权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Containerless Process for the Spherical Single Crystal Semiconductor Silicon by the Gas Jet Flow Type Electromagnetic Levitation.

气体射流式电磁悬浮球形单晶半导体硅的无容器工艺。

基本信息

批准号：
15560646
负责人：
NAGAYAMA Katsuhisa
金额：
$ 1.92万
依托单位：
Shibaura Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2006
项目状态：
已结题

项目摘要

I researched and discussed the fabrication for the spherical single crystal semiconductor Si by using the gas jet flow type electromagnetic levitating process which is one of the containerless process. As with space, this levitating process can solidify metals and semiconductor without convection and container at ground level. Also, this process is new process which enables the high cooling rate and can detects the nucleation from undercooled Si melt. Furthermore, in view of the interaction between Si and high-frequency magnetic field, the sample for electromagnetic levitation is used the surface of high pure(99.999%) Si coated C or B by a high vaccum deposition apparatus. According to the results, this process enabels the containerless solidification for the B or C coated Si. Thereby, the validity of the new electromagnetic levitating process for B or C coated Si is clarified. Also, the undercooling ΔT is 150 K and 200 K for C or B coated Si, respectively. The cooling rate from the cooling start to the detection limit for pyrometer is 110 K/s and 300 K/s for C or B coated Si, respectively. Although crystal growth mode at lower undercoolings of C coated Si samples is faceted growth on the surface, the crystal growth mode of surface Si at higher undercoolings of samples is dendrite grown on the surface. Also, I obtained the a quantitative results about the relation between deposition time and solidification with undercooling of Si sample. From XRD measurements and SEM observation, the Si grain refinement with increasing the undercooling existed and the preferential growth orientation changes with increasing undercooling. As the results, I obtained the high validity of this process and the quantitative data.

研究和讨论了无容器气体射流式电磁悬浮法制备球形半导体硅单晶的工艺。与太空一样，这种悬浮过程可以在没有对流和地面容器的情况下固化金属和半导体。同时，该工艺是一种能实现高冷却速率并能检测过冷硅熔体形核的新工艺。此外，考虑到Si与高频磁场的相互作用，电磁悬浮用样品是用高真空沉积装置在C或B表面镀上高纯（99.999%）Si。结果表明，该工艺实现了B或C包覆Si的无容器凝固。从而阐明了电磁悬浮新工艺对B或C包硅的有效性。C和B包覆Si的过冷度ΔT分别为150 K和200 K。对于C或B涂覆的Si，从冷却开始到高温计检测极限的冷却速率分别为110 K/s和300 K/s。在较低过冷度下，C包覆Si样品的晶体生长方式为表面小面生长，而在较高过冷度下，表面Si样品的晶体生长方式为表面枝晶生长。同时也得到了沉积时间与硅样品凝固过冷度关系的定量结果。通过XRD和SEM观察发现，随着过冷度的增加，Si晶粒细化，并且随着过冷度的增加，Si晶粒的择优生长取向发生了变化。结果表明，该方法具有较高的有效性和定量数据.