权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Establishment of Structural Analysis Method of High Resolution X-ray Photoelectron Diffraction for Hetero-epitaxial Growth Surface and Interface Systems

异质外延生长表面和界面体系高分辨率X射线光电子衍射结构分析方法的建立

基本信息

批准号：
10305005
负责人：
KONO Shozo
金额：
$ 25.73万
依托单位：
TOHOKU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A).
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 2000
项目状态：
已结题

项目摘要

The main theme of this project is to establish the structural analysis method of high resolution x-ray photoelectron diffraction for hetero-epitaxial growth surface and interface systems. In fiscal year 1998, an electron energy analyzer with high energy-resolution and high-counting efficiency was bought. A sample manipulator with computer control sample-rotation was designed and made. A spherical μ-metal ultra-high-vacuum chamber was designed made made. All these components were assembled into a high-resolution photoelectron diffraction spectrometer and a performance test was done. We have also gone to ALS synchrotron radiation facility to experience photoelectron diffraction study on β-SiC(001)-c(2x2) surface and measured C1s PED patterns and later analyzed the patterns.In fiscal year 1999, a test run of the constructed high-resolution photoelectron diffraction spectrometer was made on a nano-wire of Bi formed on Si(001) surface to determine arrangement of Bi atoms using laboratory light sources of Al Kα and Mg Kα. Then, we brought the spectrometer to Photon Factory at KE, a synchrotron radiation facility in Tsukuba. An undulater beam-line was used to measure Si 2p surface-core-level component PED patterns for Si(001)1x2-Sb surface. The PED patterns were later analyzed to determine the origin of the Si 2p component.In fiscal year 2000, the PED spectrometer again was brought to Photon Factory to measure C 1s PED patterns for ethylene adsorbed on Si(001) surface. The PED patterns were later analyzed to determine the geometry of ethylene on Si(001).All these results proved that the constructed PED spectrometer and the technique of high-resolution photoelectron diffraction are vital and can be used for other many hetero-epitaxial systems for years to come.

该项目的主题是建立异质外延生长表面和界面系统的高分辨率X射线光电子衍射结构分析方法。 1998财年，购买了高能量分辨率、高计数效率的电子能量分析仪。设计并制作了一种计算机控制样品旋转的样品机械手。设计制作了球形μ金属超高真空腔体。将所有这些部件组装成高分辨率光电子衍射光谱仪并进行性能测试。我们还前往ALS同步辐射装置体验了β-SiC(001)-c(2x2)表面的光电子衍射研究，测量了C1s PED图案并随后对图案进行了分析。1999财年，在Si(001)表面上形成的Bi纳米线上对所构建的高分辨率光电子衍射光谱仪进行了测试，以确定Bi的排列使用 Al Kα 和 Mg Kα 实验室光源进行原子分析。然后，我们将光谱仪带到了位于筑波的同步加速器辐射设施 KE 的光子工厂。使用波状光束线测量 Si(001)1x2-Sb 表面的 Si 2p 表面核级组件 PED 图案。随后分析PED图谱以确定Si 2p组分的来源。2000财年，PED光谱仪再次被带到Photon Factory来测量吸附在Si(001)表面上的乙烯的C 1s PED图谱。随后对 PED 图案进行了分析，以确定 Si(001) 上乙烯的几何形状。所有这些结果证明，所构建的 PED 光谱仪和高分辨率光电子衍射技术至关重要，并且可在未来几年用于其他许多异质外延系统。