Study of VV lamp using nitride semiconductor namo-phosphor and cold cathode・

研究了基于氮化半导体纳米晶体的新型深紫外发光器件。我们提出了一种由纳米场电子发射装置的电子束激发GaN纳米晶体发光的新器件结构。本研究主要围绕纳米荧光粉的研制、纳米场电子发射器件的研制以及纳米荧光粉与场发射体相结合的块状结构进行研究。在蓝宝石衬底上生长GaN纳米晶体，并通过蓝宝石衬底发射紫外光。研究了氮化镓纳米线的制备技术，可用于大量材料的氮化镓纳米晶体的合成和场发射器件的开发。为了阐明纳米线的V12生长机理，进行了详细的实验。我们发现纳米线的形貌与表面Ga扩散长度密切相关。此外，我们还进行了碳纳米管（CNT）作为场发射器件材料的合成研究。研究了一种以氯化铁为催化剂的碳纳米管超长体生长合成新工艺。在20分钟内实现了2毫米的高速生长。这种新的一步生长技术将有助于新的碳纳米管应用的发展。这些结果表明了基于GaN纳米结构的电子冲击紫外光源的可行性。

We studied new deep-UV light-emitting devices based on nitride semiconductor nanocrystals. We have proposed a new device structure that GaN nanocrystals emit light excited by electron beam from nanosized field electron emission device. The study has carried along with three themes of research, which are nano-phosphor development, development of nanosized field electron emission devices and the lump structure that combines the nano-phosphor and the field emitter. GaN nanocrystals were grown on sapphire substrate and emitted ultraviolet light through a sapphire substrate. We researched on GaN nanowire fabrication technology for GaN nanocrystal synthesis of large amounts of material and for the development of field-emission devices. lb clarify the V12 growth mechanisms of nanowire, detailed experiments were carried. We found that the nanowire morphology strongly depends on the surface Ga diffusion length. In addition, we conducted a study on the synthesis of carbon nanotubes (CNT) for the material of field emission device. We developed a new synthesis technology of ultra-long bulk growth of CNT employing iron chloride as a catalyst material. High-speed growth of 2-mm in 20 min has been achieved. This new one-step growth technology will contribute to the development of new CNT applications. These results indicate feasibility of electron impact UV light source based on GaN nanostructures.