Mask-less lithography by individual control of ultra-violet light emitting diode array

通过单独控制紫外发光二极管阵列进行无掩模光刻

• 批准号: 17560312
• 负责人: NAKAMURA Yusui
• 金额: $ 2.3万
• 依托单位: Kumamoto University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2005
• 资助国家: 日本
• 起止时间: 2005 至 2006
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-17560312/
• 关键词: Crystal growth; Optical source technology; Electronic devices and systems; Semiconductor properties

Final purpose of this research is to realize small mask-less exposure systems with low cost and high throughput. For the purpose, we have proposed a new method, in which two dimensionally aligned ultra-violet light emitting diode (LED) array should be controlled inc ividually. In this research during the fiscal years of 2005〜2006, our target is to try simple tests of lithography by controlling the ultra-violet LEDs individually.As a first step, we have investigated how to form the ultra-violet LEDs. To form ultra-violet LEDs at low cost, we have planned making of poly-crystal hetero-junction structures, which includes ultra-violet light emitting layer (ZnO), electron injection layer (SnO_2), and hole injection layer (NiO). We would like to emphasize that formation of the hetero-junction with poly-crystal materials is a new and important approach for low-cost light-emitters on silicon or glass substrates, because epitaxial growth on lattice-matched substrates by moleculer beam epitaxy i … More s an expensive method even though high quality light emitters have been formed. Along this line, we used simple evaporation and sputtering to form those layers.We have formed those layers at various conditions by evaporation and sputtering. As a result, ZnO layers showed cathode luminescence peak at 380nm at room temperature. For this measurement, we have changed our scanning electron microscope into cathode luminescence system by installing an optical fiber and monochromator. In case of SnO_2, we have formed high quality layers, which showed conductivity of 0.001Ωcm (n-type), transmittance of 90%, and bandgap of〜4eV. As a p-type wide bandgap material, we have formed of NiO layers, which showed conductivity of 0.3 Ωcm (p-type), transmittance of 40-50%, and bandgap of〜4eV. Recently, development of high-quality p-type wide bandgap material is intensively studied in the world because many applications are expected. Since our data of the NiO layers shows good values, we are planning to have presentation in a conference and submission to a journal.As discuss above, we have studied wide bandgap materials for ultra-violet LEDs, which is aimed to develop small mask-less exposure systems with low cost and high throughput. In near future, we would like to complete ultra-violet LEDs by more improving quality of those materials. Less

本研究的最终目的是实现低成本、高产量的小型无掩模曝光系统。为此，我们提出了一种新的方法，其中二维排列的紫外发光二极管（LED）阵列，应单独控制。在2005 ~ 2006年度的研究中，我们的目标是通过单独控制紫外LED来尝试简单的光刻测试。作为第一步，我们研究了如何形成紫外LED。为了以低成本形成紫外LED，我们计划制作多晶异质结结构，其包括紫外发光层（ZnO）、电子注入层（SnO_2）和空穴注入层（NiO）。我们想强调的是，用多晶材料形成异质结是在硅或玻璃衬底上低成本发光体的一种新的重要方法，因为用分子束外延在晶格匹配衬底上外延生长是一种非常有效的方法。 ...更多信息 尽管已经形成了高质量的光发射器，但这是一种昂贵的方法。沿着这条路线，我们使用简单的蒸发和溅射来形成这些层。我们已经通过蒸发和溅射在各种条件下形成了这些层。结果表明，ZnO薄膜在室温下具有380 nm的阴极发光峰。为此，我们通过安装光纤和单色器将扫描电子显微镜改为阴极发光系统。在SnO_2的情况下，我们已经形成了高质量的层，其显示出0.001Ωcm（n型）的电导率，90%的透射率，和1.4eV的带隙。作为p型宽带隙材料，我们已经形成了NiO层，其表现出0.3 Ωcm（p型）的电导率，40- 50%的透射率，以及104 eV的带隙。近年来，国际上对高质量p型宽带隙材料的开发进行了深入研究，因为它具有广泛的应用前景。由于我们的NiO层的数据显示出良好的价值，我们计划在会议上发表并提交给期刊。如上所述，我们研究了用于紫外LED的宽带隙材料，旨在开发低成本和高产量的小型无掩模曝光系统。在不久的将来，我们希望通过进一步提高这些材料的质量来完成紫外线LED。少