Study of VV lamp using nitride semiconductor namo-phosphor and cold cathode・

我们研究了基于氮化物半导体纳米晶的新型深紫外光发光器件。我们提出了一种新的器件结构，利用纳米场电子发射器件的电子束激发GaN纳米晶体发光。本研究围绕纳米荧光粉的开发、纳米场电子发射器件的开发以及纳米荧光粉与场发射极结合的集总结构三个方面进行了研究。在蓝宝石衬底上生长了GaN纳米晶体，并通过蓝宝石衬底发射紫外光。我们研究了GaN纳米线的制备技术，用于合成大量材料的GaN纳米晶，以及开发场发射器件。阐明了纳米线的V12生长机理，并进行了详细的实验。我们发现纳米线的形貌强烈地依赖于表面Ga的扩散长度。此外，我们还开展了场发射器件材料碳纳米管的合成研究。我们开发了一种以氯化铁为催化剂合成超长碳纳米管的新工艺。在20min内实现了2 mm的高速生长。这一新的一步增长技术将有助于开发新的碳纳米管应用。这些结果表明了基于GaN纳米结构的电子轰击紫外光光源的可行性。

We studied new deep-UV light-emitting devices based on nitride semiconductor nanocrystals. We have proposed a new device structure that GaN nanocrystals emit light excited by electron beam from nanosized field electron emission device. The study has carried along with three themes of research, which are nano-phosphor development, development of nanosized field electron emission devices and the lump structure that combines the nano-phosphor and the field emitter. GaN nanocrystals were grown on sapphire substrate and emitted ultraviolet light through a sapphire substrate. We researched on GaN nanowire fabrication technology for GaN nanocrystal synthesis of large amounts of material and for the development of field-emission devices. lb clarify the V12 growth mechanisms of nanowire, detailed experiments were carried. We found that the nanowire morphology strongly depends on the surface Ga diffusion length. In addition, we conducted a study on the synthesis of carbon nanotubes (CNT) for the material of field emission device. We developed a new synthesis technology of ultra-long bulk growth of CNT employing iron chloride as a catalyst material. High-speed growth of 2-mm in 20 min has been achieved. This new one-step growth technology will contribute to the development of new CNT applications. These results indicate feasibility of electron impact UV light source based on GaN nanostructures.