Research of compact bright UV lamp using nitride semiconductor nano-phosphor and cold cathode

采用氮化物半导体纳米荧光粉和冷阴极的紧凑型高亮紫外灯的研究

• 批准号: 16560296
• 负责人: INOUE Yoku
• 金额: $ 2.24万
• 依托单位: Shizuoka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2004
• 资助国家: 日本
• 起止时间: 2004 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-16560296/
• 关键词: GaN nanocrystals; nano-phosohor; nanowires; carbon nanotube; UV lamp; GaN; ナノ構造; 電子線励起発

We researched deep-UV lamp which light originates from GaN nanostructures. The size of prepared GaN nano-phosphor is 200 nm in diameter. From transmission electron microscopy (TEM) observation, the nano-phospor is single crystal, and has no dislocations, which means that crystal quality is very high. The GaN nano-phosphor showed strong band-edge luminescence. The good optical properties resulted from high crystal quality of GaN nanocrystals. To shorten the emitted wavelength, AlGaN nano-phosphors were prepared. With increasing the Al content, emitted wavelength was shifted shorter region to 346 nm.As materials for cold cathode of the UV lamp, GaN nanowires and carbon nanotubes (CNT) were grown. GaN nanowires were grown by vapor-solid-liquid growth mode. The diameter and length of the GaN nanowires were 20 nm and over 5μm, respectively. Field electron emission from GaN nanowires was measured. The electron emission was observed and the turn-on field was 13 V/μm. As the growth method of CNT, we established a new CNT growth method which the formation of catalytic nano-particles and the growth of CNT were carried continuously in an identical growth chamber. Both the catalytic nano-particles and CNT were grown by thermal chemical vapor deposition. The growth of multi-walled CNT was found by TEM observation. Field emission properties of the CNT were measured. Threshold field and current density were 9 V/μm and > 100 μA/cm^2, respectively. These are good results which imply a possibility of CNT electron emitter for the UV lamp.We made a prototype of UV lamp consisting of the GaN nano-phospor and cold cathode. We obtained UV emission from the lamp. The UV lamp has a monochromatic spectrum, which a peak centered at 366 nm corresponding to the energy gap of GaN.

我们研究了源自GaN纳米结构的深紫外灯。制备的GaN纳米荧光粉尺寸为直径200 nm。从透射电子显微镜（TEM）观察，纳米荧光粉为单晶，没有位错，晶体质量非常高。 GaN纳米荧光粉表现出强的带边发光。 GaN纳米晶的良好光学性能源于其高晶体质量。为了缩短发射波长，制备了AlGaN纳米荧光粉。随着Al含量的增加，发射波长向更短的区域移动至346 nm。作为紫外灯冷阴极材料，生长了GaN纳米线和碳纳米管(CNT)。 GaN纳米线采用气-固-液生长模式生长。 GaN纳米线的直径和长度分别为20 nm和5μm以上。测量了 GaN 纳米线的场电子发射。观察到电子发射并且开启场为13V/μm。作为CNT的生长方法，我们建立了一种新的CNT生长方法，该方法在同一生长室中连续进行催化纳米颗粒的形成和CNT的生长。催化纳米颗粒和碳纳米管都是通过热化学气相沉积法生长的。通过TEM观察发现多壁CNT的生长。测量了CNT的场致发射特性。阈值场和电流密度分别为 9 V/μm 和 > 100 μA/cm^2。这些良好的结果表明CNT电子发射器用于紫外灯的可能性。我们制作了由GaN纳米荧光粉和冷阴极组成的紫外灯原型。我们获得了灯的紫外线发射。紫外灯具有单色光谱，其峰值中心位于 366 nm，对应于 GaN 的能隙。

项目成果

n3N2 compensated ZnTe films and ZnTe-ZnSe superlattices grown by hot wall epitaxy

热壁外延生长的 n3N2 补偿 ZnTe 薄膜和 ZnTe-ZnSe 超晶格

• 发表时间: 2005
• 期刊: Applied Surface Science 244
• 作者: S.Sakakibara;Y.Inoue;H.Mimura;K.Ishino;A.Ishida;H.Fujiyasu
• 通讯作者: H.Fujiyasu

電子放出素子用の針状電子放出体の製造方法及び電子放出素子の製造方法

用于电子发射装置的针状电子发射器的制造方法以及电子发射装置的制造方法

• 发表时间: 2006

Strong Cathodoluminescence from Dislocation-free GaN Nanopillar

无位错 GaN 纳米柱产生强阴极发光

• 发表时间: 2004
• 期刊: The 12th International Conferences on Solid Films and Surf aces (ICSFS-12)
• 作者: Y.Inoue;T.Hoshino;S.Takeda;K.Ishino;A.Ishida;H.Fujiyasu;H.Kominami;H.Mimura;Y.Nakanishi;S.Sakakibara;Y.Inoue 他9名;Y.Inoue 他9名;Y.Inoue 他9名;Y.Inoue 他9名
• 通讯作者: Y.Inoue 他9名

Fabrication and characterization of short period AlN/GaN quantum cascade laser structures

短周期 AlN/GaN 量子级联激光器结构的制造和表征

• 发表时间: 2004
• 期刊: Journal of Crystal Growth 265
• 作者: A.Ishida;K.Matsue;Y.Inoue;H.Fujiyasu;石田 明広;A.Ishida 他;Y.Inoue 他
• 通讯作者: Y.Inoue 他

Growth of Pillarlike GaN Nanostructures

柱状 GaN 纳米结构的生长

• 发表时间: 2005
• 期刊: Japanese Journal of Applied Physics 44
• 作者: Eisuke Tokumitsu;Masaru Senoo;Etsu Shin;Takahiro Matsumoto;大原賢治;Morimasa Okada;Makoto Tomita;Kazufumi Shiozawa;Junjie Li;Satoshi Takeda
• 通讯作者: Satoshi Takeda