Effect of deposition rate on ZnO films made by an atmospheric pressure cold plasma generator

我们已经证明，利用常压低温等离子体可以制备出高质量的氧化锌薄膜，这种低温等离子体可以在露天条件下进行薄膜制备。为了加快薄膜的沉积速度，研究了狭缝结构的优化，当狭缝数目(1 mm×20 mm)从1个增加到2个时，沉积区域增大。然而，气流变得不稳定，薄膜的均匀性变差。此外，氧化锌薄膜颗粒尺寸达到40 nm或更大的沉积速度提高了约1.3倍。其次，为了在保持薄膜均匀的情况下扩大薄膜沉积区域，对锥形狭缝进行了检查。薄膜是利用气体出口一侧1.6 mm宽的锥形狭缝制成的。在这种情况下，与宽度为1 mm的狭缝相比，薄膜的沉积区宽度仅延长到约1.1倍。此外，…的沉积氧化锌薄膜的晶粒尺寸达到40 nm或更大的速度几乎没有变化。此外，利用锥形狭缝将气体出口侧的狭缝宽度扩大到3 mm，实现了薄膜的生产。在这种情况下，薄膜的沉积区宽度增加了1.9倍。此外，在所制得的薄膜中，氧化锌薄膜的颗粒尺寸在任何薄膜中的沉积速率范围内都在40 nm左右。与宽度为1 mm的狭缝相比，颗粒尺寸保持在40 nm左右的薄膜沉积速率提高了一倍以上。然而，当气体出口侧的狭缝宽度变宽时，除了所制备的薄膜中取向为(002)的晶体外，还有取向为(101)的晶体。因此，狭缝形成了锥形，从而理解了这是一种有效的加速薄膜生产的构型。此外，当需要具有良好取向性能的薄膜时，还需要进一步检查薄膜的状况等。较少

We have shown that the zinc oxide thin film of the high quality can be made by using the atmospheric pressure low temperature plasma to which the thin film preparation can be done by open air. To speed up the film deposition speed, the optimization of the slit configuration was examined.The deposition region has increased when the number of slits (1mm×20mm) is increased from one to two. However, the gas flow becomes unstable, and the uniformity of the film has worsened. Moreover, the deposition speed that the grain size of the zinc oxide thin film becomes 40nm or more has increased by a factor of about 1.3.Next, to expand the film deposition region with the uniformity of the film had been kept, the slit of the taper was examined. The thin film was made by using the slit of the taper of 1.6mm in width on the gas exit side. In this case, the width of deposition region of the thin film has extended only to about 1.1 times compared with the slit of the width of 1mm. Moreover, the depositio … More n speed that the grain size of the zinc oxide thin film becomes 40nm or more has hardly changed.In addition, film production was done by using the slit of the taper that expanded the slit width on the gas exit side up to 3mm. In this case, the width of deposition region of the thin film has increased by a factor of 1.9. In addition, the grain size of the zinc oxide thin film was about 40nm in the range at the made film, deposition rate in any film. The film deposition rate at which the grain size of 40nm was kept became twice or more compared with the slit of the width of 1mm. However, the crystal that was orientated to (101) in addition to the crystal that was orientated to (002) in the made film when the slit width on the gas exit side was widened.Therefore, the slit made a taper has understood it is a effective configuration in the speed-up of film production. Moreover, when the film with good orientation property is needed, it is necessary to examine the film condition etc. further. Less