• 金额: $ 1.86万
• 依托单位: Tokai University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2006
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15560588/
• 关键词: Silicon boride; Nano composite; Boride; High temperature material; Hardness; Grain boundary; Sintering; Sintered body

In this study, the fabrication and application research of Si-B-C system composite were investigated, to confirm whether the high temperature properties of SiB6 containing carbon ceramics can be improved. The samples were sintered by hot pressing in the simultaneous presence of carbon, in order to investigate the effects on properties of the sintered composites. It was found that the relative density of SiB6 with C sintered bodies became good densification at 1973 K for 1 hour in vacuum under a pressure of 25 MPa. The porosity of SiB6 containing 0, 5, 10, 15, and 20 mass% C sintered bodies was 1.0 %, 1.5 %, 2.8 %, and 20 %, respectively. Based on the XRD analysis results, the sintered composites exhibited diffraction peaks considered to be relevant to B4C and SiC, in addition to those relevant to SiB6, However, the diffraction peaks for C disappeared, and those for B4C and SiC. The Vickers hardness of the SiB6 with 10 mass % C composite was 28 and 22 GPa at room temperature and 1073 K, respectively. The hardness of the composite did not decrease with increasing measurement temperature. The Vickers hardness at high temperature of SiB6 addition of 10 mass% C composite was higher than Al2O3, ZrO2, and Si3N4 sintered bodies.

本研究对Si-B-C系复合材料的制备和应用进行了研究，以确定SiB 6/C系复合材料能否改善碳陶瓷的高温性能。在同时存在碳的情况下通过热压烧结样品，以研究对烧结复合材料的性能的影响。结果表明，在1973 K、25 MPa的真空中保温1 h，SiB 6/C烧结体的相对密度达到了较好的致密化。含有0、5、10、15和20质量% C的SiB 6烧结体的孔隙率分别为1.0%、1.5%、2.8%和20%。XRD分析结果表明，烧结后的复合材料除了SiB 6的衍射峰外，还出现了B4 C和SiC的衍射峰，而C的衍射峰消失，B4 C和SiC的衍射峰消失。在室温和1073 K下，含10质量% C的SiB 6复合材料的维氏硬度分别为28和22 GPa。复合材料的硬度不随测量温度的升高而降低。添加10质量% C的SiB 6复合材料的高温维氏硬度高于Al 2 O3、ZrO 2和Si 3 N4烧结体。

项目成果

Preparation of Si-B-C System Powder Using Silicon, Boron and Boron Carbide

利用硅、硼和碳化硼制备Si-B-C系粉末

• 发表时间: 2007
• 期刊: Materials Science Forum 544-545
• 作者: G.C.Hwang;J.Matsushita;J.J.Lee
• 通讯作者: J.J.Lee

Oxidation Behavior of Tantalum Boride Ceramics

• DOI: 10.4028/www.scientific.net/ssp.124-126.819
• 发表时间: 2007-06
• 期刊: Solid State Phenomena
• 作者: J. Matsushita;G. Hwang;K. Shim

Fabrication and Properties of SiB_6-B_4C-SiC Composites

SiB_6-B_4C-SiC复合材料的制备及性能

• 发表时间: 2007
• 期刊: Materials Science Forum 544-545
• 作者: G.C.Hwang;J.Matsushita;J.J.Lee
• 通讯作者: J.J.Lee

Sintering and Mechanical Properties of Chromium Boride-Chromium Carbide Composites

硼化铬-碳化铬复合材料的烧结及力学性能

• 发表时间: 2007
• 期刊: Materials Science Forum 534-636
• 作者: J.Matsushita;K.Shimao;Y.Machida;T.Takao;K.Iizumi;Y.Sawada;K.B.Shim
• 通讯作者: K.B.Shim

Oxidation behavior of a silicon boride composite

• 发表时间: 2004
• 期刊: Journal of Ceramic Processing Research
• 影响因子: 1.3
• 作者: J. Matsushita;Akiko Kitajima;Satoshi Okuhata;Bo Shim Kwang;Ho Auh Keun;K. Niihara