Study of Hetero-junction of Lamellar Semiconductor/GaAs

Lamellar半导体/GaAs的异质结被制造成真空沉积的GaTe或GaSe，并从I-V和C-V测量中评估了其性能。（1）从GaTe的抵抗力到GaTe的抵抗力：GaTe薄膜的抵抗力（基底： GaAs （111）和GaAs （100）-不含掺杂剂和玻璃板）对Van der Pauw的方法和房间温度的四点探测器方法进行了测量。在200以上的基础温度下，由于电影的低温而减弱了抵抗力。这部电影长得像拉梅拉放映的20欧姆·厘米，但对于GaTe单水晶的清晰平面来说，它的价值是相同的。有人建议说，基本增长需要在GaAs （111）表面上占有一席之地，这是一个只有Ga原子的因素，是GaAs中Te of GaTe to Ga的化学关联性。（2）GaSe/GaAs异构体的制造和评估：已经尝试了GaAs （111） A和GaAs （100）与真空抑制的气相薄膜的形成。在这里， GaAs被用作被氨硫醚吸收后的基底。Lamellar GaSe电影在250以上的基础温度上被发现。展示了以p型为特征的GaSe薄膜的I-V和C-V测量。您的位置：知道173&gt;&gt; to be 10^<17>cm^\-3\。

Hetero-junction of lamellar semiconductor/GaAs was fabricated with vacuum deposition of GaTe or GaSe on GaAs wafers and its properties were evaluated from I-V and C-V measurements.(1) Evaluation of GaTe/GaAs hetero-junction from resistivity of GaTe :The resistivities of GaTe thin film (substrate : GaAs (111), and GaAs (100) -without dopant, and glass plate) were measured using van der Pauw's method and four-point probe method at room temperature. The resistivity decreased with crystallization of the film at substrate temperatures above 200 ^ﾟC. The film grown as lamella showed 20 ohm・cm, which was the same value as for the cleavage plane of GaTe single crystals. It is suggested that epitaxial growth takes place on GaAs (111) A surface, which consists only of Ga atom, due to chemical affinity of Te of GaTe to Ga in GaAs.(2) Fabrication and evaluation of hetero-junction of GaSe/GaAs :Formation of GaSe film was tried on GaAs (111) A and GaAs (100) with vacuum sublimation. Here, GaAs was used as substrate after passivation with ammonium sulfide. Lamellar GaSe film was obtained at substrate temperatures above 250^ﾟC. I-V and C-V measurements showed that the GaSe film behaved as p-type. The carrier densities were calculated to be 10^<17> cm^<-3>.