权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Study of VV lamp using nitride semiconductor namo-phosphor and cold cathode・

使用氮化物半导体纳米荧光体和冷阴极的VV灯的研究・

基本信息

批准号：
18560333
负责人：
INOUE Yoku
金额：
$ 2.41万
依托单位：
Shizuoka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2006
资助国家：
日本
起止时间：
2006 至 2007
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18560333/
关键词：
UV light nano-phosphor GaN nanowire field electron emission device CNT ナノ蛍光

项目摘要

We studied new deep-UV light-emitting devices based on nitride semiconductor nanocrystals. We have proposed a new device structure that GaN nanocrystals emit light excited by electron beam from nanosized field electron emission device. The study has carried along with three themes of research, which are nano-phosphor development, development of nanosized field electron emission devices and the lump structure that combines the nano-phosphor and the field emitter. GaN nanocrystals were grown on sapphire substrate and emitted ultraviolet light through a sapphire substrate. We researched on GaN nanowire fabrication technology for GaN nanocrystal synthesis of large amounts of material and for the development of field-emission devices. lb clarify the V12 growth mechanisms of nanowire, detailed experiments were carried. We found that the nanowire morphology strongly depends on the surface Ga diffusion length. In addition, we conducted a study on the synthesis of carbon nanotubes (CNT) for the material of field emission device. We developed a new synthesis technology of ultra-long bulk growth of CNT employing iron chloride as a catalyst material. High-speed growth of 2-mm in 20 min has been achieved. This new one-step growth technology will contribute to the development of new CNT applications. These results indicate feasibility of electron impact UV light source based on GaN nanostructures.

我们研究了基于氮化物半导体纳米晶的新型深紫外发光器件。我们提出了一种新的器件结构，GaN纳米晶体在纳米场致电子发射器件的电子束激发下发光。本研究沿着三个主题进行，分别是奈米萤光体的开发、奈米场致电子发射元件的开发以及奈米萤光体与场致电子发射元件结合的块状结构。GaN纳米晶生长在蓝宝石衬底上，并通过蓝宝石衬底发射紫外光。我们研究了GaN纳米线的制备技术，为GaN材料的大量合成和场发射器件的开发提供了基础。为了阐明V12纳米线的生长机理，进行了详细的实验研究。我们发现，纳米线的形态强烈依赖于表面Ga扩散长度。此外，我们还对场发射器件材料碳纳米管的合成进行了研究。我们开发了一种新的合成技术，超长体生长的碳纳米管采用氯化铁作为催化剂材料。在20分钟内实现了2mm的高速生长。这种新的一步生长技术将有助于开发新的CNT应用。这些结果表明基于GaN纳米结构的电子碰撞紫外光源的可行性。