FABRICATION OF HIGH-RESOLUTION INVERSE PHOTOEMISSION SPECTROSCOPY SYSTEM FOR ORGANIC MATERIALS AND OBSERVATION OF UNICCUPIED ELECTRONIC STATES OF FUNCTIONAL ORGANIC MATERIALS

有机材料高分辨率反光发射光谱系统的制作及功能有机材料空载电子态的观测

• 批准号: 16550012
• 负责人: KANAI Kanae
• 金额: $ 2.37万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2004
• 资助国家: 日本
• 起止时间: 2004 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-16550012/
• 关键词: inverse photoemission spectroscopy; organic semiconductor; unoccupied states; electron transport material; CNT field emitter; ionic liquid; high energy resolution; 電界放出素子; 有機薄膜; 高エネルギー分解能; 試料の低損傷化; 電解放出素子; 全フッ素化アルカン

We spent 2004 and 2005 to design and fabricate the high-resolution inverse photoemission spectroscopy system. First, the high-resolution electron-gun for excitation were fabricated. The CNT-field emitter device (CNT-FED) was employed for new-type electron source for the e-gun. Because of smaller energy distribution of electrons emitted from CNT-FED, fabricated e-gun shows higher resolution 〜 0.2 eV than conventional electron sources. We employed two methods to detect the radiated photon by inverse photoemission as following, (1) band-pass typed detector with SrF_2 window and KCL-coated channeltron was fabricated and we succeeded to get high resolution less than 0.2 eV by taking difference between the spectra observed with different temperature of SrF_2 window. (2) We designed and fabricated VUV-spectrometer for IPES mode detection which consists of the spectrometer and VUV-ellipsoid mirror. The sample-manipulator for reduction of radiation damage of the sample by electron impact was designed and fabricated.The properties of the e-gun were checked by photoelectron spectrometer. The properties of VUV-spectrometer were checked by using synchrotron radiation (IMS-UVSOR BL8B2) in VUV region. The total energy resolution of the system was estimated to be about 0.3 eV from the Fermi-edge of evaporated gold film.Studies on several semiconductive organic materials were performed by fabricated systems. We succeeded to observe the unoccupied electronic states of zincphthalocyanine (ZnPc) and perfluorinated ZnPc thin films, perylenetetracarboxylic acid dianhydride (PTCDA) thin films, some ionic liquid (bmimBF_4 and bmimPF_6) and some biradical molecules (IDPL and NDPL) thin films.Manuscripts about fabrication of the new inverse photoemission system for organic materials and observation of unoccupied states of some organic thin films as mentioned above are in preparation now.

我们花了2004年和2005年设计和制造了高分辨率逆光电子能谱系统。首先，制作了用于激发的高分辨率电子枪。电子枪新型电子源采用碳纳米管场发射器件（CNT-FED）。由于CNT-FED发射的电子能量分布更小，所制造的电子枪比传统电子源具有更高的分辨率〜0.2 eV。我们采用两种方法通过反光电子发射来检测辐射光子：（1）制作了带有SrF_2窗口和KCL涂层通道加速器的带通型探测器，并通过在SrF_2窗口的不同温度下观察到的光谱之间的差异成功地获得了小于0.2 eV的高分辨率。 (2)设计并制作了用于IPES模式检测的VUV光谱仪，它由光谱仪和VUV椭球镜组成。设计并制作了减少电子碰撞对样品辐射损伤的样品操作器。利用光电子能谱仪对电子枪的性能进行了检测。 VUV 光谱仪的性能通过在 VUV 区域使用同步加速器辐射 (IMS-UVSOR BL8B2) 进行检查。该系统的总能量分辨率估计约为蒸发金膜费米边的0.3 eV。通过制造的系统对几种半导体有机材料进行了研究。我们成功地观察到了酞菁锌（ZnPc）和全氟ZnPc薄膜、苝四甲酸二酐（PTCDA）薄膜、一些离子液体（bmimBF_4和bmimPF_6）和一些双自由基分子（IDPL和NDPL）薄膜的未占据电子态。 目前正在准备新型有机材料逆光电发射系统的制造以及对一些有机薄膜的未占态的观察。