Formation, migration and annihilation of plasma-induced defects in gallium nitride (GaN)

在GaN相关器件的等离子体处理过程中，掺杂剂失活是一个关键问题。在这项研究中，我们专注于等离子体发射的效果，以及负责掺杂剂失活的缺陷的电荷状态。电子-空穴对的产生对上述间隙光（UV光）的吸收是必不可少的迁移，但不是源缺陷的形成。相当低的温度（低于200 ℃）退火恢复n-GaN中失活的Si施主，而恢复速率显著取决于缺陷的电荷状态（失活施主周围的电子密度）。

The dopant deactivation is a critical issue during plasma processing for GaN-related devices. In this study, we have focused on the effect of the plasma emission as well as the charge-state of the defects responsible for the dopant deactivation. Electron-hole pair generation upon the above-gap light (UV light) absorption is essential to the migration, but not to the formation of the source defects. Rather low-temperature (below 200 C) annealing restores the deactivated Si-donors in n-GaN, while the restoring rate depends significantly on the charge state of the defects (the electron density around the deactivated donors).