Crystal Growth of 3C-SiC by Molecular Beam Epitaxial Method and Its Application to Millimeter-wave Devices.

分子束外延法3C-SiC晶体生长及其在毫米波器件中的应用。

• 批准号: 60460118
• 负责人: KANEDA Shigeo
• 金额: $ 3.52万
• 依托单位: Technological University of Nagaoka
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1985
• 资助国家: 日本
• 起止时间: 1985 至 1987
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-60460118/
• 关键词: NOLECULAR BEAM EPITAXY; SiC SINGLE CRYSTAL; CRYSTAL CHARACTERIZATION; MICROWAVE (MILLIMETER-WAVE) SEMICONDUCTOR DEVICES; MOLECULAR BE@aM EPITAXY; MICROWAVE (MILLIMETER; ガスソースMBE; 分子線エピタキシャル(MBE)法; SiC單結晶; ミリ波デバイスへの応用

This project has following two main objects:1. Establishment of crystal growth method of 3C-SiC having high quality by molecular beam epitaxial (MBE) method,2. Development of-high ability semiconductor devices using SiC especially SiC IMPATT device applicable to microwave frequency region.According to the numerous experimental researches, we obtained many useful results as mentioned below though there is still remained some problems for the application to practical devices,1. MBE method is one of the most effective growth method of SiC single crystal having high quality, 2. This growth method is enough applied to the fabrication of p-n junction devices, 3. It must be necessary to develop the more precise control method during the crvstal growth by MBE method, and it is indicated that the gas source MBE method is very effective for the approach mentioned above.2. This growth method is enough applied to the fabrication of p-n junction devices, 3. It must be necessary to develop the more precise control method during the crvstal growth by MBE method, and it is indicated that the gas source MBE method is very effective for the approach mentioned above.3. It must be necessary to develop the more precise control method during the crvstal growth by MBE method, and it is indicated that the gas source MBE method is very effective for the approach mentioned above.

本项目主要有以下两个目标：1.建立了分子束外延（MBE）法生长高质量3C-SiC晶体的方法。利用SiC开发高性能半导体器件，特别是适用于微波频率范围的SiC雪崩器件，根据大量的实验研究，我们获得了以下许多有用的结果，但在实际器件应用中仍存在一些问题：1.分子束外延法是生长高质量SiC单晶最有效的方法之一。这种生长方法完全适用于p-n结器件的制作。因此，在分子束外延生长晶体的过程中，必须发展更精确的控制方法，而气源分子束外延法是实现上述方法的有效途径.这种生长方法完全适用于p-n结器件的制作。因此，在分子束外延生长晶体的过程中，必须发展更精确的控制方法，而气源分子束外延法是实现上述方法的有效途径.因此，在分子束外延生长晶体的过程中，必须发展更精确的控制方法，并指出气源分子束外延法是实现上述方法的有效途径。

项目成果

金田重男: 電子通信学会技術研究報告. SSD86-35. 41-48 (1986)

Shigeo Kaneda：IEICE 技术研究报告。SSD86-35 (1986)。

Shigeo KANADA: J.Cryst.Growth. 81. 536-542 (1987)

Shigeo KANADA：J.Cryst.Growth。

金田重男: 日本学術振興会薄膜第131委員会研究会資料. (1988)

Shigeo Kaneda：日本学术振兴会第 131 届薄膜研究小组材料委员会（1988 年）。

田中隆夫: 電気学会電子材料研究会資料. EFM-86-30. 71-78 (1986)

Takao Tanaka：IEEJ 电子材料研究组材料。 ​​EFM-86-30 (1986)。

Shigeo KANEDA: Electronics Lett.22. 92-93 (1986)

金田茂雄：Electronics Lett.22。