Development of Light Emitting Diodes using Silicon Nanocrystals
使用硅纳米晶体开发发光二极管
基本信息
- 批准号:06555002
- 负责人:
- 金额:$ 4.1万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Developmental Scientific Research (B)
- 财政年份:1994
- 资助国家:日本
- 起止时间:1994 至 1995
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
There is currently intense interest in optical and electronic properties silicon nanocrystals. In particular, strong visible luminescence from silicon nanocrystals has attracted much attention from the viewpoints of both fundamental physics and the potential application to optical devices. We fabricated light-emitting diodes (LEDs) using silicon and silicon carbide nanocrystals. Quantum efficiencies of red LEDs are 0.1%. The efficiencies of green and blue LEDs are very low. The liquid/porous silicon junctions have achieved the low threshold voltage for light emission and high quantum efficiencies. It is necessary to develop good contacts between the injection materials and silicon nanocrystals with large surfaces in order to obtain high efficiency in solid state devices. Moreover, we discovered new nonlinear optical phenomena in silicon nanocrystals, such as optical bistability and optical limiting. Optical nonlinear devices fabricated by silicon nanocrystals having controllable optical properties seem to be the key elements of all-optical logic and computing systems.
目前,人们对硅纳米晶体的光学和电学性质有着浓厚的兴趣。特别是硅纳米晶体的强可见光发射,无论从基础物理学的角度还是从在光学器件上的潜在应用的角度,都引起了人们的广泛关注。我们使用硅和碳化硅纳米晶体制造发光二极管(LED)。红色LED的量子效率为0.1%。绿色和蓝色LED的效率非常低。液态/多孔硅结具有低的发光阈值电压和高的量子效率。为了在固态器件中获得高效率,有必要在注入材料和具有大表面的硅纳米晶体之间形成良好的接触。此外,我们还在硅纳米晶体中发现了新的非线性光学现象,如光学双稳和光限幅。利用具有可控光学特性的硅纳米晶制备的光学非线性器件是全光逻辑和计算系统的关键元件。
项目成果
期刊论文数量(31)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Y.Kanemitsu: "Visible Photoluminescence from Silicon-Based Polymers" Physical Review B. 51. 13103-13110 (1995)
Y.Kanemitsu:“硅基聚合物的可见光致发光”物理评论 B. 51. 13103-13110 (1995)
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Y.Kanemitsu: "Luminescence Properties of Nanometer-Sized Si Crystallites" Physical Review B. 49. 16845-16848 (1994)
Y.Kanemitsu:“纳米尺寸硅微晶的发光特性”物理评论 B.49.16845-16848 (1994)
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
H.Mimura: "Light-Emitting Diodes using Porous Silicon" Journal of the Physical Society of Japan. 63. 203-210 (1994)
H.Mimura:“使用多孔硅的发光二极管”日本物理学会杂志。
- DOI:
- 发表时间:
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- 影响因子:0
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三村秀典: "ポーラスシリコンの電界発光とその応用" 固体物理. 30. 970-977 (1995)
Hidenori Mimura:“多孔硅的电致发光及其应用”固体物理 30. 970-977 (1995)。
- DOI:
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- 影响因子:0
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Y.Kanemits & T.Ogawa: "Optical Properties of Low-Dimensional Materials" World Scientific(印刷中), (1996)
Y.Kanemits 和 T.Okawa:“低维材料的光学特性”World Scientific(正在出版),(1996 年)
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- 影响因子:0
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KANEMITSU Yoshihiko其他文献
KANEMITSU Yoshihiko的其他文献
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{{ truncateString('KANEMITSU Yoshihiko', 18)}}的其他基金
Energy transfer and optical functionalities in nanoparticle heterostructures
纳米颗粒异质结构中的能量转移和光学功能
- 批准号:
21340084 - 财政年份:2009
- 资助金额:
$ 4.1万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Study on high-density excited states and optical processes in semiconductor nanostructures by spatial-and time-resolved spectroscopy
通过空间和时间分辨光谱研究半导体纳米结构中的高密度激发态和光学过程
- 批准号:
18340089 - 财政年份:2006
- 资助金额:
$ 4.1万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Fabrication of semiconductor nanoparticles doped with active impurities and optical properties of single impurity-doped semiconductor nanoparticles
活性杂质掺杂半导体纳米颗粒的制备及单一杂质掺杂半导体纳米颗粒的光学性能
- 批准号:
14340093 - 财政年份:2002
- 资助金额:
$ 4.1万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Fabrication and Optical Characterization of Assembled Semiconductor Nanocrystals
组装半导体纳米晶体的制造和光学表征
- 批准号:
11440095 - 财政年份:1999
- 资助金额:
$ 4.1万 - 项目类别:
Grant-in-Aid for Scientific Research (B).
Development of Small-Sized Scanning Tunneling Microscope with Auger-Electron Analyzer
俄歇电子分析仪小型扫描隧道显微镜的研制
- 批准号:
11792001 - 财政年份:1999
- 资助金额:
$ 4.1万 - 项目类别:
Grant-in-Aid for University and Society Collaboration
Study of Picosecond Laser-Induced Shock Waves and Phase Transformation in Solids
皮秒激光诱导冲击波和固体相变的研究
- 批准号:
01550005 - 财政年份:1989
- 资助金额:
$ 4.1万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
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