mu-probe Auger Electron Diffraction Study of the Structure of Solid Surfaces

微(µ)探针俄歇电子衍射仪的建造已经完成。大部分性能测试是令人满意的，但有一次不如计划的好。以下是性能测试的摘要。1.真空(基压-2x10^&lt；-10；Torr)--按计划。2.空间分辨率(-100a^^ﾟ)--按计划。3.作为特高压-RHEED设备的性能-按计划。4.作为多探头俄歇电子衍射仪的性能-按计划进行。5.作为单探头RHEED装置的性能-不如计划的那样好。通过将本装置的性能与日立中心研究实验室的M·市川等人的S博士的性能进行比较，对作为多探头RHEED装置的较差性能进行了评估。虽然作为多探头RHEED的本装置的改进是非常理想的，但是作为本装置最重要的特征的性能测试4的结果使得可以说本研究项目是成功的。我们已经对金属在Si(111)表面上的吸附进行了几个典型的研究，这预示着本类型研究的未来成功的前景。它们如下所示。1.MU-探针俄歇电子能谱--(测定Si(111)RoO&lt；3&gt；xROO&lt；3&gt；-Ag表面的银覆盖率)2.超高真空扫描电子显微镜--(观察Si(111)的生长方式和In/Si(111)上的输运)3.Mu-探针俄歇电子衍射--(测量Si(111)Roo&lt；3&gt；xROO&lt；3&gt；-In和Si(111)4x1-In表面的MNN俄歇电子衍射图)。

Construction of the micro(mu)-probe Auger electron diffraction apparatus has been completed. Most of the performance test were satisfactory, but one was not as good as planed. The following is a summary of the performance tests. 1. Vacuum (base pressure of -2x10^<-10> Torr)--as planed. 2. Spatial resolution (-100A^^ﾟ)--as planed. 3. Performance as a UHV-RHEED apparatus --- as planed. 4. Performance as a mu-probe Auger electron diffraction apparatus --- as planed. 5. Performance as a mu-probe RHEED apparatus --- not as good as planed. The poor performance as a mu-probe RHEED apparatus is evaluated when the performance of present apparatus is compared with that of Dr. M. Ichikawa et al.'s at Hitachi central research laboratory. Although improvement of the present apparatus as a mu-probe RHEED is highly desirable, the result of performance test 4, which is the most important feature of the present apparatus, makes it possible to say that the present research project is successful.Actual research programs using the newly completed apparatus have just started. We have performed several typical studies of metal adsorptions on Si(111) surfaces that indicate future prospects of success of the present type of research. They are the following. 1. mu-probe Auger electron spectroscopy--( determination of Ag coverage of Si(111)ROO<3>xROO<3>-Ag surface) 2. UHV Scanning electron remicroscopy--(observations of the growth-mode of Si(111) and In transportation on In/Si(111)) 3. mu-probe Auger electron diffraction --( measurements of In MNN Auger electron diffraction pattern for Si(111)ROO<3>xROO<3>-In and Si(111)4x1-In surfaces).