Fabrication and analysis of optical properties in spherical microcavity using nc-Si dispersed films

使用 nc-Si 分散薄膜制备球形微腔并分析光学特性

• 批准号: 17560306
• 负责人: INOKUMA Takao
• 金额: $ 2.24万
• 依托单位: Kanazawa University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2005
• 资助国家: 日本
• 起止时间: 2005 至 2006
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-17560306/
• 关键词: quantum dot; nano-materials; applied optics; microcavity; 量子コンピュータ

This research work aimed to establish a novel fabrication method of microsphere optical cavity including silicon nanocrystallites. Then their optical properties are analyzed from a viewpoint of cavity quantum electrodynamic theory with respect to an interaction between spontaneously emitted light and microcavity.Amorphous (α-)SiOx and α-SiO_2 films as bases of samples are deposited using a radio-frequency sputtering method and a thermal oxidation method, respectively. Tungsten substrates are used in order to ensure heat resistance. The thickness of the films were 5μm. The sputtering target was SiO_2 disc with Si tips on it. The composition of the films deposited was controlled by varying the number of Si tips. An electron-beam drawing system was used for microfabrication of the films into island-like patterns. Circular patterns of chromium with 0.5-20μm in diameter were formed on the film by a lift-off process. The film was then etched by CF_4-plasma reactive ion etching. The columner patterns fabricated were checked by scanning electron microscope. Those columner islands of SiOx fims were heated up to around softening point, that is, 1200-1600℃. The samples inserted in a Mo cell were in an atmosphere of Ar gas flow in order to avoid oxidation. The optimal condition of heating was 2 minutes at 1600℃. Under this condition, the columner islands were successfully deformed into hemispherical shapes. However, analysis of their optical properties was difficult at that point in time.

本研究旨在建立一种新颖的含硅纳米晶微球光学谐振腔的制备方法。然后从自发辐射光与微腔相互作用的腔量子电动力学理论的角度分析了它们的光学性质，并分别采用射频溅射法和热氧化法制备了非晶（α-）SiOx和α-SiO_2薄膜作为样品的基底。使用钨基板是为了确保耐热性。薄膜厚度为5μm。溅射靶为SiO_2圆盘，其上有Si针尖，通过改变Si针尖的数目来控制薄膜的成分。一个电子束绘图系统用于微加工成岛状图案的膜。用剥离法在膜上形成了直径为0.5 ~ 20μm的圆形铬图形。然后用CF_4等离子体反应离子刻蚀法刻蚀薄膜。用扫描电子显微镜对制备的柱状图案进行了检查。将这些柱状岛状的SiOx薄膜加热到软化点附近，即1200-1600℃。插入Mo电池中的样品处于Ar气流的气氛中以避免氧化。最佳加热条件为1600℃加热2 min。在此条件下，柱状岛被成功地变形为半球形。然而，当时很难分析它们的光学性质。

项目成果

Roles of SiH4 and SiF4 in growth and structural changes of poly-Si films

SiH4和SiF4在多晶硅薄膜生长和结构变化中的作用

• 发表时间: 2006
• 期刊: Surface Science Vol. 600
• 作者: Azadeh Haddad Adel;Takao Inokuma;Yoshihiro Kurata;Seiichi Hasegawa
• 通讯作者: Seiichi Hasegawa

Roles of SiH_4 and SiF_4 in growth and structural changes of poly-Si films

SiH_4和SiF_4在多晶硅薄膜生长和结构变化中的作用

• 发表时间: 2006
• 期刊: Surface Science 600
• 作者: Azadeh Haddad Adel;Takao Inokuma;Yoshihiro Kurata;Seiichi Hasegawa;A.H.Adel
• 通讯作者: A.H.Adel

Structural and photo-luminescence properties of nanocrystalline silicon films deposited at low temperature by plasma-enhanced chemical vapor deposition

• DOI: 10.1016/j.apsusc.2006.01.064
• 发表时间: 2006-11
• 期刊: Applied Surface Science
• 影响因子: 6.7
• 作者: A. Ali;T. Inokuma;S. Hasegawa

Roles of SiH_4 and SiF_4 in growth and structural changes of poly-Sifilms

SiH_4和SiF_4在多晶硅薄膜生长和结构变化中的作用

• 发表时间: 2006
• 期刊: Surface Science 600
• 作者: T.;Uendo;H.;Yamazaki;S.;Narita;T.;Momma;Y.;Saito;加島 篤;A.Kajima;加島 篤;A.Kajima;A.M.Ali;A.H.Adel
• 通讯作者: A.H.Adel

Characterization of Structure and role of different textures in polycrystalline Si films

多晶硅薄膜中不同织构的结构表征和作用

• 发表时间: 2005
• 期刊: Journal of Non-crystalline Solids 351
• 作者: Azadeh Haddad Adel;Takao Inokuma;Yoshihiro Kurata;Seiichi Hasegawa;A.H.Adel;A.H.Adel
• 通讯作者: A.H.Adel