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CONTRIBUTION OF FLOATING BONDS TO LIGHT-INDUCED DEGRADATION OF HYDROGENATED AMORPHOUS SILICON

浮动键对氢化非晶硅光致降解的贡献

基本信息

批准号：
09650010
负责人：
KUMEDA Minoru
金额：
$ 2.11万
依托单位：
Kanazawa University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1998
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09650010/
关键词：
hydrogenated amorphous silicon light-induced degradation dangling bonds floating bonds randomness electron spin resonance light-induced electron spin resonance spin-lattice relaxation time 欠陥生成

项目摘要

Relation between the randomeness of amorphous network and the creation of defects was first investigated in an amorphous system of a-Ge_<1-x> C_x : H films which contains constituent atoms with largely different covalent radii, and compared the results with those in a-Ge_<1-x>Si_x, : H films which contains constituent atoms with close covalent radii. It. was found that the addition of C atoms makes the films stricture more random and increase the Ge dangling bonds per Ge atoms.Next we measured the spin-lattice relaxation time T_1 of Si dangling bonds and its dependence on the light-soaking time in a-Si : H.It was found that T_1 has a fairly good correlation with the randomness of the amorphous network estimated from the Urbach energy. It was also found that T_1's for the broad and narrow component signals of the light-induced ESR decreases by light-soaking, in contrast to that for the dark component. This might be an important clue to judge whether the origin of the broad component of the light-induced ESR comes from the floating bonds.Finally we tried to explain the defect creation processes by the light-soaking and electron-beam irradiation, using rate equations based on a model in which the floating bonds contribute to create dangling bonds.

本文首先研究了组成原子共价半径相差很大的a-Ge_<1-x> C_x: H薄膜的非晶态网络的随机性与缺陷产生的关系，并与组成原子共价半径相近的a-Ge_<1-x>Si_x，： H薄膜的结果进行了比较。它。发现C原子的加入使薄膜的结构更加随机，并增加了每个Ge原子的Ge悬空键。接下来，我们测量了Si悬空键的自旋晶格弛豫时间T_1及其与a-Si: h中光浸泡时间的关系，发现T_1与由Urbach能量估计的非晶网络的随机性有很好的相关性。光诱导ESR的宽组分和窄组分信号的T_1值比暗组分信号的T_1值降低。这可能是判断光诱导ESR的宽组分是否来源于浮动键的重要线索。最后，我们试图通过光浸泡和电子束照射来解释缺陷的产生过程，使用基于模型的速率方程，其中浮动键有助于产生悬浮键。