Crystal Growth of 3C-SiC by Molecular Beam Epitaxial Method and Its Application to Millimeter-wave Devices.

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This project has following two main objects:1. Establishment of crystal growth method of 3C-SiC having high quality by molecular beam epitaxial (MBE) method,2. Development of-high ability semiconductor devices using SiC especially SiC IMPATT device applicable to microwave frequency region.According to the numerous experimental researches, we obtained many useful results as mentioned below though there is still remained some problems for the application to practical devices,1. MBE method is one of the most effective growth method of SiC single crystal having high quality, 2. This growth method is enough applied to the fabrication of p-n junction devices, 3. It must be necessary to develop the more precise control method during the crvstal growth by MBE method, and it is indicated that the gas source MBE method is very effective for the approach mentioned above.2. This growth method is enough applied to the fabrication of p-n junction devices, 3. It must be necessary to develop the more precise control method during the crvstal growth by MBE method, and it is indicated that the gas source MBE method is very effective for the approach mentioned above.3. It must be necessary to develop the more precise control method during the crvstal growth by MBE method, and it is indicated that the gas source MBE method is very effective for the approach mentioned above.