UV-Mask- and Bond-Aligner
UV 掩模和粘合对准器
基本信息
- 批准号:519023672
- 负责人:
- 金额:--
- 依托单位:
- 依托单位国家:德国
- 项目类别:Major Research Instrumentation
- 财政年份:2023
- 资助国家:德国
- 起止时间:2022-12-31 至 无数据
- 项目状态:未结题
- 来源:
- 关键词:
项目摘要
An UV mask aligners is a basic tool for microsystems technology research. Currently, the Chair for Microsystems Technology owns a 30-year-old 3" mask aligner, only. A mask aligner for up to 150 mm wafers is available at the Center for Interface-Dominated High Performance Materials (ZGH, RUB core facility). Research projects in the fields of MEMS and 2D electronics research, especially in cooperation with scientific and industrial partners require a step-up to 200 mm substrates, e.g. in cooperation with FhG IMS Duisburg (Forschungsfabrik Mikroelektronik Deutschland, FMD) for 2D electronics. With respect to this, the cleanroom was upgraded for 200 mm, the mask aligner is the only missing link for a continuous 100 mm and 200 mm MEMS line. In 2021, a three-chamber PVD cluster tool (DFG) and a five-chamber ALD/RIE cluster were installed, both suitable for up to 200 mm. The ISO 6 lithography cleanroom is equipped with work benches and includes a 200 mm spincoating cluster for resists. Micro-nano-integration requires moreover nanoimprint-lithography using soft flexible templates for optical, electronic and sensing applications, also for flexible and thin glass substrates. For MEMS as well as for the temporal stabilization of flexible substrates, bonding of two wafers or substrates is important, that can be performed with the alignment system of the mask aligner. The requirements for the mask and bond aligner include backside alignment with better than 1 micrometer on front and 2 micrometers on backside and an LED-based UV source resulting in an optical resolution better than 1 micrometer for lines and spaces with hard- or vacuum contact. It allows a Hg-free use without preheating time and nitrogen purge for the source but a similar emission spectrum for commercial resists including dry resists and high-resolution thin film resists. The use of wafers from 30 μm up to 5 mm thickness and a proximity function are mandatory. Masks and wafers are loaded manually, the alignment should be support by vision control. Mask and wafer chucks are required for 100 mm and 200 mm substrates, as both sizes are used depending on the research project. The precise alignment function is used for both mask and bond alignment. Bonding will be supported by polymers for a temporal stabilization of substrates or for a permanent lamination. It is used for a stabilized handling of thin glass substrates but also for MEMS packaging on waferlevel.
紫外掩模对准器是微系统技术研究的基本工具。目前,微系统技术主席只有一个30岁的3英寸掩模对准器。接口主导的高性能材料中心(ZGH, RUB核心设施)可提供高达150毫米晶圆的掩模对准器。MEMS和2D电子研究领域的研究项目,特别是与科学和工业合作伙伴的合作,需要升级到200毫米的基板,例如与FhG IMS杜伊斯堡(Forschungsfabrik microelektronik Deutschland, FMD)合作的2D电子产品。为此,洁净室升级为200mm,掩模对准器是连续100mm和200mm MEMS线的唯一缺失环节。2021年,安装了一个三腔室PVD簇工具(DFG)和一个五腔室ALD/RIE簇,两者都适用于200mm。ISO 6光刻洁净室配备了工作台,并包括一个200毫米的抗蚀剂纺丝涂层集群。此外,微纳集成还需要使用柔性模板的纳米压印光刻技术,用于光学、电子和传感应用,也用于柔性和薄玻璃基板。对于MEMS以及柔性基板的时间稳定,两个晶圆或基板的键合非常重要,这可以通过掩模对准器的对准系统来完成。对掩膜和粘合对准器的要求包括正面对准优于1微米,背面对准优于2微米,以及基于led的UV源,使得具有硬接触或真空接触的线条和空间的光学分辨率优于1微米。它允许无汞使用,无需预热时间和氮气净化源,但类似的发射光谱用于商业抗蚀剂,包括干抗蚀剂和高分辨率薄膜抗蚀剂。使用从30 μm到5mm厚度的晶圆和接近功能是强制性的。掩模和晶圆是手动加载的,对齐应由视觉控制支持。100毫米和200毫米基板需要掩模和晶圆卡盘,因为根据研究项目使用这两种尺寸。精确对准功能用于掩膜和键对齐。结合将由聚合物支持,用于衬底的暂时稳定或永久层压。它用于稳定处理薄玻璃基板,也用于晶圆级的MEMS封装。
项目成果
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其他文献
吉治仁志 他: "トランスジェニックマウスによるTIMP-1の線維化促進機序"最新医学. 55. 1781-1787 (2000)
Hitoshi Yoshiji 等:“转基因小鼠中 TIMP-1 的促纤维化机制”现代医学 55. 1781-1787 (2000)。
- DOI:
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LiDAR Implementations for Autonomous Vehicle Applications
- DOI:
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2021 - 期刊:
- 影响因子:0
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吉治仁志 他: "イラスト医学&サイエンスシリーズ血管の分子医学"羊土社(渋谷正史編). 125 (2000)
Hitoshi Yoshiji 等人:“血管医学与科学系列分子医学图解”Yodosha(涉谷正志编辑)125(2000)。
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Effect of manidipine hydrochloride,a calcium antagonist,on isoproterenol-induced left ventricular hypertrophy: "Yoshiyama,M.,Takeuchi,K.,Kim,S.,Hanatani,A.,Omura,T.,Toda,I.,Akioka,K.,Teragaki,M.,Iwao,H.and Yoshikawa,J." Jpn Circ J. 62(1). 47-52 (1998)
钙拮抗剂盐酸马尼地平对异丙肾上腺素引起的左心室肥厚的影响:“Yoshiyama,M.,Takeuchi,K.,Kim,S.,Hanatani,A.,Omura,T.,Toda,I.,Akioka,
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