Foundation of MgB2 superconducting junction technology
Foundation of MgB2 superconducting junction technology
批准号:
18080003
负责人:
NAITO Michio
金额:
$34.75万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research on Priority Areas
财政年份:
2006
资助国家:
日本
项目状态:
已结题
起止时间:
2006 至 2009
中文摘要
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英文摘要
It has been predicted that the global helium resources will beexhausted in the 21st century. In the end of the 21st century, all of currentsuperconducting electronics applications relying on niobium (Tc ~ 9 K) will be ended. Thisresearch project has been performed to develop the Josephson junction fabricationtechnology using recently discovered MgB2 with Tc = 40 K, aiming at establishing thefoundation of superconducting electronics with MgB2 operating above 20 K (hydrogenboiling temperature) as “post-niobium" superconducting electronics. In this project, thegrowth techniques of high-quality MgB2 films have been developed either bylow-temperature molecular beam epitaxy or by high-temperature chemical vapordeposition. The fabrication of all MgB2 Josephson junctions has also been attemptedusing various barrier materials.
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Grain boundary weak link in a-b plane in MgB2 film
MgB2薄膜中a-b平面的晶界薄弱环节
DOI:
--
发表时间:
2006
期刊:
Appl. Phys. Lett. 89
影响因子:
--
作者:
[E. Stepantsov, M. Tarasov, M. Naito, A. Tsukada, D. Winkler]
通讯作者:
D. Winkler
MgB_2 thin film growth by modified hybrid physical chemical deposition with a pocket heater
利用袖珍加热器改进混合物理化学沉积法生长 MgB_2 薄膜
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[沢木勇人, ら]
通讯作者:
ら
分子線エピタキシー法によるAlB_2/MgB_2積層構造の作製
分子束外延法制备AlB_2/MgB_2叠层结构
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[石井林太郎, 新原佳紘, 内藤方夫]
通讯作者:
内藤方夫
MgB_2薄膜・接合作製の現状とデバイス応用への展望
MgB_2薄膜/结制备现状及器件应用前景
DOI:
--
发表时间:
2006
期刊:
低温工学 41巻
影响因子:
--
作者:
[E. Stepantsov, M. Tarasov, M. Naito, A. Tsukada, D. Winkler, 河合宣彰, K. Churei, 生田浩康, 内藤方夫]
通讯作者:
内藤方夫
ポケットヒーターを用いた改良型物理化学混合気相成長法によるMgB2薄膜の成長
使用袖珍加热器改进物理化学混合气相生长法生长 MgB2 薄膜
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[沢木勇人, 内藤方夫]
通讯作者:
内藤方夫
共 31 条
Renaissance of high-Tc superconductivity - Undoped cuprates are a Mott insulator?
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批准号:23340098
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$12.65万
-
财政年份:2011
-
负责人:NAITO Michio
-
依托单位:
Rigorous test of electron-hole symmetry for high- Tc superconductivity using epitaxial thin films
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批准号:18340098
-
项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$11.09万
-
财政年份:2006
-
负责人:NAITO Michio
-
依托单位: