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Role of dangling bonds for the photoluminescence of Er doped in a-Si : H

Role of dangling bonds for the photoluminescence of Er doped in a-Si : H
悬挂键对非晶硅中掺铒光致发光的作用:H
批准号:
16560005
负责人:
KUMEDA Minoru
金额:
$1.92万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2004
资助国家:
日本
项目状态:
已结题
起止时间:
2004 至 2006

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英文摘要
In order to see a role of Si dangling bonds in the photoluminescence(PL) mechanism of Er which is doped in a-Si : H, it is thought to be useful that the Er site is separated from the Si dangling bond site and the influence of changing the separation on the Er PL is observed. To realize the idea, Er ions are added in two kinds of wide gap materials to inhibit the optical absorption of the host materials. Crystalline LiNbO_3 or amorphous Al_2O_3 are tried as wide gap materials. On top of the Er-doped thin film of the wide gar material, a-Si : H was deposited. The Er PL was not enhanced, however, when there was only one interface between a-Si : H and the wide gap material. In order to have a better sensitivity, we prepared a multilayer structure of the formAl_2O_3 : Er/a-Si : H/Al_2O_3 : Er/a-Si : H/Al_2O_3 : Er with around 20 nm thick a-Si : H layers sandwiched between Er-doped Al_2O_3.After annealing at 300 C, the Er PL was observed, while the threefold-stacked layer without a-Si : H la … More yer did not exhibit the Er PL after the same procedure. The observed results indicate that the thin a-Si : H layer is useful to excite Er ions which locate apart from a-Si : H. We cannot conclude at present whether Si dangling bonds in a-Si : H really play a role in enhancing the Er PL or not. Further investigations by changing the thicknesses of a-Si : H and Er-doped Al_2O_3 are needed to clarify the mechanism.We also studied on the environment of an Er ion by calculating the Stark levels due to the ligand field and by comparing the results with the PL spectra observed at 19 K. A model fo the Er environment is one that an Er ion is surrounded six oxygens which are incorporated unintentionally into a-Si : H during preparation. It should be emphasized that we did not rely on fitting parameters whose physical meaning were not clear but started with the wavefunction of the Er ion. Thus the effect of changing the distance between the Er and 0 atoms on the Stark splitting can be deduced. We conlude that the environmental model is consistent with the observed Er PL spectra. The fluctuation of the structure due to the randomness of the amorphous network is most probably the origin of the linewidth of the Er PL spectra. Less
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Environment of Er Doped in a-Si : H and Its Relation with Photoluminescence Spectra
a-Si中Er掺杂:H的环境及其与光致发光光谱的关系
DOI: --
发表时间: 2006
期刊: Mat. Res. Soc. Symp. Proc. 910
影响因子: --
作者: [Kaoru Shimamura, Nobuyuki Michiaki, Takaya Ikeda, Tetsuya Uchida, Manabu Hirao, Masao OHASHI, M.Kumeda et al.]
通讯作者: M.Kumeda et al.
Stark splitting in photoluminescence spectra of Er in a-Si : H
a-Si : H 中 Er 的光致发光光谱中的斯塔克分裂
DOI: --
发表时间: 2005
期刊: Mat. Res. Soc. Symp. Proc. 862
影响因子: --
作者: [Minoru Kumeda, Yoshitaka Sekizawa, Akiharu Morimoto, Tatsuo Shimizu, 大橋 正夫, M.Kumeda et al.]
通讯作者: M.Kumeda et al.
Stark Splitting in Photoluminescence of Er in a-Si : H
a-Si 中 Er 的光致发光中的斯塔克分裂:H
DOI: --
发表时间: 2005
期刊: Mat.Res.Soc.Symp.Proc. 862
影响因子: --
作者: [Minoru Kumeda, Yoshitaka Sekizawa, Akiharu Morimoto, Tatsuo Shimizu, 大橋 正夫, M.Kumeda et al., Masao OHASHI, M.Kumeda]
通讯作者: M.Kumeda
CONTRIBUTION OF FLOATING BONDS TO LIGHT-INDUCED DEGRADATION OF HYDROGENATED AMORPHOUS SILICON
  • 批准号:
    09650010
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 资助金额:
    $2.11万
  • 财政年份:
    1997
  • 负责人:
    KUMEDA Minoru
  • 依托单位:
海外基金