Establishment of anisotropy control method of the magnetostrictive thin film using stress induced by difference in thermal expansion and their application for highly sensitive strain sensor.

利用热膨胀差异引起的应力的磁致伸缩薄膜各向异性控制方法的建立及其在高灵敏应变传感器中的应用。

• 批准号: 24656250
• 负责人: HASHI Shuichiro
• 金额: $ 2.58万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Challenging Exploratory Research
• 财政年份: 2012
• 资助国家: 日本
• 起止时间: 2012-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-24656250/
• 关键词: アモルファス磁歪薄膜; 磁気異方性; 逆磁歪効果; 歪センサ

In this study, for a soft magnetostrictive thin film (FeSiB), uniaxial anisotropy control method using a difference of thermal expansion coefficients of layered structure composed of other nonmagnetic film (Mo) was studied for realizing high sensitive strain sensor. When the film is subjected to annealing to release a residual stress, the differences of the thermal expansion coefficient of the magnetic film and nonmagnetic film produce an inner stress to each other. The inner stress can induce anisotropy of the magnetic film to arbitrary direction due to the inverse magnetostriction effect.It is found that the uniaxial anisotropy is induced to width direction of the rectangular Mo layer. In addition, it was observed that as the major axis of the rectangular Mo under layer was lengthened, the in-plane uniaxial anisotropy of the FeSiB film was gradually strengthened. Furthermore, the anisotropy of FeSiB induced radially of a ring shape sample using this method was observed.

在这项研究中，对于软磁致伸缩薄膜（FeSiB），单轴各向异性的控制方法，使用的热膨胀系数的差异组成的其他磁致伸缩膜（Mo）的层状结构进行了研究，以实现高灵敏度的应变传感器。当对薄膜进行退火以释放残余应力时，磁性薄膜和非磁性薄膜的热膨胀系数的差异彼此产生内应力。由于逆磁致伸缩效应，内应力可以诱导磁性薄膜沿任意方向的各向异性，发现矩形Mo层沿宽度方向诱导单轴各向异性。此外，观察到随着矩形Mo底层的长轴的延长，FeSiB膜的面内单轴各向异性逐渐增强。此外，利用该方法还观察到了FeSiB在环形样品中径向诱导的各向异性。

项目成果

A Basic Study of Magnetic Anisotropy Strength Control Using FeSiB Magnetostrictive Thin Film

FeSiB磁致伸缩薄膜磁各向异性强度控制的基础研究

• 发表时间: 2012
• 作者: J. W. Shin;G. Kitazawa;S. H. Kim;S. Hashi;K. Ishiyama
• 通讯作者: K. Ishiyama

Analysis of Thin-Film MI sensor using the Variations in Impedance and the Magnetic Domain Structure

利用阻抗变化和磁域结构分析薄膜 MI 传感器

• DOI: 10.1063/1.4863163
• 发表时间: 2014
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: J. W. Shin;Y. Miwa;S. H. Kim;S.Hashi;K. Ishiyama
• 通讯作者: K. Ishiyama

Arbitrary Anisotropy Control Of Magnetstrictive Film Using Non Magnetic Laminated Layer

利用非磁性叠层的磁致伸缩薄膜的任意各向异性控制

• 作者: Shuichiro Hashi;Yasuaki Miwa;Genki Kitazawa;Jae Won Shin;Shigeto Agatsuma;Kazushi Ishiyama
• 通讯作者: Kazushi Ishiyama

熱膨張係数差を利用した磁歪膜の磁気異方性誘導に関する検討

利用热膨胀系数差异研究磁致伸缩薄膜中的磁各向异性感应

• 发表时间: 2013
• 作者: 三輪泰之;北澤厳己;申在原;枦修一郎;石山和志
• 通讯作者: 石山和志

Anisotropy control method for magnetostrictive film considering thermal expansion coefficient and inverse magnetostriction effect

考虑热膨胀系数和逆磁致伸缩效应的磁致伸缩薄膜各向异性控制方法

• 发表时间: 2012
• 作者: S. Hashi;G. Kitazawa;J. W. Shin;K. Ishiyama
• 通讯作者: K. Ishiyama