Removal of phosphorus and boron from molten silicon

熔融硅中除磷和硼

• 批准号: 21246115
• 负责人: MAEDA Masafumi
• 金额: $ 28.95万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-21246115/
• 关键词: 高純度化; 太陽電池; シリコン

A process to remove phosphorus and boron from molten silicon was studied in order to produce solar-grade silicon at lower energy cost. Oxygen and water vapor were injected into silicon melted with electron beam under high vacuum. Evaporative removal of phosphorus was enhanced by injection of the reactive gases, and evaporation of oxidized boron was also indicated. The mechanism of the reactions was studied by development of a double Knudsen cell mass spectrometer equipped with a gas-injection apparatus. Evaporated species from Si-P alloys and boron were identified and evaluated quantitatively.

为了以较低的能耗生产太阳能级硅，研究了一种从熔融硅中去除磷和硼的工艺。在高真空下，向电子束熔化的硅中注入氧气和水蒸气。反应气体的注入增强了磷的蒸发去除，并且还指示了氧化硼的蒸发。反应的机理进行了研究，通过开发的双克努森池质谱仪配备了气体注射装置。从硅磷合金和硼蒸发物种进行了鉴定和定量评估。

项目成果

シリコンからの脱 リン のための熱力 学

硅脱磷热力学

• 发表时间: 2011
• 作者: 永井崇;前田正史
• 通讯作者: 前田正史

シリコンからの脱リンのための熱力学

硅脱磷热力学

• 发表时间: 2013
• 作者: 永井崇;山下智司;前田正史
• 通讯作者: 前田正史

Removal Rate of Phosphorus from Molten Silicon

• DOI: 10.1515/htmp.2011.002
• 发表时间: 2011
• 作者: T. Kemmotsu;T. Nagai;M. Maeda

Removal of Phosphorus from Molten Silicon by Electron Beam Melting Technique

电子束熔炼技术从熔融硅中除磷

• 发表时间: 2011
• 作者: N.Hirota;T.Ando;R.Tanaka;H.Wada;Y.Sakka;乾晴行;Takashi Nagai and Masafumi Maeda
• 通讯作者: Takashi Nagai and Masafumi Maeda

溶融シリコンからの不純物除去

去除熔融硅中的杂质

• 发表时间: 2010
• 作者: 景山友喜;永井 崇;木村久雄;前田正史
• 通讯作者: 前田正史