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Role of dangling bonds for the photoluminescence of Er doped in a-Si : H

悬挂键对非晶硅中掺铒光致发光的作用：H

基本信息

批准号：
16560005
负责人：
KUMEDA Minoru
金额：
$ 1.92万
依托单位：
Kanazawa University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2004
资助国家：
日本
起止时间：
2004 至 2006
项目状态：
已结题

项目摘要

In order to see a role of Si dangling bonds in the photoluminescence(PL) mechanism of Er which is doped in a-Si : H, it is thought to be useful that the Er site is separated from the Si dangling bond site and the influence of changing the separation on the Er PL is observed. To realize the idea, Er ions are added in two kinds of wide gap materials to inhibit the optical absorption of the host materials. Crystalline LiNbO_3 or amorphous Al_2O_3 are tried as wide gap materials. On top of the Er-doped thin film of the wide gar material, a-Si : H was deposited. The Er PL was not enhanced, however, when there was only one interface between a-Si : H and the wide gap material. In order to have a better sensitivity, we prepared a multilayer structure of the formAl_2O_3 : Er/a-Si : H/Al_2O_3 : Er/a-Si : H/Al_2O_3 : Er with around 20 nm thick a-Si : H layers sandwiched between Er-doped Al_2O_3.After annealing at 300 C, the Er PL was observed, while the threefold-stacked layer without a-Si : H la … More yer did not exhibit the Er PL after the same procedure. The observed results indicate that the thin a-Si : H layer is useful to excite Er ions which locate apart from a-Si : H. We cannot conclude at present whether Si dangling bonds in a-Si : H really play a role in enhancing the Er PL or not. Further investigations by changing the thicknesses of a-Si : H and Er-doped Al_2O_3 are needed to clarify the mechanism.We also studied on the environment of an Er ion by calculating the Stark levels due to the ligand field and by comparing the results with the PL spectra observed at 19 K. A model fo the Er environment is one that an Er ion is surrounded six oxygens which are incorporated unintentionally into a-Si : H during preparation. It should be emphasized that we did not rely on fitting parameters whose physical meaning were not clear but started with the wavefunction of the Er ion. Thus the effect of changing the distance between the Er and 0 atoms on the Stark splitting can be deduced. We conlude that the environmental model is consistent with the observed Er PL spectra. The fluctuation of the structure due to the randomness of the amorphous network is most probably the origin of the linewidth of the Er PL spectra. Less

为了看到Si悬挂键在掺杂在a-Si：H中的Er的光致发光（PL）机制中的作用，认为将Er位点与Si悬挂键位点分离是有用的，并且观察改变分离对Er PL的影响。为了实现这一想法，在两种宽禁带材料中加入Er离子来抑制主体材料的光吸收。晶体LiNbO_3或非晶Al_2O_3被尝试用作宽禁带材料。在掺铒宽锗材料薄膜的顶部沉积a-Si：H。当a-Si：H与宽禁带材料之间只有一个界面时，Er PL没有增强。为了获得更好的灵敏度，我们制备了Al_2O_3：Er/a-Si：H/Al_2O_3：Er/a-Si：H/Al_2O_3：Er多层结构，其中a-Si：H层厚度约为20 nm，中间夹有掺Er的Al_2O_3。经300 ℃退火后，观察到了Er的PL，而没有a-Si：H层的三层结构的PL仅为100 nm。 ...更多信息在相同的程序后，Yer没有表现出Er PL。结果表明，薄的a-Si：H层有利于激发远离a-Si：H的Er离子。目前我们还不能断定a-Si：H中的Si悬挂键是否真的在增强Er PL中起作用。通过改变a-Si：H和掺Er的Al_2O_3的厚度，我们还研究了Er离子的环境，计算了由配位场引起的Stark能级，并与19 K下的PL谱进行了比较。Er环境的模型是Er离子被六个在制备过程中无意地掺入a-Si：H中的氧包围。应该强调的是，我们没有依赖于拟合参数，其物理意义不明确，而是从Er离子的波函数开始。由此可以推断出改变Er原子和O原子之间的距离对Stark分裂的影响。我们的结论是，环境模型是与观察到的Er PL谱一致。由于非晶网络的随机性而引起的结构的涨落很可能是Er PL谱线宽度的来源。少

项目成果

期刊论文数量（12）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Environment of Er Doped in a-Si : H and Its Relation with Photoluminescence Spectra

a-Si中Er掺杂:H的环境及其与光致发光光谱的关系

DOI：
发表时间：
2006
期刊：
Mat. Res. Soc. Symp. Proc. 910
影响因子：
0
作者：
Kaoru Shimamura;Nobuyuki Michiaki;Takaya Ikeda;Tetsuya Uchida;Manabu Hirao;Masao OHASHI;M.Kumeda et al.
通讯作者：
M.Kumeda et al.

Stark splitting in photoluminescence spectra of Er in a-Si : H

a-Si : H 中 Er 的光致发光光谱中的斯塔克分裂

DOI：
发表时间：
2005
期刊：
Mat. Res. Soc. Symp. Proc. 862
影响因子：
0
作者：
Minoru Kumeda;Yoshitaka Sekizawa;Akiharu Morimoto;Tatsuo Shimizu;大橋正夫;M.Kumeda et al.
通讯作者：
M.Kumeda et al.

Stark Splitting in Photoluminescence of Er in a-Si : H

a-Si 中 Er 的光致发光中的斯塔克分裂：H

DOI：
发表时间：
2005
期刊：
Mat.Res.Soc.Symp.Proc. 862
影响因子：
0
作者：
Minoru Kumeda;Yoshitaka Sekizawa;Akiharu Morimoto;Tatsuo Shimizu;大橋正夫;M.Kumeda et al.;Masao OHASHI;M.Kumeda
通讯作者：
M.Kumeda