Synthesis of high purity hBN crystals and realization for their new functions
Synthesis of high purity hBN crystals and realization for their new functions
批准号:
23246116
负责人:
TANIGUCHI Takashi
金额:
$31.7万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2011
资助国家:
日本
项目状态:
已结题
起止时间:
2011-04-01 至 2014-03-31
中文摘要
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英文摘要
Purposes of this study are synthesis of high purity hBN crystals and realization for their new functions. Band gap of hBN crystal and effect of carbon impurity on intense band edge far-ultraviolet emission of hBN were experimentally clarified. For applications as substrates for graphene, function of hBN graphene layered structure as well as hBN MoS2 structures were investigated on the basis with international collaborations. Fundamental research to understand doping mechanism of large size mismatch system were carried out in the system of Ce doped cBN and AlN.
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高窒素含有遷移金属窒化物の製造方法及び高窒素含有
一种高氮过渡金属氮化物的生产方法及高氮含量
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[]
通讯作者:
六方晶窒化ホウ素単結晶の光学特性とその応用
六方氮化硼单晶的光学性质及其应用
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[太宰 卓朗, 濵嵜 容丞, 安井 伸太郎, 谷山 智康, 伊藤 満, 渡邊賢司]
通讯作者:
渡邊賢司
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[三好正悟, 田丸奏, Kim Dongyoung, Yoon Joonyoung, 山口周, T.Taniguchi]
通讯作者:
T.Taniguchi
Band alignment of zinc-blende and chalcopyrite semiconductors : Effects of misfit dislocations
闪锌矿和黄铜矿半导体的能带排列:失配位错的影响
DOI:
--
发表时间:
2014
期刊:
影响因子:
--
作者:
[T. Honma, T. Komatsu, F.Oba]
通讯作者:
F.Oba
Synthesis of hBN single crystals at high pressure and ambient pressure and their properties
高压和常压六方氮化硼单晶的合成及其性能
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
[S.A.Hunt, A.Lindsay-Scott, I.G.Wood, T.Taniguchi, T.Taniguchi, T.Taniguchi, T.Taniguchi, T. Taniguchi]
通讯作者:
T. Taniguchi
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