Fabrication of Spin Controlled Semiconductor Superstructures

自旋控制半导体上部结构的制造

• 批准号: 09244102
• 负责人: OKA Yasuo
• 金额: $ 78.98万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research on Priority Areas
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-09244102/
• 关键词: Semiconductor nanostructures; superstructures; spin; diluted magnetic semiconductor; Magentic ions; exciton; Exchange interaction; Carrier-induced ferromagnetism; 半導体; ナノ構造; キャリアー

The group was organized to fabricate new superstructures of III-V and II-Vl diluted magnetic semiconductors and silicon system involving magnetic ions and to study the quantum magneto-optical properties, chemical-species dependence, magnetism and transport properties, spin dynamics and also to establish their basic theories. For these purposes, designing and fabrication of various semiconductor superstructures were made and explored the new magnetism and magneto-optical functionarities. Theoretical investigation of these new properties was also carried out.1. Fabrication and magneto-optical study of quantum nanostructures of diluted magnetic semiconductors New quantum nanostructures of diluted magnetic semiconductors CdMnTe and CdMnSe were fabricated and their magneto-optical properties and applications were studied. The magneto-optical effects and the spin dynamics of electrons and excitons were studied in these quantum wells, wires, and dots by the ultrafast time resolved photolumine … More scence spectroscopy and the pump-and probe transient absorption spectroscopy. New magneto-optical properties were found such as the exciton tunneling in double diluted magnetic quantum wells, the magnetic suppression of the non-radiative process of excitons in the quantum dots and the ultrafast spin relaxation processes of excitons.2.Carrier concentration dependence and chemical trend of electronic and magnetic properties on III-V diluted magnetic semiconductors Carrier concentration control of (Ga, Mn)As was investigated by incorporation of donor and acceptor. Sn-donors were introduced to (Ga, Mu)As up to 5% and the n-type doping demonstrated the possibility of the control of the hole concentration of (Ga, Mn)As3.Growth and properties of silicon-related superstructures doped heavily with magnetic impurities Si-based diluted magnetic semiconductors were fabricated by laser ablation and photo-excited CVD methods. Si films with high concentration of Mn were obtained. A first principle calculation was performed-to indicate that the ferromagnetism similar to that in (Ga, Mn)As is possible in Si : Mn systems.4. Hybrid superstructures based on diluted magnetic III-V semiconductors The carrier induced magnetism with a light irradiation on the (In, Mn)As/(Ga, Al)Sb heterostructures was studied. The results demonstrated the importance of interplay between non-magnetic and magnetic semiconductor layers. Preparation of III-V diluted magnetic semiconductors with Fe ions was also develnned Less

本课题组的主要任务是制备III-V和ii - v稀释磁性半导体和含磁性离子硅体系的新型超结构，研究量子磁光性质、化学物质依赖、磁性和输运性质、自旋动力学，并建立其基本理论。为此，设计和制造了各种半导体超结构，并探索了新的磁性和磁光功能。对这些新性质也进行了理论研究。制备了新型稀释磁性半导体CdMnTe和CdMnSe的量子纳米结构，并对其磁光性能和应用进行了研究。利用超快时间分辨光致发光光谱和泵浦-探针瞬态吸收光谱研究了这些量子阱、量子线和量子点中的磁光效应以及电子和激子的自旋动力学。发现了双稀释磁量子阱中激子隧穿、量子点中激子非辐射过程的磁抑制以及激子超快自旋弛豫等新的磁光特性。研究了（Ga, Mn）As的载流子浓度对供体和受体的控制。在（Ga, Mu）As中引入最多5%的sn给体，n型掺杂证明了控制（Ga, Mn）As3空穴浓度的可能性。采用激光烧蚀和光激发CVD方法制备了掺杂大量磁性杂质的硅基稀释磁性半导体的生长和性能。得到了具有高浓度Mn的Si薄膜。进行了第一性原理计算，表明在Si: Mn体系中可能具有与（Ga, Mn）相似的铁磁性。研究了（In, Mn）As/(Ga, Al)Sb异质结构在光照射下的载流子感应磁性。结果表明非磁性和磁性半导体层之间相互作用的重要性。研究了用铁离子制备III-V稀释磁性半导体的方法

项目成果

J.X.Shen, Y.Oka, W.Ossau, F.Fischer, A.Waag, G.Landwehr: "Difference of Self-Energy Corrections for Charged and Uncharged States in Degenerate Two Dimensional Systems"Physica B.. 249/251. 589 (1998)

J.X.Shen、Y.Oka、W.Ossau、F.Fischer、A.Waag、G.Landwehr：“简并二维系统中带电和不带电状态的自能校正差异”Physica B.. 249/251。

S.Abe, H.Nakayama, T.Nishino, H.Ohta and S.Iida: "subtracted Auger electron spectra of heavily doped transition metal impurities in Si"J.Cryst.Growth. 210. 137-142 (2000)

S.Abe、H.Nakayama、T.Nishino、H.Ohta 和 S.Iida：“Si 中重掺杂过渡金属杂质的减法俄歇电子光谱”J.Cryst.Growth。

H.Nakayama, T.Morishita, T.Ekaitsu and T.Nishino: "Monte-Carlo master equation method for a simulation of epitaxial growth dynamics"Appl.Surf.Sci. (in press.). (2000)

H.Nakayama、T.Morishita、T.Ekaitsu 和 T.Nishino：“用于模拟外延生长动力学的蒙特卡罗主方程方法”Appl.Surf.Sci。

A.Nagashima, T.Kimura, J.Yoshino: "Formation of an ordered surface compound consisting of Ag, Si, and H on Si(001)"Appl.Surf.Sci.. 130-132. 248-53 (1998)

A.Nagashima、T.Kimura、J.Yoshino：“在 Si(001) 上形成由 Ag、Si 和 H 组成的有序表面化合物”Appl.Surf.Sci.. 130-132。

S.Abe, H.Nakayama, T.Nishino, and S.Iida: "Auger valence electron spectra in Ca-silicides"J.Mat.Res.. 12, No.2. 407-411 (1997)

S.Abe、H.Nakayama、T.Nishino 和 S.Iida：“Ca-硅化物中的俄歇价电子谱”J.Mat.Res.. 12，第 2 期。