Establishment of Structural Analysis Method of High Resolution X-ray Photoelectron Diffraction for Hetero-epitaxial Growth Surface and Interface Systems

本项目的主题是建立异质外延生长表面和界面系统的高分辨率x射线光电子衍射结构分析方法。1998财政年度，购买了一台高能量分辨率和高计数效率的电子能量分析仪。设计并制作了一种计算机控制样品旋转的样品机械手。设计制作了球形μ金属超高真空室。将这些元件组装成高分辨率光电子衍射谱仪，并进行了性能测试。我们还在ALS同步辐射装置上对β-SiC(001)-c(2x2)表面进行了光电子衍射研究，测量了C1S光电子衍射谱，并对其进行了分析。1999财政年度，我们在Si(001)表面形成的铋纳米线上试运行了所构建的高分辨率光电子衍射谱仪，以实验室光源Al Kα和Mg Kα测定铋原子的排列。然后，我们把光谱仪带到了筑波的同步辐射设施KE的光子工厂。用波纹光束线测量了Si(001)1x2-Sb表面的Si2p表面-芯级成分的PED图样。在2000财政年度，PED光谱仪再次被带到光子工厂，以测量吸附在Si(001)表面的乙烯的C1S PED图样。通过对PED图谱的分析，确定了乙烯在Si(001)面上的几何构型。这些结果证明了所构建的PED光谱仪和高分辨率光电子衍射技术是至关重要的，并且可以在未来几年用于其他许多异质外延系统。

The main theme of this project is to establish the structural analysis method of high resolution x-ray photoelectron diffraction for hetero-epitaxial growth surface and interface systems. In fiscal year 1998, an electron energy analyzer with high energy-resolution and high-counting efficiency was bought. A sample manipulator with computer control sample-rotation was designed and made. A spherical μ-metal ultra-high-vacuum chamber was designed made made. All these components were assembled into a high-resolution photoelectron diffraction spectrometer and a performance test was done. We have also gone to ALS synchrotron radiation facility to experience photoelectron diffraction study on β-SiC(001)-c(2x2) surface and measured C1s PED patterns and later analyzed the patterns.In fiscal year 1999, a test run of the constructed high-resolution photoelectron diffraction spectrometer was made on a nano-wire of Bi formed on Si(001) surface to determine arrangement of Bi atoms using laboratory light sources of Al Kα and Mg Kα. Then, we brought the spectrometer to Photon Factory at KE, a synchrotron radiation facility in Tsukuba. An undulater beam-line was used to measure Si 2p surface-core-level component PED patterns for Si(001)1x2-Sb surface. The PED patterns were later analyzed to determine the origin of the Si 2p component.In fiscal year 2000, the PED spectrometer again was brought to Photon Factory to measure C 1s PED patterns for ethylene adsorbed on Si(001) surface. The PED patterns were later analyzed to determine the geometry of ethylene on Si(001).All these results proved that the constructed PED spectrometer and the technique of high-resolution photoelectron diffraction are vital and can be used for other many hetero-epitaxial systems for years to come.