Development of a Local-Surface-Analysis Apparatus with Micro-Electron Beam and Retarding Two-Dimensional Display Type Electron Analyzer

微电子束及延迟二维显示型电子分析仪局部表面分析仪的研制

基本信息

  • 批准号:
    07554051
  • 负责人:
  • 金额:
    $ 1.6万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
  • 财政年份:
    1995
  • 资助国家:
    日本
  • 起止时间:
    1995 至 1996
  • 项目状态:
    已结题

项目摘要

We have developed an apparatus suitable for analyzing structures and chemical compositions of local surfaces. This apparatus is composed of a micro-electron beam and a retarding-field two-dimensional display-type electron energy analyzer (RDA analyzer) and called mu-GBMEED ; abbreviation for Grazing-incidence Backscattering Medium Energy Electron Diffraction. The method of GBMEED has been invented by the head investigator in which a monochromatic electron beam of an energy of 1 to 3 keV is incident on a specimen surface at a grazing angle and elastically scattered electrons along backward direction are analyzed by the RDA analyzer. This dives us a so-called mu-GBMEED pattern. By analyzing this pattern, structural and compositional information about local surface of an order of -0.1 mum can be obtained. The apparatus has been realized by combining a commercial mu-electron beam gun and a home-made RDA analyzer on a specially designed ultrahigh vacuum chamber. Signals from the RDA analyzer are recorded with a CCD-camera system which mu-GBMEED patterns with a wide-solid angle can be efficiently stored in a computer memory. The apparatus is also combined with a UHV-STM system, so that atomic-scale STM images on the same specimen surface can be measured and used as a guide for thr analysis by mu-GBMEED.As a test of the apparatus, we have investigated a Si (001) surface in order to determine the backling angle of the buckled Si-dimers wich are known to be present. The buckling angle is reported to be about 19^゚ but is not so certain. A single domain Si (001) 2x1 surface was investigated with mu-electron beam at 1 to 2 KeV and mu-GBMEED patterns were recorded. With the aid of presently developed single-scattering method for GBMEED,a forward-scattering diffraction feature was found. However, the quality of the pattern was not good enough to finally determine the buckling angle. We are in the stage of improving the quality of GBMEED patterns by several means.
我们研制了一种适合于分析局部表面结构和化学成分的装置。该装置由微电子束和延迟场二维显示型电子能量分析器(RDA分析器)组成,称为μ-GBMEED;掠入射背散射中能电子衍射的缩写。GBMEED方法是由首席研究员发明的,其中能量为1至3 keV的单色电子束以掠射角入射到试样表面上,并且通过RDA分析仪分析沿沿着向后方向的弹性散射电子。这给我们带来了所谓的mu-GBMEED模式。通过分析这种模式,结构和成分信息的顺序为-0.1微米的局部表面可以得到。该装置是在一个专门设计的真空室中,将一个商用μ电子束枪和一个国产RDA分析器相结合而实现的。来自RDA分析仪的信号用CCD相机系统记录,该CCD相机系统可以有效地将具有宽立体角的mu-GBMEED图案存储在计算机存储器中。该装置还与UHV-STM系统相结合,从而可以在同一样品表面上测量原子尺度的STM图像,并用作μ-GBMEED分析的指导.作为该装置的测试,我们研究了Si(001)表面,以确定已知存在的屈曲Si-二聚体的背倾角.据报道,屈曲角约为19 °,但并不确定。用1 - 2KeV的μ电子束研究了单畴Si(001)2x 1表面,并记录了μ GBMEED图。利用目前发展起来的GBMEED单次散射方法,发现了前向散射衍射特征,但其衍射图样质量不足以最终确定屈曲角。我们正处于通过几种方法提高GBMEED模式质量的阶段。

项目成果

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KONO Shozo其他文献

KONO Shozo的其他文献

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{{ truncateString('KONO Shozo', 18)}}的其他基金

Establishment of Structural Analysis Method of High Resolution X-ray Photoelectron Diffraction for Hetero-epitaxial Growth Surface and Interface Systems
异质外延生长表面和界面体系高分辨率X射线光电子衍射结构分析方法的建立
  • 批准号:
    10305005
  • 财政年份:
    1998
  • 资助金额:
    $ 1.6万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A).
mu-probe Auger Electron Diffraction Study of the Structure of Solid Surfaces
固体表面结构的 mu-probe 俄歇电子衍射研究
  • 批准号:
    61420046
  • 财政年份:
    1986
  • 资助金额:
    $ 1.6万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (A)

相似海外基金

mu-probe Auger Electron Diffraction Study of the Structure of Solid Surfaces
固体表面结构的 mu-probe 俄歇电子衍射研究
  • 批准号:
    61420046
  • 财政年份:
    1986
  • 资助金额:
    $ 1.6万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (A)
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