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mu-probe Auger Electron Diffraction Study of the Structure of Solid Surfaces

固体表面结构的 mu-probe 俄歇电子衍射研究

基本信息

批准号：
61420046
负责人：
KONO Shozo
金额：
$ 12.42万
依托单位：
TOHOKU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (A)
财政年份：
1986
资助国家：
日本
起止时间：
1986 至 1989
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-61420046/
关键词：
Surface Interface Scanning Electron Microscopy Si(111) Surface In Overlayer Ag Overlayer オージェ電子分光

项目摘要

Construction of the micro(mu)-probe Auger electron diffraction apparatus has been completed. Most of the performance test were satisfactory, but one was not as good as planed. The following is a summary of the performance tests. 1. Vacuum (base pressure of -2x10^<-10> Torr)--as planed. 2. Spatial resolution (-100A^^ﾟ)--as planed. 3. Performance as a UHV-RHEED apparatus --- as planed. 4. Performance as a mu-probe Auger electron diffraction apparatus --- as planed. 5. Performance as a mu-probe RHEED apparatus --- not as good as planed. The poor performance as a mu-probe RHEED apparatus is evaluated when the performance of present apparatus is compared with that of Dr. M. Ichikawa et al.'s at Hitachi central research laboratory. Although improvement of the present apparatus as a mu-probe RHEED is highly desirable, the result of performance test 4, which is the most important feature of the present apparatus, makes it possible to say that the present research project is successful.Actual research programs using the newly completed apparatus have just started. We have performed several typical studies of metal adsorptions on Si(111) surfaces that indicate future prospects of success of the present type of research. They are the following. 1. mu-probe Auger electron spectroscopy--( determination of Ag coverage of Si(111)ROO<3>xROO<3>-Ag surface) 2. UHV Scanning electron remicroscopy--(observations of the growth-mode of Si(111) and In transportation on In/Si(111)) 3. mu-probe Auger electron diffraction --( measurements of In MNN Auger electron diffraction pattern for Si(111)ROO<3>xROO<3>-In and Si(111)4x1-In surfaces).

完成了微探针俄歇电子衍射仪的构建。大多数的性能测试是令人满意的，但有一个不如计划的那么好。以下是性能测试的摘要。1. 真空（基压为-2x10^<-10> Torr）-按计划进行。2. 空间分辨率(-100A^^)-按计划进行。3. 作为UHV-RHEED设备的性能-按计划进行。4. 性能作为一个μ探针俄歇电子衍射仪-如计划。5. 作为一个微探针RHEED设备的性能-不如计划的那么好。当将本装置的性能与日立中央研究实验室的M. Ichikawa博士等人的性能进行比较时，评估了作为mu探针RHEED装置的不良性能。虽然目前的设备作为一个mu探针RHEED的改进是非常可取的，性能测试4的结果，这是目前设备最重要的特征，使我们有可能说，目前的研究项目是成功的。使用新完成的仪器的实际研究项目才刚刚开始。我们已经进行了几个典型的金属在Si（111）表面吸附的研究，这些研究表明了当前类型研究的成功前景。它们如下。1. μ探针俄歇电子能谱法（测定Si(111)ROO<3>xROO<3>-Ag表面Ag覆盖率）特高压扫描电子显微技术——（Si（111）的生长方式和In在In/Si（111）上输运的观察）mu探针俄歇电子衍射——(测量Si（111)ROO<3>xROO<3>-In和Si(111)4x1-In表面的In MNN俄歇电子衍射图）。