Direct production process of low cost solar-grade silicon feedstock for multi-crystalline solar cells
Direct production process of low cost solar-grade silicon feedstock for multi-crystalline solar cells
批准号:
07505021
负责人:
MAEDA Masafumi
金额:
$8.06万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
1995
资助国家:
日本
项目状态:
已结题
起止时间:
1995 至 1996
中文摘要
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英文摘要
In this study, the new process was developed for low cost silicon feed stock for multi-crystalline solar cells. Low cost metallurgical-grade silicon (MG-Si) was the raw material for the process. Modified electron beam (EB) and plasma arc (PA) remelting techniqued were applied for the elimination of impurities. Continuous solidification was employed to remove transition metals.Button melting techniquePlasma arc of Ar-H_2O mixture was applied to eliminate boron by forming boron oxide or hydroxide vapor. Boron content reached about 1ppmw within 3.6 K seconds at 0.19 to 0.39vol. %H_2O.When H_2O content was increased to 1.24vol. % boron content was lowered to below 1 ppm within 900sec.The impurities such as carbon, phosphorus, calcium and aluminum in MG-Si were removed by EB treatment under 10^<-2> Pa for thirty minutes. Ninety percent of carbon was eliminated and the content reduced to 15ppmw, 75% of aluminum was eliminated and the content decreased to 470ppmw, 89% of calcium was removed and the content decreased to 150ppmw, and 93% of phosphorus was removed and the content decreased to 3ppmw at 5.0kW.Unidirectional continuous casting of siliconContinuous casting of silicon in the vacuum was performed. Transition metals such as iron and titanium were removed by segregation. The iron content leached to less than 1/30 for the ingot length of more than 50% of the ingot height at the casting rates of 2mm/min. This method will be one of the silicon source for solar grade silicon.
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T.Ikeda and M.Maeda: "Elimination of Boron in Molten Silicon by Reactive Rotating Plasma Arc" Materials Transactions,JIM. (1996)
T.Ikeda 和 M.Maeda:“通过反应旋转等离子弧消除熔融硅中的硼”Materials Transactions,JIM。
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T.Ikeda,H.Iwasa,N.Mori and M.Maeda: "Imprities distrbution and growth structure of cast silicon by continuous solidification with a copper mold" 14th European Photovoltaic Solar Energy Conference. (発表予定).
T.Ikeda、H.Iwasa、N.Mori 和 M.Maeda:“通过铜模具连续凝固铸造硅的杂质分布和生长结构”第 14 届欧洲光伏太阳能会议(待提交)。
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Takashi Ikeda, M.Maeda: "Removal of Boron in metallurgical-grade Silicon by the Rotating Plasma Arc" 13th European Photovoltaic Solar Energy Conference. POZA.22 (1995)
Takashi Ikeda、M.Maeda:“通过旋转等离子弧去除冶金级硅中的硼”第 13 届欧洲光伏太阳能会议。
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T.Ikeda and M.Maeda: "Elmination of Boron in Molter Silicon by Reactive Rotating Plasma Arc" Materials Transactions,JIM. 37. 983-987 (1996)
T.Ikeda 和 M.Maeda:“通过反应旋转等离子弧消除熔融硅中的硼”材料交易,JIM。
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T.Ikeda and M.Maeda: "Removal of Boron in Metallurgical-grade Silicon by Rotating Plasma Arc" 13^<th> European Photovoltaic solar Energy Conference, Niece, France. 454-457 (1995)
T.Ikeda 和 M.Maeda:“通过旋转等离子弧去除冶金级硅中的硼”第 13 届欧洲光伏太阳能会议,法国内采。
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共 12 条
Microstructure control of metal-oxide composite materials by internal oxidation and its application to new materials processing
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$10.98万
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财政年份:2016
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负责人:MAEDA Masafumi
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依托单位:
Removal of phosphorus and boron from molten silicon
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财政年份:2003
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负责人:MAEDA Masafumi
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依托单位:
Development of a new precess for titanium production
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批准号:03555142
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Evaluation of Gas Temperature by Infrared Spectroscopy
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财政年份:1988
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负责人:MAEDA Masafumi
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依托单位:
国内基金
海外基金
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批准号:20802044
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