Physics of contact interface of electron emission devices for display

显示用电子发射器件接触界面物理

• 批准号: 09650030
• 负责人: KOIDE Yasuo
• 金额: $ 2.18万
• 依托单位: KYOTO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09650030/
• 关键词: Diamond; Field emission; Surface damage; Display; Electron source; Tunnel current; 電界電子放出; 気相成長; 電気伝導; スパッタリング; 安定性; ダイヤモンド状カーボン; 電子放出; 電極; 界面

A semiconducting diamond is a potential element of the electron emitters with high efficiency, because the diamond was reported to have negative or small positive electron affinity, which is advantageous for enhancing the emission efficiency. In order to increase the efficiency, many factors which affect the efficiency must be improved. The effects of surface morphology on the field emission properties of non-doped polycrystalline diamond films with thicknesses ranging from 5 to 55 μm were studied. Diamond films grown by a microwave plasma chemical vapor deposition technique had both the diamond and non-diamond components with pyramidal and angular crystalline structures. Although the average crystallite size increased with increasing the film thickness (d), the volume fraction of the non-diamond components in the films was insensitive to the film thickness. However, the turn-on electric field, FィイD2TィエD2, (defined as the low-end electric field to emit electrons) showed a U-shape dependence on the film thickness. This U-shape dependence was explained by a model in which the emission current was controlled by the resistance at surface of the pyramids when d was thinner than 20 μm and by the resistance in the diamond film when d was thicker than 20 μm. The lowest field of 4 V/μm was obtained in the film with 20 μm thick.

半导体金刚石是具有高效率的电子发射体的潜在元素，因为据报道金刚石具有负或小的正电子亲和力，这有利于提高发射效率。为了提高效率，必须改善影响效率的许多因素。研究了厚度为5 ~ 55 μm的非掺杂多晶金刚石薄膜的表面形貌对其场发射性能的影响。微波等离子体化学气相沉积技术生长的金刚石薄膜具有金刚石和非金刚石成分，具有金字塔和角晶结构。虽然平均晶粒尺寸随薄膜厚度（d）的增加而增加，但薄膜中非金刚石组分的体积分数对薄膜厚度不敏感。然而，开启电场，F D2 T D2，（定义为低端电场发射电子）显示了一个U形依赖于膜厚度。当d小于20 μ m时，发射电流由棱锥表面电阻控制，当d大于20 μ m时，发射电流由金刚石膜电阻控制。薄膜厚度为20 μm时，电场强度最低可达4V/μm。

项目成果

Y. Koide, T. Toyama, and M. Murakami: "Field Emission Characteristics of Non-doped Polycrystalline Diamond Films Synthesized by MPCVD"Diamond Films and Technology. vol.8, No.6. 407-413 (1998)

Y. Koide、T. Toyama 和 M. Murakami：“MPCVD 合成的非掺杂多晶金刚石薄膜的场发射特性”金刚石薄膜和技术。

Masatsugu Itahashi: "Field Emission Properties of B-doped p-Diamond Films Grown by Microwave-plisma chemical vapor deposition"J.Vac.Sci & Technol. (予定). (2000)

Masatsugu Itahashi：“通过微波等离子体化学气相沉积生长的 B 掺杂 p 金刚石薄膜的场发射特性”J.Vac.Sci & Technol（计划）。

Takuma Asari: "Field Emission Properties of Diamond-like-carbon Films Grown by microwave plasma chemical Vapor-Deposition"J.Vac.Sci & Technol. (予定). (2000)

Takuma Asari：“通过微波等离子体化学气相沉积生长的类金刚石碳薄膜的场发射特性”J.Vac.Sci & Technol（计划）。

Takuma Asari: "Reliability for Field E mission Properties of Diamond Films Grown by Microwave plasma chemical vapor-deposition"J.Vac.Sci & Technol. (予定). (2000)

Takuma Asari：“微波等离子体化学气相沉积生长的金刚石薄膜的场发射特性的可靠性”J.Vac.Sci & Technol（计划）。

M. Itahashi, K. Umehara, Y. Koide, and M. Murakami: "Field Emission Properties of B-doped p-Diamond Films Grown by Microwave-plasma Chemical Vapor Deposition"J. Vac. Sci. & Technol.. (in press).

M. Itahashi、K. Umehara、Y. Koide 和 M. Murakami：“微波等离子体化学气相沉积生长的 B 掺杂 p 金刚石薄膜的场发射特性”J。