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Observations of Surface Defects and Related Phenomena to Surface Defects

表面缺陷的观察及与表面缺陷相关的现象

基本信息

批准号：
01420017
负责人：
OSHIMA Chuhei
金额：
$ 13.12万
依托单位：
Waseda University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (A)
财政年份：
1989
资助国家：
日本
起止时间：
1989 至 1991
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-01420017/
关键词：
Scanning LEED microscopy Scanning tunneling microscopy High resolution electron loss spectroscopy Monolayer graphite Reconstructed surface of Si Si-metal Interfaces Electromigration of metal islands on Si surfaces Si表面構造炭化物上の箪原子層グラファイト

项目摘要

Structures and defects in solid surfaces have been investigated by scanning LEED microscopy, scanning tunneling microscopy (SIM) and high-resolution electron energy-loss spectroscopy. The results obtained in 3 years are as follows :1. Bonding state of monolayer graphite formed on TiC (lll)The monolayer graphite formed on a single crystal surface of TiC (lll) has been investigated by high-resolution electron energy-loss spectroscopy. The dispersion of phonon spectra of the monolayer graphite on TiC shows anomalous bonding state between monolayer graphite and substrate. The bonding &tate is discussed based on the calculation.2. initial. stage of epitaxial growth of metal film. s. on Si surfacesInitial stage of epitaxial growth of various metal films on Si (001) and Si (111) 7x7 has been investigated by LEED, AES, -SIM and scanning LEED microscopy. We found a number of super-structures by LEED and several structures of them were determined by SIM. Furthermore, oscillatory diffusion of a Au-monolayer film on Si (lll) was discovered by scanning LEED microscopy.3. Combination of scanning LEED microscopy with STMThe spatial resolution of scanning LEED microscopy has been improved by combination with STM. The chemical bonding state of monolayer graphite on TiC (lll) and a phase transition from single to doublle domain for Si (001) vicinal surfaces are investigated by this technique.4. Electromigration of metal islands on Si (001)Electromigration of metal islands formed on Si (001) has been investigated by ultrahigh vacuum SEM, For the origin of the driving force dn electromigration, it is found that local temperature difference due to the Peltier effect causes electromigration towards the direction to the high temperature by the effect of surface tension.The 20 papers have been published during the term of this project.

用扫描LEED显微镜、扫描隧道显微镜(SIM)和高分辨电子能量损失谱研究了固体表面的结构和缺陷。1.用高分辨电子能量损失谱研究了TiC(111)单晶表面形成的单层石墨的成键状态。单层石墨在TiC上的声子谱色散显示出单层石墨与衬底之间的异常成键状态。并在此基础上讨论了键合状态。首字母。金属薄膜外延生长阶段。用LEED、AES、-SIM和扫描LEED显微镜研究了各种金属薄膜在Si(001)和Si(111)7×7上外延生长的初始阶段。我们通过LEED发现了一些超结构，并用SIM确定了其中的几个结构。此外，扫描LEED显微镜还发现了Au单层膜在Si(111)表面的振荡扩散。扫描LEED显微镜与扫描隧道显微镜的结合扫描LEED显微镜与扫描隧道显微镜的结合提高了扫描LEED显微镜的空间分辨率。利用该技术研究了单层石墨在TiC(111)表面上的化学键状态，以及Si(001)邻近表面从单区到双区的相变。用超高真空扫描电子显微镜研究了在Si(001)面上形成的金属岛的电迁移。对于电迁移驱动力的来源，发现Peltier效应引起的局部温差引起的表面张力导致了向高温方向的电迁移。在本项目期间发表了20篇论文。