Study of Hetero-junction of Lamellar Semiconductor/GaAs

层状半导体/砷化镓异质结的研究

• 批准号: 01550021
• 负责人: OKUMURA Tsugunori
• 金额: $ 1.22万
• 依托单位: Tokyo Metropolitan University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1989
• 资助国家: 日本
• 起止时间: 1989 至 1990
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-01550021/
• 关键词: Lamellar Semiconductor; Gallium Selenide; Gallium Telluride; Hetero-junction; ヘテロ接合; 異方性; エピタキシ-

Hetero-junction of lamellar semiconductor/GaAs was fabricated with vacuum deposition of GaTe or GaSe on GaAs wafers and its properties were evaluated from I-V and C-V measurements.(1) Evaluation of GaTe/GaAs hetero-junction from resistivity of GaTe :The resistivities of GaTe thin film (substrate : GaAs (111), and GaAs (100) -without dopant, and glass plate) were measured using van der Pauw's method and four-point probe method at room temperature. The resistivity decreased with crystallization of the film at substrate temperatures above 200 ^ﾟC. The film grown as lamella showed 20 ohm・cm, which was the same value as for the cleavage plane of GaTe single crystals. It is suggested that epitaxial growth takes place on GaAs (111) A surface, which consists only of Ga atom, due to chemical affinity of Te of GaTe to Ga in GaAs.(2) Fabrication and evaluation of hetero-junction of GaSe/GaAs :Formation of GaSe film was tried on GaAs (111) A and GaAs (100) with vacuum sublimation. Here, GaAs was used as substrate after passivation with ammonium sulfide. Lamellar GaSe film was obtained at substrate temperatures above 250^ﾟC. I-V and C-V measurements showed that the GaSe film behaved as p-type. The carrier densities were calculated to be 10^<17> cm^<-3>.

用真空淀积法在GaAs衬底上制备了层状半导体/GaAs异质结，并对其I-V和C-V特性进行了测试。(1)从GaTe的电阻率评价GaTe/GaAs异质结：在室温下，使用货车德堡法和四点探针法测量GaTe薄膜（衬底：GaAs（111）和GaAs（100）-无掺杂剂，以及玻璃板）的电阻率。在衬底温度高于200 ° C时，电阻率随着薄膜的结晶而降低。以层状生长的薄膜显示20 ohm·cm，这与GaTe单晶的解理面的值相同。结果表明，由于GaTe中的Te与GaAs中的Ga的化学亲合作用，在仅由Ga原子组成的GaAs（111）A表面上发生了外延生长。(2)GaSe/GaAs异质结的制备与评价：用真空升华法在GaAs（111）A和GaAs（100）A上制备了GaSe薄膜。在这里，GaAs被用作基板后，用硫化铵钝化。在衬底温度高于250 ° C时，获得了层状GaSe薄膜。I-V和C-V测试表明GaSe薄膜为p型。载流子密度经计算为10 μ cm-3。<17><-3>

项目成果

J. Robertson: ""Electronic Structure of GaSe, GaS, InSe, and GaTe"" J. Phys. C : Solid State Phys.Vol. 12. 4777 (1979)

J. Robertson：“GaSe、GaS、InSe 和 GaTe 的电子结构”J. Phys。

Michiko SHIMURA,Takayuki YABE,Tsugunori OKUMURA: "TwoーDemensional Crystal Growth of GaTe Thin Films by Vacuum Deposition" The Momoirs Fac.of Tech.Tokyo Metropol.Univ.No.40,. (1990)

Michiko SHIMURA、Takayuki YABE、Tsugunori OKUMURA​​：“通过真空沉积进行栅极薄膜的二维晶体生长”The Momoirs Fac.of Tech.Tokyo Metropol.Univ.No.40，（1990）

A. Gouskov, J. Camassel, and L. Gouskov: ""Growth and characterization of III-VI Layered crystals Like GaSe, GaTe, InSe, GaSe_<1-x>Te_x and Ga_xIn_<1-x>Se"" Prog. Crystal growth and Charact.Vol. 5. 323 (1982)

A. Gouskov、J. Camassel 和 L. Gouskov：“GaSe、GaTe、InSe、GaSe_<1-x>Te_x 和 Ga_xIn_<1-x>Se 等 III-VI 层状晶体的生长和表征”Prog。

Michiko SHIMURA, Takayuki YABE, Tsugunori OKUMURA: "TwoーDemensional Crystal Growth of GaTs Thin Films by Vacuum Deposition" The Momoirs of Fac.of Tech.Tokyo Metropol.Univ.No.40,. 91-98 (1990)

Michiko SHIMURA、Takayuki YABE、Tsugunori OKUMURA​​：“通过真空沉积进行 GaTs 薄膜的二维晶体生长”Fac.of Tech.Tokyo Metropol.Univ.No.40 的回忆录 (1990)。

S. Kurtin, and C. A. Meas: ""Surface Barriers on Layer Semiconductors : GaS, GaSe, GaTe"" J. Phys. Chem. Solids. Vol. 30. 2007 (1969)

S. Kurtin 和 C. A. Meas：“层状半导体上的表面势垒：GaS、GaSe、GaTe”J. Phys。