Towards Photonic and Electronic Devices for High Indium Content Nitride Semiconductors

面向高铟含量氮化物半导体的光子和电子器件

• 批准号: DP0556391
• 负责人: Dr Kenneth Butcher
• 金额: $ 25.53万
• 依托单位: Macquarie University
• 依托单位国家: 澳大利亚
• 项目类别: Discovery Projects
• 财政年份: 2005
• 资助国家: 澳大利亚
• 起止时间: 2005-01-01 至 2008-12-31
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/DP0556391
• 关键词: Towards; Photonic; Electronic; Devices; Indium

Nitride semiconductors are widely used in mobile phone and lighting applications. The Low Temperature Nitride Semiconductor Group at Macquarie University have specialized in improving the quality of these materials using growth techniques that will allow gallium nitride to become commercially viable for room lighting. In collaboration with researchers in Europe we intend to develop and exploit the next generation of nitride materials for high-speed mobile communications and photonic applications. The team assembled for this project have excellent credentials in the development of these materials and, importantly, an excellent ability to probe and understand material phenomena.

氮化物半导体广泛用于移动的电话和照明应用中。麦考瑞大学的低温氮化物半导体小组专门研究使用生长技术来提高这些材料的质量，这将使氮化镓在室内照明中变得商业可行。通过与欧洲的研究人员合作，我们打算开发和利用下一代氮化物材料，用于高速移动的通信和光子应用。为这个项目组建的团队在这些材料的开发方面有着出色的资历，重要的是，他们有着出色的探测和理解材料现象的能力。