Crystal growth of p type ZnS by MBE and its application to light emitting device.

MBE法p型ZnS晶体生长及其在发光器件中的应用

• 批准号: 63550230
• 负责人: KANEDA Shigeo
• 金额: $ 1.34万
• 依托单位: Nagaoka University of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1988
• 资助国家: 日本
• 起止时间: 1988 至 1989
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-63550230/
• 关键词: molecular beam epitaxy (MBE); compound semiconductor ZnS; Laser irradiation during MBE growth; Light emitting device; 発光素子への応用; 分子線エピタシヤル法; II-VI族化合物半導体(ZnS); 青色発光素子

As the results of numerous experimental studies, we obtained many useful knowledges as mentioned below. 1. Single crystal of ZnS having high quality can be grown by molecular beam epitaxy under the suitable growth conditions, and the various growth mechanisms become clear. 2. The crystallinity is much related to the growth conditions such as : the molecular beam strengths and the ratio of each supplied molecular beam, thermal cracking temperature of molecular beam, film thickness, crystal surface of used substrate crystal, substrate temperature and so on. 3. Sodium doping for p type ZnS can be easily performed using Na_2S solid state molecular source but the crystallinity becomes somewhat worse. 4. The irradiation of short wave laser light such as ArF excimer laser is effective to improve the crystallinity for both undoped and doped ZnS crystal. 5. It can be concluded that the application to the practical device can be probably realized by this method.

作为大量实验研究的结果，我们获得了许多有用的知识，如下所述。1.在合适的生长条件下，用分子束外延技术可以生长出高质量的硫化锌单晶，各种生长机制清晰可见。2.结晶度与生长条件密切相关，如：分子束强度及各束流的比例、分子束的热裂解温度、薄膜厚度、所用衬底晶体的晶面、衬底温度等。3.利用Na_2S固态分子源可以很容易地实现p型硫化锌的钠掺杂，但结晶度有所下降。4.用ArF准分子激光等短波激光照射可以有效地提高未掺杂和掺杂的硫化锌晶体的结晶度。5.可以看出，该方法有可能实现在实际装置上的应用。

项目成果

Shigeo,Kaneda et al: Journal of Applied Physics. 64. 3945-3948 (1988)

Shigeo，Kaneda 等人：《应用物理学杂志》。

S.Motoyama and S.Kaneda: "Low temperature growth of single crystalline 3C-SiC by the gas source molecular beam epitaxial method." Applied Physics Letters. 54. 242-243 (1989)

S.Motoyama 和 S.Kaneda：“气源分子束外延法单晶 3C-SiC 的低温生长”。

Shin-ichi,Motoyama;Shigeo,Kaneda: Appleid Physics Letter. 54. 242-243 (1989)

Shin-ichi，Motoyama；Shigeo，Kaneda：Appleid 物理快报。

S. Motoyama, N. Morikawa and S. Kaneda: "Low temperature growth and its growth mechanism of 3C-SiC crystal by gas source molecular beam epitaxial method." Journal Crystal Growth, (1990).

S. Motoyama、N. Morikawa和S. Kaneda：“气源分子束外延法3C-SiC晶体的低温生长及其生长机制”。

S.Kaneda,T.Shimoguchi,H.Takahashi,S.Motoyama,F.Kano,M.Yokoyama and S.Satou: "Optimum growth condition of single-crystalline undoped ZnS grown by the molecular-beam-epitaxial method using a H_2S gas source." Journal of Applied Physics. 64. 3945-3948 (1988)

S.Kaneda,T.Shimoguchi,H.Takahashi,S.Motoyama,F.Kano,M.Yokoyama 和 S.Satou：“使用 H_2S 分子束外延法生长单晶无掺杂 ZnS 的最佳生长条件