Development of High-Efficiency High-Frequency Ultrasonic Transducers for Acousto-Optic Devices.
Development of High-Efficiency High-Frequency Ultrasonic Transducers for Acousto-Optic Devices.
批准号:
60550272
负责人:
NAKAMURA Kiyoshi
金额:
$1.34万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (C)
财政年份:
1985
资助国家:
日本
项目状态:
已结题
起止时间:
1985 至 1986
中文摘要
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英文摘要
In order to realize high-performance acousto-optic devices such as light modulators and deflectors, high-efficiency broadband ultrasonic transducers operating at ultra-high frequencies up to 10 GHz are required. The purpose of this research project is to propose and develop a new type ultrasonic transducer for acousto-optic devices consisting of interdigital electrodes on a grooved surface of LiNb <O_3> . The results obtained in this project can be summarized as follows:1. Optimum surface orientations and groove directions for the transducer were investigated. It was shown that the 36゜ rotated Y-cut with grooves parallel to the Z' axis is suitable for shear-wave transduction and the X-cut with grooves making an angle of 37.86゜ with the Z axis is suitable for longitudinal-wave transduction.2. Piezoelectrically-induced stress distributions, radiated acoustic wave fields, and conversion loss of the transducers on the optimum cuts were analysed using a finite element method. The dependence … More of the frequency characteristics on the depth, width, and period of grooves was studied. The center frequency was shown to be situated near the frequency where the groove depth is equal to a galf-wavelength.3. A fabrication process for transducers up to 300 MHz, using dicing saws and photolithographic techniques, was developed. It was demonstrated that a shear-wave transducer fabricated on a X-cut of LiNb <O_3> by this process had a conversion loss as low as 2.5 dB and a large specific bandwidth as large as 110%.4. As a fabrication process for transducers operating at high frequencies up to 10 GHz, we investigated an ion-etching technique using <C_2F_6> gas. Aluminum and chromium films were shown to be suitable as an etching mask. For an RF power of 100 W, the etch rate of <LiNbO_3> was about 3 <micro> m/h and the ratio of the etch rate to that of Al masks was about 3.5. The analysis of anisotropic Bragg diffraction of light beams showed that the Bragg angle of the incident light beam has a stationary value near several GHz for X-cut and 163゜ rotated Y-cut transducers, which leads to broadband acousto-optic devices. Less
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中村僖良: Electronics Letters. 23. 74-75 (1987)
中村耀西:《电子通讯》23. 74-75 (1987)
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通讯作者:
Kiyoshi Nakamura: "Planar Ultrasonic Transducers Using <LiTaO_3> Poled with Interdigital Electrodes." Japanese Journal of Applied Physics. S25-1. 139-141 (1985)
Kiyoshi Nakamura:“使用 <LiTaO_3> 极化叉指电极的平面超声波换能器。”
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中村僖良: 日本音響学会講演論文集. 2-2-16. 653-654 (1985)
Yoshiyoshi Nakamura:日本声学学会会议记录 2-2-16(1985)。
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中村僖良: Japanese Journal of Applied Physics. S-25. 139-141 (1985)
Yoshi Nakamura:日本应用物理学杂志。139-141(1985)。
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中村僖良: Proceedings of 1986 IEEE Ultrasonics Symposium. (1986)
Yoshi Nakamura:1986 年 IEEE 超声研讨会论文集 (1986)。
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The Commoditization of Differences' and Local identity
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Development of High Precision Fast Light Deflectors Utilizing Inverted Domains of Lithium Niobate Single Crystals.
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Ferroelectric Domain Inversion Caused by Heat Treatment of Piezoelectric Crystals and Its Application.
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Development of Hysteresis-Free High-Precision Piezoelectric Actuators Using High Curie-Point Crystals.
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