Mask-less lithography by individual control of ultra-violet light emitting diode array

本研究的最终目的是实现低成本、高通量的小型无掩膜曝光系统。为此，我们提出了一种新的方法，即对二维排列的紫外发光二极管（LED）阵列分别进行控制。在2005 ~ 2006财年的研究中，我们的目标是通过单独控制紫外线led来尝试简单的光刻测试。作为第一步，我们研究了如何形成紫外线led。为了低成本形成紫外led，我们计划制作多晶异质结结构，包括紫外发光层（ZnO）、电子注入层（SnO_2）和空穴注入层（NiO）。我们想强调的是，在硅或玻璃衬底上形成异质结是一种新的、重要的低成本发光器件的方法，因为通过分子束外延在晶格匹配衬底上外延生长是一种昂贵的方法，即使已经形成了高质量的发光器件。沿着这条线，我们使用简单的蒸发和溅射来形成这些层。我们在各种条件下通过蒸发和溅射形成了这些层。结果表明，ZnO层在室温下在380nm处出现阴极发光峰。为此，我们通过安装光纤和单色器，将扫描电镜改为阴极发光系统。在SnO_2的情况下，我们形成了高质量的层，其电导率为0.001Ωcm （n型），透过率为90%，带隙为~ 4eV。作为p型宽带隙材料，我们已经形成了NiO层，其电导率为0.3 Ωcm （p型），透过率为40-50%，带隙为~ 4eV。近年来，高质量p型宽禁带材料的开发受到了世界各国的广泛关注，具有广泛的应用前景。由于我们的NiO层数据显示出良好的价值，我们计划在会议上发表并提交给期刊。如上所述，我们研究了用于紫外led的宽禁带材料，旨在开发具有低成本和高吞吐量的小型无掩膜曝光系统。在不久的将来，我们希望通过进一步提高这些材料的质量来完成紫外线led。少

Final purpose of this research is to realize small mask-less exposure systems with low cost and high throughput. For the purpose, we have proposed a new method, in which two dimensionally aligned ultra-violet light emitting diode (LED) array should be controlled inc ividually. In this research during the fiscal years of 2005〜2006, our target is to try simple tests of lithography by controlling the ultra-violet LEDs individually.As a first step, we have investigated how to form the ultra-violet LEDs. To form ultra-violet LEDs at low cost, we have planned making of poly-crystal hetero-junction structures, which includes ultra-violet light emitting layer (ZnO), electron injection layer (SnO_2), and hole injection layer (NiO). We would like to emphasize that formation of the hetero-junction with poly-crystal materials is a new and important approach for low-cost light-emitters on silicon or glass substrates, because epitaxial growth on lattice-matched substrates by moleculer beam epitaxy i … More s an expensive method even though high quality light emitters have been formed. Along this line, we used simple evaporation and sputtering to form those layers.We have formed those layers at various conditions by evaporation and sputtering. As a result, ZnO layers showed cathode luminescence peak at 380nm at room temperature. For this measurement, we have changed our scanning electron microscope into cathode luminescence system by installing an optical fiber and monochromator. In case of SnO_2, we have formed high quality layers, which showed conductivity of 0.001Ωcm (n-type), transmittance of 90%, and bandgap of〜4eV. As a p-type wide bandgap material, we have formed of NiO layers, which showed conductivity of 0.3 Ωcm (p-type), transmittance of 40-50%, and bandgap of〜4eV. Recently, development of high-quality p-type wide bandgap material is intensively studied in the world because many applications are expected. Since our data of the NiO layers shows good values, we are planning to have presentation in a conference and submission to a journal.As discuss above, we have studied wide bandgap materials for ultra-violet LEDs, which is aimed to develop small mask-less exposure systems with low cost and high throughput. In near future, we would like to complete ultra-violet LEDs by more improving quality of those materials. Less