Study of Picosecond Laser-Induced Shock Waves and Phase Transformation in Solids
Study of Picosecond Laser-Induced Shock Waves and Phase Transformation in Solids
批准号:
01550005
负责人:
KANEMITSU Yoshihiko
金额:
$1.28万
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (C)
财政年份:
1989
资助国家:
日本
项目状态:
已结题
起止时间:
1989 至 1990
中文摘要
1.GENERATION OF SHOCK WAVES STUDIED BY A PIEZOELECTRIC TRANSDUCERGeneration and propagation characteristics of picosecond laser-generated acoustic or shock waves in Si were studied by a ZnO transducer.In the Plasma formation region,the propagation velocity of acoustic pulses exceeds the sound velocity。At early stage of propagation.The amplitude of shock waves is affects by the formation and expansion of laser-generated plasma at the silicon surface.2。INTENSE ACOUSTIC WAVES IN GLASS STUDIED BY AN OPTICAL METHODLongitudinal waves propagate at the direction of the normal to the surface plane,but shear waves propagate at about45 to the normal.At the early stage of propagation,the velocity of the wavefront exceeds the sound velocity in glass.Moreover,it is pointed out that the generation and propagation behavior of shear waves is very sensitive to the surface conditions.3。NEW PHOTOACOUSTIC SPECTROSCOPY USING A TRANSPARENT TRANSDUCERWe developed new photoacoustic spectroscopy system using a transparent transducer,and studied laser-induced structural changes at the surface of solids.The signal detected at the light-irradiated front surface has a large value and a good signal-to-noise ration compared with that the back surface.Laser-induced surface structural changes are clearly observed using this system.4。SURFACE TRANSFORMATIONS AFTER HIGH-POWER LASER IRRADIATIONCrack formation in glass surfaces and explosive crystallization in a-Si were observed after high-Zower laser irradiation.The damage in the irradiated region was caused by laser ablation and plasma formation,but cracks and liquid drops also appeared outside the irradiated region over a distance of many millimeters.Delayed crack formation is caused by chemical reactions of component of glass with atmospheric water vapor at microcracks in the surface induced by laser-driven shock waves.We also observed explosive crystallization of a-Si initiated by shock waves.
英文摘要
1. GENERATION OF SHOCK WAVES STUDIED BY A PIEZOELECTRIC TRANSDUCERGeneration and propagation characteristics of picosecond laser-generated acoustic or shock waves in Si were studied by a ZnO transducer. In the Plasma formation region, the propagation velocity of acoustic pulses exceeds the sound velocity. At early stage of propagation. The amplitude of shock waves is affects by the formation and expansion of laser-generated plasma at the silicon surface.2. INTENSE ACOUSTIC WAVES IN GLASS STUDIED BY AN OPTICAL METHODLongitudinal waves propagate at the direction of the normal to the surface plane, but shear waves propagate at about 45 to the normal. At the early stage of propagation, the velocity of the wavefront exceeds the sound velocity in glass. Moreover, it is pointed out that the generation and propagation behavior of shear waves is very sensitive to the surface conditions.3. NEW PHOTOACOUSTIC SPECTROSCOPY USING A TRANSPARENT TRANSDUCERWe developed new photoacoustic spectroscopy system using a transparent transducer, and studied laser-induced structural changes at the surface of solids. The signal detected at the light-irradiated front surface has a large value and a good signal-to-noise ration compared with that at the back surface. Laser-induced surface structural changes are clearly observed using this system.4. SURFACE TRANSFORMATIONS AFTER HIGH-POWER LASER IRRADIATIONCrack formation in glass surfaces and explosive crystallization in a-Si were observed after high-Zower laser irradiation. The damage in the irradiated region was caused by laser ablation and plasma formation, but cracks and liquid drops also appeared outside the irradiated region over a distance of many millimeters. Delayed crack formation is caused by chemical reactions of component of glass with atmospheric water vapor at microcracks in the surface induced by laserーdriven shock waves. We also observed explosive crystallization of aーSi initiated by shock waves.
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Yoshihiko Kanemitu: "Dynamical Aspects of LaserーInduced Phase Transformations in Amorphous GeTe" Journal of NonーCrystalline Solids.
Yoshihiko Kanemitu:“非晶 GeTe 中激光诱导相变的动态方面”非晶固体杂志。
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通讯作者:
Hiroyuki Nabeta: "Characterization of Multilayered Structures by Piezoelectric Photoacoustic Imaging" Japanese Journal of Applied Physics. 30. (1991)
Hiroyuki Nabeta:“通过压电光声成像表征多层结构”日本应用物理学杂志。
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Y. Kanemitsu and H. Nabeta: "Novel Photoacoustic Spectroscopy of Semiconductor Thin Films by a Transparent Transducer." Appl. Phys. Lett.
Y. Kanemitsu 和 H. Nabeta:“通过透明换能器对半导体薄膜进行新型光声光谱分析”。
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Yoshihiko Kanemitsu: "Novel Photoacoustic Spectroscopy of Semiconductor Thin Films by a Transparent Transducer" Applied Physics Letters.
Yoshihiko Kanemitsu:“通过透明换能器对半导体薄膜进行新颖的光声光谱”应用物理快报。
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Y. Kanemitsu and H. Nabeta: "Evaluation of Amorphous Semiconductors by Photoacoustic Spectroscopy using a Transparent Transducer." Jpn. J. Appl. Phys.vol. 29. 277-279 (1990)
Y. Kanemitsu 和 H. Nabeta:“使用透明换能器通过光声光谱评估非晶半导体。”
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共 10 条
Energy transfer and optical functionalities in nanoparticle heterostructures
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批准号:21340084
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$12.23万
-
财政年份:2009
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负责人:KANEMITSU Yoshihiko
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依托单位:
Study on high-density excited states and optical processes in semiconductor nanostructures by spatial-and time-resolved spectroscopy
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批准号:18340089
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$10.33万
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财政年份:2006
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负责人:KANEMITSU Yoshihiko
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依托单位:
Fabrication of semiconductor nanoparticles doped with active impurities and optical properties of single impurity-doped semiconductor nanoparticles
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批准号:14340093
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.09万
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财政年份:2002
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负责人:KANEMITSU Yoshihiko
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依托单位:
Fabrication and Optical Characterization of Assembled Semiconductor Nanocrystals
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批准号:11440095
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$3.78万
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财政年份:1999
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负责人:KANEMITSU Yoshihiko
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依托单位:
Development of Small-Sized Scanning Tunneling Microscope with Auger-Electron Analyzer
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批准号:11792001
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项目类别:Grant-in-Aid for University and Society Collaboration
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资助金额:$4.67万
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财政年份:1999
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负责人:KANEMITSU Yoshihiko
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依托单位:
Development of Light Emitting Diodes using Silicon Nanocrystals
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批准号:06555002
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项目类别:Grant-in-Aid for Developmental Scientific Research (B)
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资助金额:$4.1万
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财政年份:1994
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负责人:KANEMITSU Yoshihiko
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依托单位:
海外基金