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Photoemission studies of magnetic semiconductors

Photoemission studies of magnetic semiconductors
磁性半导体的光电发射研究
批准号:
14076209
负责人:
FUJIMORI Atsushi
金额:
$12.48万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research on Priority Areas
财政年份:
2002
资助国家:
日本
项目状态:
已结题
起止时间:
2002 至 2005

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中文摘要
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英文摘要
* Soft x-ray absorption (XAS) and soft x-ray magnetic circular dichroism (XMCD) studies at the Co 2p core absorption edges of Zn1-xCoxO (x=0.05) prepared by the pulsed laser deposition (PLD) method were performed and the obtained spectra were analyzed using cluster-model calculations. We have found that the temperature and the magnetic field dependences of the XMCD intensity were very different from non-interacting Co ions and that ferromagnetic and antiferromagnetic interactions between the Co ions coexist inhomogeneously.* XAS and resonance photoemission studies at the Mn 2p core absorption edges of Ga1-xMnxN prepared by the molecular-beam epitaxy (MBE) method were performed, and the obtained spectra were analyzed using cluster-model calculations. We found that the valence of the Mn ion was 2+ and that the Mn 3d states were largely distributed within the valence band of the GaN host. Acceptor levels formed by the Mn doping above the valence-band maximum Mn were found to be occupied b … More y electrons, indicating that the high-temperature ferromagnetism predicted by theory was nor realized because of the compensation effect.* XAS, XMCD and resonance photoemission studies were performed at the Cr 2p core absorption edges of Ga1-xCrxN (x=0.015). The Cr 2p XAS spectra indicated that the Cr was in the 3+ valence state. The Cr 3d partial density of states (PDOS) were largely distributed within the band gap of GaN, in striking contrast with Ga1-xMnxN. The Cr 3d PDOS was found to be suppressed at the Fermi level, and no Fermi-edge feature as predicted by band-structure calculations was observed.* XAS and XMCD measurements were made on Zn1-xVxO (x=0.05) which exhibited weak ferromagentism. The V ions substituting Zn2+ were found to be responsible for the magnetic properties. From comparison of the XMCD spectra with the magnetic susceptibility, we found that 10% of V ions were paramagnetic and 90 % were strongly coupled with each other antiferromagnetically. Furthermore, the paramagnetic V ions were found to be influenced by the axial crystal field of the hexagonal ZnO host. Less
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DOI: --
发表时间: 2005
期刊: J. Electron Spectrosc. Relat. Phenom. 144-147
影响因子: --
作者: [A.Fujimori, J.Okabayashi, Y.Takeda, T.Mizokawa, J.Okamoto, K.Mamiya, Y.Saitoh, Y.Muramatsu, M.Oshima, S.Ohya, M.Tanaka]
通讯作者: M.Tanaka
Photoemission and Core-Level Magnetic Circular Dichroism Studies of Diluted Magnetic Semiconductors
稀磁半导体的光电发射和核心级磁圆二色性研究
DOI: --
发表时间: 2005
期刊: J. Electron Spectrosc. Relat. Phenom 144-147
影响因子: --
作者: [A.Fujimori, J.Okabayashi, Y.Takeda, T.Mizokawa, J.Okamoto, K.Mamiya, Y.Saitoh, Y.Muramatsu, M.Oshima, S.Ohya, M.Tanaka]
通讯作者: M.Tanaka
Novel Spingtronic Materials Based on Ferromagnetic Semiconductor Chalcopyrites
基于铁磁半导体黄铜矿的新型自旋电子材料
DOI: --
发表时间: 2004
期刊: Interntl. J. Nanoscience 3
影响因子: --
作者: [G.A.Medvedkin, S.I.Goloshchapov, V.G.Voevodin, K.Sato, T.Ishibashi, S.Mitani, K.Takanashi, A.Fujimori, Y.Ishida, J.Okabayashi, D.D.Sarma]
通讯作者: D.D.Sarma
DOI: 10.1103/physrevb.72.201201
发表时间: 2005-05
期刊: Physical Review B
影响因子: 3.7
作者: [M. Kobayashi;Y. Ishida;J. Hwang;T. Mizokawa;A. Fujimori;K. Mamiya;J. Okamoto;Y. Takeda;T. Okane;Y. Saitoh;Y. Muramatsu;A. Tanaka;H. Saeki;H. Tabata;T. Kawai]
通讯作者: M. Kobayashi;Y. Ishida;J. Hwang;T. Mizokawa;A. Fujimori;K. Mamiya;J. Okamoto;Y. Takeda;T. Okane;Y. Saitoh;Y. Muramatsu;A. Tanaka;H. Saeki;H. Tabata;T. Kawai
35
    Novel electronic phases at interfaces of strongly correlated materials studied by soft x-ray dichroism with multi-degrees of freedom
    • 批准号:
      22224005
    • 项目类别:
      Grant-in-Aid for Scientific Research (S)
    • 资助金额:
      $134.45万
    • 财政年份:
      2010
    • 负责人:
      FUJIMORI Atsushi
    • 依托单位:
    Adevebpment of flight control systems for an autonomous small helicopter
    • 批准号:
      18560757
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $1.93万
    • 财政年份:
      2006
    • 负责人:
      FUJIMORI Atsushi
    • 依托单位:
    Physic and Chemistry of Oxygen Holes : Phase Transitions and Dynamics in High-Valence Transition-Metal Oxides
    • 批准号:
      12304018
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $30.28万
    • 财政年份:
      2000
    • 负责人:
      FUJIMORI Atsushi
    • 依托单位:
    海外基金