课题基金 / 基金详情

Rigorous test of electron-hole symmetry for high- Tc superconductivity using epitaxial thin films

Rigorous test of electron-hole symmetry for high- Tc superconductivity using epitaxial thin films
使用外延薄膜严格测试高温超导的电子-空穴对称性
批准号:
18340098
负责人:
NAITO Michio
金额:
$11.09万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2006
资助国家:
日本
项目状态:
已结题
起止时间:
2006 至 2007

项目摘要

项目成果

NAITO Michio的其他基金

相似基金

相关文献

中文摘要
翻译
点击翻译按钮获取中文摘要
英文摘要
The playground for high-T_c superconductivity is the CuO_2 plane common to both p- and n-type high-T_c superconductivity, and the electronic phase diagram of high-T_c cuprates is roughly symmetric between p- and n-type doping. Hence, it has been claimed that "electron-hole" symmetry holds for high-T_c superconductivity. Based on this claim, the doped Mott insulator scenario has been widely accepted, in which the parent material is a Mott insulator (anti-ferromagnetic insulator) and high-T_c superconductivity develops when the insulator is exposed to either p- or n-type doping. However, it should be borne in mind that electron-hole symmetry is far from obvious and even surprising. Since the mother compounds of high- T_c superconductors can be regarded as charge-transfer insulators, doped holes go on the oxygen sites but doped electrons go on the Cu sites, which should result in doped carriers with quite different natures. Furthermore it must be emphasized that the argument for the above … More "electron-hole" symmetry is based on a comparison of p- and n-type doping in different structures, namely, hole doping in the K_2NiF_4 (T) structure and electron doping in the Nd_2CuO_4 (T) structure.In principle, it is desirable to compare hole and electron doping in the same crystal structure. However, such a comparison has not yet been undertaken because it is empirically known in bulk synthesis that hole doping is possible only in octahedral (CuO_6) or pyramidal (CuO_5) cuprates whereas electron doping is possible only in square-planar (CuO_4) cuprates. For example, electron doping in the T structure or hole doping in the T' structure has never been achieved in bulk synthesis. However, in this project we report that Ce can be incorporated into the K_2NiF_4 lattice [T-La_2CuO_4 (LCO)] by employing a low-temperature synthetic route with molecular beam epitaxy (MBE) and that Sr/Ca can be incorporated into the Nd_2CuO_4 lattice by employing a low-temperature synthetic route with metal organic deposition (MOD). The former results revealed that Ce doping makes T-LCO more insulating, which is in sharp contrast to Sr (or Ba) doping in T-LCO, which makes the compound metallic and superconducting. The observed smooth increase in resistivity from the hole-doped side to the electron-doped side indicates that the electron-hole symmetry is broken in the T-phase materials. The latter result revealed that T'-RE_2CuO_4 can be superconducting even with no doping and that hole doping increases T whereas electron doping decreases T_c. Electron-hole symmetry is also broken in the T'-phase materials. Both of the results throw strong skepticism on the currently accepted "doped Mott-insulator scenario" on high- T_c superconductivity. Less
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
DOI: 10.1103/physrevb.77.060505
发表时间: 2008-02-01
期刊: PHYSICAL REVIEW B
影响因子: 3.7
作者: [Krockenberger, Y., Kurian, J., Alff, L.]
通讯作者: Alff, L.
Superconductivity phase diagram for the electron-doped cuprates R_<2-x>Ce_xCuO_4(R=La,Pr,Nd,Sm,and Eu)
电子掺杂铜酸盐R_<2-x>Ce_xCuO_4(R=La,Pr,Nd,Sm,and Eu)的超导相图
DOI: --
发表时间: 2008
期刊: Physical Review B 77
影响因子: --
作者: [Y. Krockenberger, et. al.]
通讯作者: et. al.
Superconductivity in undoped cuprate T'-RE_2CuO_4
未掺杂铜酸盐 T-RE_2CuO_4 的超导性
DOI: --
发表时间: 2008
期刊:
影响因子: --
作者: [O., Matsumoto, et. al.]
通讯作者: et. al.
DOI: 10.1016/j.jpcs.2006.05.012
发表时间: 2006-09
期刊: Journal of Physics and Chemistry of Solids
影响因子: 4
作者: [H. Oyanagi;N. Saini;A. Tsukada;M. Naito]
通讯作者: H. Oyanagi;N. Saini;A. Tsukada;M. Naito
32
    Renaissance of high-Tc superconductivity - Undoped cuprates are a Mott insulator?
    Foundation of MgB2 superconducting junction technology
    • 批准号:
      18080003
    • 项目类别:
      Grant-in-Aid for Scientific Research on Priority Areas
    • 资助金额:
      $34.75万
    • 财政年份:
      2006
    • 负责人:
      NAITO Michio
    • 依托单位:
    海外基金